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The phenomenology of charge transport in synthetic metals is reviewed. It is argued that the conventional quasiparticle picture and Boltzmann transport theory do not apply to these materials. The central ideas of Fermi liquid theory are…

强关联电子 · 物理学 2007-05-23 V. J. Emery , S. A. Kivelson , V. N. Muthukumar

Dislocations, one-dimensional lattice imperfections, are common to technologically important materials such as III-V semiconductors, and adversely affect heat dissipation in e.g., nitride-based high-power electronic devices. For decades,…

Carrier mobility in bulk semiconductors is typically governed by electron-phonon (e-ph) scattering. In nanostructures, spatial confinement can lead to significant surface scattering, lowering mobility and breaking the spatial homogeneity…

材料科学 · 物理学 2025-12-25 Zirui He , Shang-Peng Gao , Meng Chen

Recent experimental discoveries in axis-dependent conduction polarity, or goniopolarity, have observed that the charge carriers can conduct like either electrons or holes depending on the crystallographic direction they travel along in…

材料科学 · 物理学 2020-09-23 Yaxian Wang , Prineha Narang

Semiconductive nanocrystals (NCs) can be self-assembled into ordered superlattices (SLs) to create artificial solids with emerging collective properties. Computational studies have predicted that properties such as electronic coupling or…

The first global quantum simulation of semiconductor-based quantum-cascade lasers is presented. Our three-dimensional approach allows to study in a purely microscopic way the current-voltage characteristics of state-of-the-art unipolar…

凝聚态物理 · 物理学 2009-11-07 Rita Claudia Iotti , Fausto Rossi

We study numerically an electronic transport in strongly anisotropic weakly disorderd two-dimensional systems. We find that the conductance distribution is gaussian but the conductance fluctuations increase when anisotropy becomes stronger.…

凝聚态物理 · 物理学 2009-10-31 Peter Markos

A consistent and widely accepted physical basis for interpretation of charge transport in amorphous oxide semiconductor (AOS) field-effect transistors (FETs), and more generally device physics, has been hampered by uncertainties in…

材料科学 · 物理学 2026-04-28 Ananth Dodabalapur , Chankeun Yoon , Xiao Wang

The charge transport in some organic semiconductors demonstrates nonlinear properties and further universal power-law scaling with both bias and temperature. The physical origin of this behavior is investigated here using variable range…

介观与纳米尺度物理 · 物理学 2014-12-16 Ling Li , Nianduan Lu , Ming Liu

Carbon black (CB)-elastomers can serve as low-cost, highly deformable sensor materials, but hardly any work exists on their structure-property relationships. We report on flow-induced anisotropy, considering CB-silicone films generated via…

Efficient and controlled charge transport in networks of semiconducting single-walled carbon nanotubes is the basis for their application in electronic devices, especially in field-effect transistors and thermoelectrics. The recent advances…

应用物理 · 物理学 2021-11-19 Nicolas F. Zorn , Jana Zaumseil

Transport through semiconductor nanostructures is a quantum-coherent process. This paper focuses on systems in which the electron's dynamics is ballistic and the transport is dominated by the scattering from structure boundaries. Opposite…

介观与纳米尺度物理 · 物理学 2007-05-23 E. R. Racec , P. N. Racec , U. Wulf

Understanding the charge carrier transport in the disordered organic molecular semiconductors is a fascinating and still unresolved problem in modern condensed-matter physics, yet has an extremely important bearing on their application in…

材料科学 · 物理学 2007-05-23 Ajit Kumar Mahapatro , Subhasis Ghosh

Anisotropic electronic transport is a possible route towards nanoscale circuitry design, particularly in two-dimensional materials. Proposals to introduce such a feature in patterned graphene have to date relied on large-scale structural…

介观与纳米尺度物理 · 物理学 2018-12-07 Soren Schou Gregersen , Jose H. Garcia , Antti-Pekka Jauho , Stephan Roche , Stephen R. Power

We present a theory for carrier transport in semiconducting nanoscale heterostructures that emphasizes the effects of strain at the interface between two different crystal structures. An exactly solvable model shows that the interface…

介观与纳米尺度物理 · 物理学 2012-06-25 Mark C. Sweeney , Joel D. Eaves

We present a theoretical study on the high-field charge transport on the surface of Bi$_2$Se$_3$ and reproduce all the main features of the recent experimental results, i.e., the incomplete current saturation and the finite residual…

介观与纳米尺度物理 · 物理学 2014-09-17 M. Q. Weng , M. W. Wu

We present the effect of different stacking orders on carrier transport properties of multi-layer black phosphorous. We consider three different stacking orders AAA, ABA and ACA, with increasing number of layers (from 2 to 6 layers). We…

材料科学 · 物理学 2016-01-26 A. Sengupta , M. Audiffred , T. Heine , T. A. Niehaus

We study charge transport in a monolayer molybdenum disulfide nanoflake over a wide range of carrier density, temperature, and electric bias. We find that the transport is best described by a percolating picture in which the disorder breaks…

无序系统与神经网络 · 物理学 2014-09-02 Shun-Tsung Lo , O. Klochan , C. -H. Liu , W. -H. Wang , A. R. Hamilton , C. -T. Liang

Our primary goal is to provide a rigorous treatment of scattering nonlocality in semiconductor nanostructures. On the one hand, starting from the conventional density-matrix formulation and employing as ideal instrument for the study of the…

介观与纳米尺度物理 · 物理学 2015-06-18 Roberto Rosati , Fausto Rossi

We develop a theory for density, disorder, and temperature dependent electrical conductivity of bilayer graphene in the presence of long-range charged impurity scattering as well as an additional short-range disorder of independent origin,…

介观与纳米尺度物理 · 物理学 2010-04-21 S. Das Sarma , E. H. Hwang , E. Rossi