相关论文: Contact effects on transport in magnetite, an arch…
Contact resistances often contribute significantly to the overall device resistance in organic field-effect transistors (OFETs). Understanding charge injection at the metal-organic interface is critical to optimizing OFET device…
Contact resistances between organic semiconductors and metal electrodes have been shown to play a dominant role in electronic charge injection properties of organic field-effect transistors. These effects are more prevalent in short channel…
Contact effects in devices incorporating strongly-correlated electronic materials are comparatively unexplored. We have investigated the electrically-driven phase transition in magnetite (100) thin films by four-terminal methods. In the…
Contact resistances between organic semiconductors and metals can dominate the transport properties of electronic devices incorporating such materials. We report measurements of the parasitic contact resistance and the true channel…
Edge contact geometries are thought to yield ultralow contact resistances in most non-ferromagnetic metal-graphene interfaces owing to their large metal-graphene coupling strengths. Here, we examine the contact resistance of edge- versus…
We report on a systematic study of a number of structurally identical but chemically distinct transition metal oxides in order to determine how the material-specific properties such as the composition and the strain affect the properties at…
We compare the temperature dependence of resistivity \rho(T) of Si MOSFETs with the recent theory by Zala et al. This comparison does not involve any fitting parameters: the effective mass m* and g*-factor for mobile electrons have been…
In order to determine the key parameters that control the resistive switching mechanism in metal-complex oxides interfaces, we have studied the electrical properties of metal / YBa2Cu3O7-d (YBCO) interfaces using metals with different…
In this paper we report an exhaustive experimental work on magnetoresistance effects found in a system in which a large number of nanocontacts are produced between oxidized Fe fine particles. We have obtained the following performances: i)…
Contact Resistance (RC) is a major limiting factor in the performance of graphene devices. RC is sensitive to the quality of the interface and the composition of the contact, which are affected by the graphene transfer process and contact…
We present ab initio calculations of transport properties of atomic-sized aluminum contacts in the presence of oxygen. The experimental situation is modeled by considering a single oxygen atom (O) or one of the molecules O2 and O3 bridging…
Magnetism in transition metal compounds is usually considered starting from a description of isolated ions, as exact as possible, and treating their (exchange) interaction at a later stage. We show that this standard approach may break down…
This study illustrates the nature of electronic transport and its transition from one mechanism to another between a metal electrode and MoS2 channel interface in a field effect transistor (FET) device. Interestingly, measurements of the…
The extremely high carrier mobility and the unique band structure, make graphene very useful for field-effect transistor applications. According to several works, the primary limitation to graphene based transistor performance is not…
The electronic reconstruction at the interface between two insulating oxides can give rise to a highly-conductive interface. In analogy to this remarkable interface-induced conductivity we show how, additionally, magnetism can be induced at…
We report a systematic study of the contact resistance present at the interface between a metal (Ti) and graphene layers of different, known thickness. By comparing devices fabricated on 11 graphene flakes we demonstrate that the contact…
The metal-graphene contact resistance is one of the major limiting factors toward the technological exploitation of graphene in electronic devices and sensors. A high contact resistance can be detrimental to device performance and spoil the…
The electronic transport properties and the magnetic susceptibility were measured in detail in $YBaCo_2O_{5.45}$. Close to the so-called metal-insulator transition, strong effects of resistance relaxation, a clear thermal hysteresis and a…
Frequency dependence of magnetoelectric (ME) coupling is investigated in trilayers of ferromagnetic alloy and piezoelectric lead zirconate titanate (PZT). The ferromagnetic phases studied include permendur, a soft magnet with high…
Peculiarities of transport properties of three- and two-dimensional half-metallic ferromagnets are investigated, which are connected with the absence of spin-flip scattering processes. The temperature and magnetic field dependences of…