相关论文: Common-Path Interference and Zener Tunneling in Bi…

We show that the probability of electric field induced interband tunneling in solid state systems is generically a non-monotonic (oscillatory) function of the applied field. This unexpected behavior can be understood as arising due to a…

We demonstrate a tunneling and rectification behavior in bilayer graphene. A stepped dielectric top gate creates a spatially modulated electric field, which opens the band gap in the graphene and produces an insulating region at the p-n…

Graphene p-n junctions provide an ideal platform for investigating novel behavior at the boundary between electronics and optics that arise from massless Dirac fermions, such as whispering gallery modes and Veselago lensing. Bilayer…

The observation of quantum conductance oscillations in mesoscopic systems has traditionally required the confinement of the carriers to a phase space of reduced dimensionality. While electron optics such as lensing and focusing have been…

We investigate the quantum tunneling of electrons in an AA-stacked bilayer graphene (BLG) $n$-$p$ junction and $n$-$p$-$n$ junction. We show that Klein tunneling of an electron can occur in this system. The quasiparticles are not only…

We demonstrate the presence of quantum interference effects in van der Waals heterostructures subject to in-plane electric fields. The in-plane field $F$ accelerates carriers through a hybridized band edge, and interlayer Zener tunneling…

We report the experimental observation of Fabry-P\'erot (FP) interference in the conductance of a gate-defined cavity in a dual-gated bilayer graphene (BLG) device. The high quality of the BLG flake, combined with the device's electrical…

A theory is developed for interband tunneling in semiconducting carbon nanotube and graphene nanoribbon p-n junction diodes. Characteristic length and energy scales that dictate the tunneling probabilities and currents are evaluated. By…

Unipolar transport is demonstrated in a bilayer graphene with a series of p-n junctions and is controlled by electrostatic biasing by a comb-shaped top gate. The OFF state is induced by multiple barriers in the p-n junctions, where the band…

A quantum interference effect is discussed for subgap tunneling over a distance comparable to the coherence length, which is a consequence of ``advanced-advanced'' and ``retarded-retarded'' transmission modes [Altland and Zirnbauer, Phys.…

Tunneling conductance between two bilayer graphene (BLG) sheets separated by 2 nm-thick insulating barrier was measured in two devices with the twist angles between BLGs less than 1{\deg}. At small bias voltages, the tunneling occurs with…

The conductance through single-layer graphene (SLG) and AA/AB-stacked bilayer graphene (BLG) junctions is obtained by taking into account band gap and bias voltage terms. First, we consider gapped SLG, while in between, they are connected…

Graphene matter in a strong magnetic field, realizing one-dimensional quantum Hall channels, provides a unique platform for studying electron interference. Here, using the Landauer-B\"uttiker formalism along with the tight-binding model, we…

Trilayer graphene {(TLG)} consists of three layers of graphene arranged in a particular stacking order. In the case of ABC-ABA-ABC stacking, the layers are arranged in an A-B-C sequence, followed by an A-B-A sequence, and again an A-B-C…

We observe conductivity oscillations with aperiodic spacing to only one side of the tunneling current in a dual-gated graphene field effect transistor with an n-p-n type potential barrier. The spacing and width of these oscillatoins were…

The electronic tunneling properties of the two stable forms of trilayer graphene (TLG), rhombohedral ABC and Bernal ABA, are examined for pn and pnp junctions as realized by using a single gate (SG) or a double gate (DG). For the…

We investigate quantum tunneling of charge carriers through a periodic superlattice in twisted bilayer graphene (TBG) with rectangular potential barriers, including the presence of a defect, using a low-energy continuum model. Transmission…

Simulating quantum transport through mesoscopic, ring-shaped graphene structures, we address various quantum coherence and interference phenomena. First, a perpendicular magnetic field, penetrating the graphene ring, gives rise to…

We theoretically investigate the electron tunneling in dual-gated bilayer graphene-based $n/p$ junctions. It is shown that a band gap is introduced by tuning the gate voltage, which modifies the pseudospin polarization and breaks anti-Klein…

Electronic transport in narrow gap semiconductors is characterized by spontaneous vertical transitions between carriers in the valence and conduction bands, a phenomenon also known as Zener tunneling. However, this effect is not captured by…