相关论文: Statistical Modelling of ft to Process Parameters …

Top-gated graphene transistors operating at high frequencies (GHz) have been fabricated and their characteristics analyzed. The measured intrinsic current gain shows an ideal 1/f frequency dependence, indicating an FET-like behavior for…

Recent research into buffet in the transonic flow regime has been focused on a limited number of proprietary airfoil geometries and has mainly considered parametric variations in Mach number and angle of attack. In contrast, relatively…

Using 2-D self-consistent ballistic quantum transport simulations, we investigate the short-channel behavior of graphene field-effect transistors and its impact on the device transconductance and subsequently the intrinsic cut-off frequency…

We propose an explicit small-signal graphene field-effect transistor (GFET) parameter extraction procedure based on a charge-based quasi-static model. The dependence of the small-signal parameters on both gate voltage and frequency is…

This letter investigates the bias-dependent low frequency noise of single layer graphene field-effect transistors. Noise measurements have been conducted with electrolyte-gated graphene transistors covering a wide range of gate and drain…

Estimation of threshold voltage V T variability for NWFETs has been compu- tationally expensive due to lack of analytical models. Variability estimation of NWFET is essential to design the next generation logic circuits. Compared to any…

Real-time frequency measurement for non-repetitive and statistically rare signals are challenging problems in the electronic measurement area, which places high demands on the bandwidth, sampling rate, data processing and transmission…

This paper reports a comprehensive study on the impacts of temperature-change, process variation, flicker noise and device aging on the inference accuracy of pre-trained all-ferroelectric (FE) FinFET deep neural networks.…

Low-frequency noise (LFN) variability in graphene transistors (GFETs) is for the first time researched in this work. LFN from an adequate statistical sample of long-channel solution-gated single-layer GFETs is measured in a wide range of…

The Short-Time Fourier Transform (STFT) has been a staple of signal processing, often being the first step for many audio tasks. A very familiar process when using the STFT is the search for the best STFT parameters, as they often have…

This study simulated negative-capacitance double gate FinFETs with channel lengths ranging from 25nm to 100nm using TCAD. The results show that negative capacitance significantly reduces subthreshold swing as well as drain induced barrier…

A common class of methods for analyzing of multivariate time series, stationary and nonstationary, decomposes the observed series into latent sources. Methods such as principal compoment analysis (PCA), independent component analysis (ICA)…

High frequency performance limits of graphene field-effect transistors (FETs) down to a channel length of 20nm are examined by using self-consistent quantum simulations. The results indicate that although Klein band-to-band tunneling is…

The characterisation of the dynamic properties of viscoelastic monolayers of surfactants at the gasliquid interface is very important in the analysis and prediction of foam stability. With most of the relevant dynamic processes being rapid…

Extended Floating Gate Field Effect Transistors (EGFETs) are CMOS-compatible floating gate devices capable of detecting charges on their sensing area by the relative shifts in current-voltage (I-V) characteristics. The I-V shifts are…

A simulation methodology for ultra-scaled InAs quantum well field effect transistors (QWFETs) is presented and used to provide design guidelines and a path to improve device performance. A multiscale modeling approach is adopted, where…

Field-effect transistors (FETs) with single gates are adversely affected by short channel effects such as drain-induced barrier lowering (DIBL) and increases in the magnitude of sub-threshold swing as the channel length is reduced.…

The dependence of random telegraph noise (RTN) amplitude on the gate overdrive in a junctionless field-effect transistor (FinFET) with rectangular and trapezoidal channel (fin) cross sections manufactured using silicon-on-insulator…

Constructing a quantum computer requires immensely precise control over a quantum system. A lack of precision is often quantified by gate-error metrics, such as the average infidelity or the diamond distance. However, usually such…

Channel conductance measurements can be used as a tool to study thermally activated electron transport in the sub-threshold region of state-of-art FinFETs. Together with theoretical Tight-Binding (TB) calculations, this technique can be…