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The interaction between a graphene layer and a hexagonal Boron Nitride (hBN) substrate induces lateral displacements and strains in the graphene layer. The displacements lead to the appearance of commensurate regions and the existence of an…

介观与纳米尺度物理 · 物理学 2014-09-05 Pablo San-Jose , Ángel Gutiérrez , Mauricio Sturla , Francisco Guinea

We investigate the dependence of the optical conductivity of bilayer graphene (BLG) on the intra- and inter-layer interactions using the most complete model to date. We show that the next nearest-neighbor intralayer coupling introduces new…

材料科学 · 物理学 2015-05-13 A. R. Wright , Feng Liu , C. Zhang

Ordinary doping by electrons (holes) generally means that the Fermi level shifts towards the conduction band (valence band) and that the conductivity of free carriers increases. Recently, however, some peculiar doping characteristics were…

材料科学 · 物理学 2019-03-27 Qihang Liu , Gustavo M. Dalpian , Alex Zunger

We have investigated the Coulomb screening properties and plasmon spectrum in a bilayer graphene under a perpendicular electric bias. The bias voltage applied between the two graphene layers opens a gap in the single particle energy…

介观与纳米尺度物理 · 物理学 2010-02-04 Xue-Feng Wang , Tapash Chakraborty

We calculate the dynamical conductivity of AA-stacked bilayer graphene as a function of frequency and in the presence of a finite chemical potential due to charging. Unlike the monolayer, we find a Drude absorption at charge neutrality in…

介观与纳米尺度物理 · 物理学 2013-03-01 Calvin J. Tabert , Elisabeth J. Nicol

A specific structure of doped graphene with substituted silicon impurity is introduced and ab. initio density-functional approach is applied for energy band structure calculation of proposed structure. Using the band structure calculation…

介观与纳米尺度物理 · 物理学 2011-03-01 Mohammad S. Sharif Azadeh , Alireza Kokabi , Mehdi Hosseini , Mehdi Fardmanesh

Many are the ways of engineering the band gap of nanoribbons including application of stress, electric field and functionalization of the edges. In this article, we investigate separately the effects of these methods on armchair graphene…

介观与纳米尺度物理 · 物理学 2024-03-14 Elisa Serrano Richaud , Sylvain Latil , Hakim Amara , Lorenzo Sponza

We use a tight binding approach and density functional theory calculations to study the band structure of graphene/hexagonal boron nitride bilayer system in the most stable configuration. We show that an electric field applied in the…

材料科学 · 物理学 2010-11-10 J. Slawinska , I. Zasada , Z. Klusek

Intrinsic bilayer graphene is a gapless semimetal. Under the application of a bias field it becomes a semiconductor with a direct band gap that is proportional to the applied field. Under a layer-asymmetric strain (where the upper layer…

介观与纳米尺度物理 · 物理学 2014-12-04 J. A. Crosse

The doping of lighter non-metals like boron and nitrogen into graphene represents a promising advancement in the field of nano-electronic devices, particularly in the development of field-effect transistors (FETs). These doped…

材料科学 · 物理学 2023-08-16 Vivek Kumar Yadav

The effects of doping on the spectral properties of low doped systems are investigated by means of Coherent Potential Approximation to describe the distributed disorder induced by the impurities and Phonon-Phonon Non-Crossing Approximation…

材料科学 · 物理学 2018-06-18 Domenico Di Sante , Sergio Ciuchi

Black phosphorus (BP) is receiving significant attention because of its direct 0.4-1.5 eV layer-dependent band gap and high mobility. Because BP devices rely on exfoliation from bulk crystals, there is a need to understand native impurities…

介观与纳米尺度物理 · 物理学 2018-09-11 J. V. Riffle , C. Flynn , B. St. Laurent , C. A. Ayotte , C. A. Caputo , S. M. Hollen

We study the effect of magnetism and perpendicular external electric field strengths on the energy gap of length confined bilayer graphene nanoribbons (or nanoflakes) as a function of ribbon width and length using a \textit{first…

材料科学 · 物理学 2010-01-28 Bhagawan Sahu , Hongki Min , Sanjay K. Banerjee

Restructuring of electronic spectrum in a buckled silicene monolayer under some applied voltage between its two sublattices and in presence of certain impurity atoms is considered. A special attention is given to formation of localized…

无序系统与神经网络 · 物理学 2016-01-20 Yuriy G. Pogorelov , Vadim M. Loktev

We discuss the effect of disorder on the band gap measured in bilayer graphene in optical and transport experiments. By calculating the optical conductivity and density of states using a microscopic model in the presence of disorder, we…

介观与纳米尺度物理 · 物理学 2011-07-26 Hongki Min , D. S. L. Abergel , E. H. Hwang , S. Das Sarma

Using density-functional calculations, we show that electron or hole doped graphene can strongly change the mobility of adsorbed atoms H and O. Interestingly, charge doping affects the diffusion of H and O in the opposite way, namely,…

计算物理 · 物理学 2016-08-04 Manh-Thuong Nguyen , Pham Nam Phong

Nitrogen doping in graphene has important implications in graphene-based devices and catalysts. We have performed the density functional theory calculations to study the electronic structures of N-doped graphene with vacancies and…

We study, within the tight-binding approximation, the electronic properties of a graphene bilayer in the presence of an external electric field applied perpendicular to the system -- \emph{biased bilayer}. The effect of the perpendicular…

We investigate the chemisorptions of oxygen molecules on bilayer graphene (BLG) and its electrically modified charge-doping effect using conductivity measurement of the field effect transistor channeled with BLG. We demonstrate that the…

介观与纳米尺度物理 · 物理学 2011-08-10 Yoshiaki Sato , Kazuyuki Takai , Toshiaki Enoki

The ultimate surface exposure provided by graphene monolayer makes it the ideal sensor platform but also exposes its intrinsic properties to any environmental perturbations. In this work, we demonstrate that the charge carrier density of…

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