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相关论文: Charge transport in dual gated bilayer graphene wi…

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We study the electronic transport properties of dual-gated bilayer graphene devices. We focus on the regime of low temperatures and high electric displacement fields, where we observe a clear exponential dependence of the resistance as a…

介观与纳米尺度物理 · 物理学 2010-10-12 Thiti Taychatanapat , Pablo Jarillo-Herrero

We employ dual-gated 30{\deg}-twisted bilayer graphene to demonstrate simultaneous ultra-high mobility and conductivity (up to 40 mS at room temperature), unattainable in a single-layer of graphene. We find quantitative agreement with a…

介观与纳米尺度物理 · 物理学 2022-01-12 Giulia Piccinini , Vaidotas Mišeikis , Kenji Watanabe , Takashi Taniguchi , Camilla Coletti , Sergio Pezzini

We theoretically study the transport properties of both monolayer and bilayer graphene in the presence of electron-hole puddles induced by charged impurities which are invariably present in the graphene environment. We calculate the…

介观与纳米尺度物理 · 物理学 2011-09-28 Qiuzi Li , E. H. Hwang , S. Das Sarma

Electron transport in bilayer graphene placed under a perpendicular electric field is revealed experimentally. Steep increase of the resistance is observed under high electric field; however, the resistance does not diverge even at low…

介观与纳米尺度物理 · 物理学 2011-11-16 Hisao Miyazaki , Kazuhito Tsukagoshi , Akinobu Kanda , Minoru Otani , Susumu Okada

We investigate the transport properties of double-gated bilayer graphene nanoribbons at room temperature. The devices were fabricated using conventional CMOS-compatible processes. By analyzing the dependence of the resistance at the charge…

介观与纳米尺度物理 · 物理学 2015-05-18 Bartholomaeus N. Szafranek , Daniel Schall , Martin Otto , Daniel Neumaier , Heinrich Kurz

We employ a dual-gated geometry to control the band gap \Delta in bilayer graphene and study the temperature dependence of the resistance at the charge neutrality point, RNP(T), from 220 to 1.5 K. Above 5 K, RNP(T) is dominated by two…

介观与纳米尺度物理 · 物理学 2015-05-19 K. Zou , J. Zhu

We have performed a theoretical study of electronic transport in single and bilayer graphene based on the standard linear-response (Kubo) formalism and continuum-model descriptions of the graphene band structure. We are focusing especially…

介观与纳米尺度物理 · 物理学 2010-02-25 J. Z. Bernad , U. Zuelicke , K. Ziegler

We report our theoretical calculations on the temperature and energy dependent electrical conductivity of gapped graphene within the framework of Boltzmann transport formalism. Since screening effects have known to be of vital importance in…

介观与纳米尺度物理 · 物理学 2015-04-07 Digish K Patel , A C Sharma , S S Z Ashraf

This is a theoretical study of electron transport in gated bilayer graphene - a novel semiconducting material with a tunable band gap. It is shown that the which-layer pseudospin coherence enhances the subgap conductivity and facilitates…

介观与纳米尺度物理 · 物理学 2012-05-28 Maxim Trushin

An energy gap can be opened in the electronic spectrum of graphene by lifting its sublattice symmetry. In bilayers, it is possible to open gaps as large as 0.2 eV. However, these gaps rarely lead to a highly insulating state expected for…

Two-dimensional (2D) materials have attracted significant interest due to their tunable physical properties when stacked into homo- and hetero-structures. Twisting adjacent layers introduces moir\'{e} patterns that strongly influence the…

We use temperature-dependent resistivity in small-angle twisted double bilayer graphene to measure bandwidths and gaps of the bands. This electron-hole asymmetric system has one set of non-dispersing bands that splits into two flat bands…

We report an experimental study of carrier density (n), displacement field (D) and twist angle ({\theta}) dependence of temperature (T)-linear resistivity in twisted double bilayer graphene (TDBG). For a large twist angle…

By taking into account the full four band energy spectrum, we calculate the transmission probability and conductance of electrons across symmetric and asymmetric double potential barrier with a confined interlayer potential difference in…

介观与纳米尺度物理 · 物理学 2014-01-22 Hasan A. Alshehab , Hocine Bahlouli , Abderrahim El Mouhafid , Ahmed Jellal

We study the electronic transport properties of a dual-gated bilayer graphene nanodevice via first principles calculations. We investigate the electric current as a function of gate length and temperature. Under the action of an external…

介观与纳米尺度物理 · 物理学 2011-10-03 J. E. Padilha , Matheus P. Lima , A. J. R. da Silva , A. Fazzio

Double-gated graphene devices provide an important platform for understanding electrical and optical properties of graphene. Here we present transport measurements of single layer, bilayer and trilayer graphene devices with suspended top…

介观与纳米尺度物理 · 物理学 2015-06-05 J. Velasco , Y. Lee , L. Jing , G. Liu , W. Bao , C. N. Lau

We investigate transport properties through a rectangular potential barrier in AB-stacked bilayer graphene (AB-BLG) gapped by dielectric layers. Using the Dirac-like Hamiltonian with a transfer matrix approach we obtain transmission and…

介观与纳米尺度物理 · 物理学 2021-06-30 Nadia Benlakhouy , Abderrahim El Mouhafid , Ahmed Jellal

We investigate bilayer graphene transport in the presence of electron-hole puddles induced by long-range charged impurities in the environment. We explain the insulating behavior observed in the temperature dependent conductivity of low…

介观与纳米尺度物理 · 物理学 2010-08-24 E. H. Hwang , S. Das Sarma

We review the fabrication and key transport properties of graphene double layers, consisting of two graphene monolayers placed in close proximity, independently contacted, and separated by an ultra-thin dielectric. We outline a simple band…

介观与纳米尺度物理 · 物理学 2012-06-14 Seyoung Kim , Emanuel Tutuc

We present systematic thermal conductivity measurements of suspended thin graphite ribbons, 234-527 nm thick, using a four-probe 3-omega method. Unlike recent reports of phonon hydrodynamics and exceptionally high thermal conductivity in…

介观与纳米尺度物理 · 物理学 2025-09-16 Wonjae Jeon , Yu Pei , Xun Li , Lucas Lindsay , Sangyeop Lee , Renkun Chen
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