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We study the formation of ferromagnetic and magnetic polaron states in weakly doped heterobilayer transition metal dichalcogenides in the ``heavy fermion'' limit in which one layer hosts a dense set of local moments and the other hosts a…

强关联电子 · 物理学 2024-11-12 Daniele Guerci , J. H. Pixley , Andrew J. Millis

Moir\'e heterostructures of transition metal dichalcogenides exhibit Mott-insulating behaviour both at half-filling as well as at fractional fillings, where electronic degrees of freedom form self-organized Wigner crystal states. An open…

强关联电子 · 物理学 2024-01-31 Urban F. P. Seifert , Leon Balents

Doped divalent hexaborides such as $Sr_{1-x}La_xB_6$ exhibit high \tc ferromagnetism. We isolate a degenerate pair of $2p$-orbitals of boron with two valence electrons, invoke electron correlation and Hund coupling, to suggest that the…

强关联电子 · 物理学 2009-11-07 G. Baskaran

We introduce a variational state for one-dimensional two-orbital Hubbard models that intuitively explains the recent computational discovery of pairing in these systems when hole doped. Our Ansatz is an optimized linear superposition of…

强关联电子 · 物理学 2020-05-26 Niravkumar D. Patel , Nitin Kaushal , Alberto Nocera , Gonzalo Alvarez , Elbio Dagotto

Recent experiments on the amorphous magnetic semiconductor Gd_x Si_{1-x}, Phys. Rev. Lett. 77, 4652 (1996), ibid 83, 2266 (1999), ibid 84, 5411 (2000), ibid 85, 848 (2000), have revealed an insulator-metal transition (i-m-t), as a function…

强关联电子 · 物理学 2009-11-07 Sanjeev Kumar , Pinaki Majumdar

We report thermodynamic magnetization measurements of two-dimensional electrons in several high mobility Si metal-oxide-semiconductor field-effect transistors. We provide evidence for an easily polarizable electron state in a wide density…

强关联电子 · 物理学 2012-11-29 N. Teneh , A. Yu. Kuntsevich , V. M. Pudalov , M. Reznikov

We study kinetic magnetism for the Fermi-Hubbard models in triangular type lattices, including a zigzag ladder, four- and six-legged triangular cylinders and a full two-dimensional triangular lattice. We focus on the regime of strong…

We compute the valley/magnetic phase diagram of mono layers of transition metal dichalcogenides in the hole doped region where spin-orbit effects are particularly relevant. Taking into account the moderate to high local electron-electron…

介观与纳米尺度物理 · 物理学 2018-10-24 João E. H. Braz , B. Amorim , Eduardo V. Castro

Spin excitations are explored in the electron-doped spin-orbit Mott insulator (Sr$_{1-x}$La$_{x}$)$_3$Ir$_2$O$_7$. As this bilayer square lattice system is doped into the metallic regime, long-range antiferromagnetism vanishes, yet a…

We investigate the anomalous metal arising by hole doping the Mott insulating state of the periodic Anderson model. Using Dynamical Mean-Field Theory we show that, as opposed to the electron-doped case, in the hole-doped regime the…

强关联电子 · 物理学 2015-06-03 A. Amaricci , L. de Medici , G. Sordi , M. J. Rozenberg , M. Capone

The magnetic behavior of insulating doped diluted magnetic semiconductors (DMS) is characterized by the interaction of large collective spins known as bound magnetic polarons. Experimental measurements of the susceptibility of these…

材料科学 · 物理学 2009-11-07 Adam C. Durst , R. N. Bhatt , P. A. Wolff

We studied the Co valences and spin states in electron-doped LaCo$_{1-y}$Te$_{y}$O$_3$ by measuring x-ray absorption spectra and electron spin resonance. The low-temperature insulating state involves the low-spin Co$^{3+}$ ($S=0$) and the…

Charge transport in the hole-doped quasi-1D model system Y$_{2-x}$Ca$_x$BaNiO$_5$ (x $ leq$ 0.15) is investigated in the 50-300 K temperature range. The resistivity temperature dependence is characterized by a constant activation energy…

The evolution of electronic (spin and charge) excitations upon carrier doping is an extremely important issue in superconducting layered cuprates and the knowledge of its asymmetry between electron- and hole-dopings is still fragmentary.…

We investigate the entanglement properties of resonating valence bond states on a two dimensional lattice in the presence of dopants that remove electrons from the lattice creating "holes". The movement of the holes generated by the Hubbard…

量子物理 · 物理学 2009-11-13 Ravishankar Ramanathan , Dagomir Kaszlikowski , Marcin Wiesniak , Vlatko Vedral

We study an effective one-dimensional (1D) orbital t-J model derived for strongly correlated e_g electrons in doped manganites. The ferromagnetic spin order at half filling is supported by orbital superexchange prop. to J which stabilizes…

强关联电子 · 物理学 2009-11-11 M. Daghofer , A. M. Oles , W. von der Linden

We present a theoretical model of composite excitonic states in doped semiconductors. Many-body interactions between a photoexcited electron-hole pair and the electron gas are integrated into a computationally tractable few-body problem,…

材料科学 · 物理学 2022-08-15 Dinh Van Tuan , Hanan Dery

We investigate the strong correlation effect in the spinless electron-hole two-band Hubbard model using the dynamical mean-field theory. At half filling, both the renormalization factor $Z$ and the number of conduction electrons (valence…

强关联电子 · 物理学 2026-05-26 Masashi Akiyama , Yusuke Inokuma , Yoshiaki Ono

The electron's kinetic energy plays a pivotal role in magnetism. While virtual electron hopping promotes antiferromagnetism in an insulator, the real process usually favors ferromagnetism. But in kinetically frustrated systems, such as hole…

强关联电子 · 物理学 2023-07-25 Zui Tao , Wenjin Zhao , Bowen Shen , Patrick Knüppel , Kenji Watanabe , Takashi Taniguchi , Jie Shan , Kin Fai Mak

We propose a new class of ground states for doped Mott insulators in the electron second-quantization representation. They are obtained from a bosonic resonating valence bond (RVB) theory of the t-J model. At half filling, the ground state…

强关联电子 · 物理学 2007-05-23 Z. Y. Weng , Y. Zhou , V. N. Muthukumar
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