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The physics of a junction composed of a normal metal, quantum dot and 2D topological insulator (in a quantum spin Hall state) is elucidated. It maifests a subtle combination of Kondo correlations and quantum spin Hall edge states moving on…

强关联电子 · 物理学 2013-05-30 Igor Kuzmenko , Anatoly Golub , Yshai Avishai

Non-equilibrium spin transport through an interacting quantum dot is analyzed. The coherent spin oscillations in the dot provide a generating source for spin current. In the interacting regime, the Kondo effect is influenced in a…

介观与纳米尺度物理 · 物理学 2007-05-23 Ping Zhang , Qi-Kun Xue , X. C. Xie

We model a quantum dot-array (with one electron per dot) comprising of two (or more than two) coupled dots by an extended Hubbard Hamiltonian to investigate the role played by the inter-dot tunneling amplitude td, together with intra-dot…

强关联电子 · 物理学 2009-11-13 Partha Goswami , Avinashi Kapoor

Kondo effect in the vicinity of a singlet-triplet transition in a vertical quantum dot is considered. This system is shown to map onto a special version of the two-impurity Kondo model. At any value of the control parameter, the system has…

介观与纳米尺度物理 · 物理学 2007-05-23 M. Pustilnik , L. I. Glazman

We have studied low-temperature single electron transport through ultra-small Si quantum dots. We find that at low temperatures Coulomb blockade is partially lifted at certain gate voltages. Furthermore, we observed an enhancement of…

介观与纳米尺度物理 · 物理学 2007-05-23 L. P. Rokhinson , L. J. Guo , S. Y. Chou , D. C. Tsui

We study the three-orbital Kondo effect in quantum dot (QD) systems by applying the non-crossing approximation to the three-orbital Anderson impurity model. By investigating the tunneling conductance through a QD, we show that the…

介观与纳米尺度物理 · 物理学 2007-05-23 Tomoko Kita , Rui Sakano , Takuma Ohashi , Sei-ichiro Suga

We observe a strong Kondo effect in a semiconductor quantum dot when a small magnetic field is applied. The Coulomb blockade for electron tunneling is overcome completely by the Kondo effect and the conductance reaches the unitary-limit…

介观与纳米尺度物理 · 物理学 2009-10-31 W. G. van der Wiel , S. De Franceschi , T. Fujisawa , J. M. Elzerman , S. Tarucha , L. P. Kouwenhoven

The low temperature electrical conductance through correlated quantum dots provides a sensitive probe of the physics (e.g., of Fermi-liquid vs non-Fermi-liquid behavior) of such systems. Here, we investigate the role of level asymmetry…

强关联电子 · 物理学 2013-04-29 L. Merker , S. Kirchner , E. Muñoz , T. A. Costi

We review mechanisms of low-temperature electronic transport through a quantum dot weakly coupled to two conducting leads. Transport in this case is dominated by electron-electron interaction. At temperatures moderately lower than the…

介观与纳米尺度物理 · 物理学 2007-05-23 M. Pustilnik , L. I. Glazman

We investigate theoretically and experimentally the singlet-triplet Kondo effect induced by a magnetic field in a molecular junction. Temperature dependent conductance, $G(T)$, is calculated by the numerical renormalization group, showing a…

介观与纳米尺度物理 · 物理学 2020-07-22 Peter Zalom , Joeri de Bruijckere , Rocco Gaudenzi , Herre S. J. van der Zant , Tomáš Novotný , Richard Korytár

Low temperature zero-bias conductance through two side-coupled quantum dots is investigated using Wilson's numerical renormalization group technique. A low-temperature phase diagram is computed. Near the particle-hole symmetric point…

介观与纳米尺度物理 · 物理学 2015-06-25 J. Bonca , R. Zitko

The tunneling conductance is calculated as a function of the gate voltage in wide temperature range for the single quantum dot systems with Coulomb interaction. We assume that two orbitals are active for the tunneling process. We show that…

强关联电子 · 物理学 2009-10-31 Wataru Izumida , Osamu Sakai , Yukihiro Shimizu

We study the Kondo effect and related transport properties in orbitally degenerate vertical quantum dot systems with plural electrons. Applying the non-crossing approximation to the three-orbital Anderson impurity model with the finite…

强关联电子 · 物理学 2008-09-10 Tomoko Kita , Rui Sakano , Takuma Ohashi , Sei-ichiro Suga

We report transport measurements of gate-tunable Andreev bound states in a carbon nanotube quantum dot coupled to two superconducting leads. In particular, we observe clear features of two types of Kondo ridges, which can be understood in…

介观与纳米尺度物理 · 物理学 2013-02-26 Bum-Kyu Kim , Ye-Hwan Ahn , Ju-Jin Kim , Mahn-Soo Choi , Myung-Ho Bae , Kicheon Kang , Jong Soo Lim , Rosa Lopez , Nam Kim

We present a universal set of quantum gate operations based on exchange-only spin qubits in a double quantum dot, where each qubit is obtained by three electrons in the (2,1) filling. Gate operations are addressed by modulating…

量子物理 · 物理学 2018-09-05 Marco De Michielis , Elena Ferraro , Marco Fanciulli , Enrico Prati

The nonlinear conductance of semiconductor heterostructures and single molecule devices exhibiting Kondo physics has recently attracted attention. We address the observed sample dependence of the measured steady state transport coefficients…

介观与纳米尺度物理 · 物理学 2013-01-14 Enrique Muñoz , C. J. Bolech , Stefan Kirchner

A numerical renormalization-group survey of the zero-bias electrical conductance through a quantum dot embedded in the conduction path of a nanodevice is reported. The results are examined in the light of a recently derived linear mapping…

介观与纳米尺度物理 · 物理学 2010-01-13 Makoto Yoshida , Antonio C. Seridonio , Luiz N. Oliveira

The linear transport properties of a model molecular transistor with electron-electron and electron-phonon interactions were investigated analytically and numerically. The model takes into account phonon modulation of the electronic energy…

介观与纳米尺度物理 · 物理学 2007-05-23 P. S. Cornaglia , D. R. Grempel , H. Ness

We study the Kondo effect in side-coupled double quantum dots with particular focus on the crossover between two distinct singlet ground states, using the numerical renormalization group. The crossover occurs as the quantized energy level…

介观与纳米尺度物理 · 物理学 2012-04-18 Yoichi Tanaka , Norio Kawakami , Akira Oguri

In a tunneling experiment across a quantum dot it is possible to change the coupling between the dot and the contacts at will, by properly tuning the trasparency of the barriers and the temperature. Gate voltages allow for changes of the…

强关联电子 · 物理学 2009-11-10 Domenico Giuliano , Adele Naddeo , Arturo Tagliacozzo