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We investigate electronic transport in gapped bilayer graphene (gBLG) devices. For certain edge terminations -typically a combination of zigzag, armchair, and bearded types - we observe edge state conduction within the band gap, which is…

介观与纳米尺度物理 · 物理学 2025-11-27 Jesús Arturo Sánchez-Sánchez , Thomas Stegmann

We investigate the electronic structure and transport properties of twisted bilayer graphene (TBLG) at a twist angle of $\theta\approx 1.696\text{{\deg}}$. Using a combination of molecular dynamics and tight-binding calculations, we find…

The topological properties of gapped graphene have been explored for valleytronics applications. Prior transport experiments indicated their topological nature through large nonlocal resistance in Hall-bar devices, but the origin of this…

介观与纳米尺度物理 · 物理学 2024-12-17 Hyeon-Woo Jeong , Seong Jang , Sein Park , Kenji Watanabe , Takashi Taniguchi , Gil-Ho Lee

Magic-angle twisted bilayer graphene (TBG), with rotational misalignment close to 1.1$^\circ$, features isolated flat electronic bands that host a rich phase diagram of correlated insulating, superconducting, ferromagnetic, and topological…

The unexpected discovery of superconductivity and strong electron correlation in twisted bilayer graphene (TBG), a system containing only sp electrons, is considered as one of the most intriguing developments in two-dimensional materials in…

介观与纳米尺度物理 · 物理学 2025-04-22 Wei-Chen Wang , Feng-Wu Chen , Kuan-Sen Lin , Justin T. Hou , Ho-Chun Lin , Mei-Yin Chou

The rich physics of magic angle twisted bilayer graphene (TBG) results from the Coulomb interactions of electrons in flat bands of non-trivial topology. While the bands' dispersion is well characterized, accessing their topology remains an…

介观与纳米尺度物理 · 物理学 2026-03-10 F. Mesple , P. Mallet , G. Trambly de Laissardière , C. Dutreix , G. Lapertot , J-Y. Veuillen , V. T. Renard

Tunneling conductance between two bilayer graphene (BLG) sheets separated by 2 nm-thick insulating barrier was measured in two devices with the twist angles between BLGs less than 1{\deg}. At small bias voltages, the tunneling occurs with…

The combination of field tunable bandgap, topological edge states, and valleys in the band structure, makes insulating bilayer graphene a unique localized system, where the scaling laws of dimensionless conductance g remain largely…

We present electronic structure calculations of twisted double bilayer graphene (TDBG): A tetralayer graphene structure composed of two AB-stacked graphene bilayers with a relative rotation angle between them. Using first-principles…

介观与纳米尺度物理 · 物理学 2019-11-05 F. J. Culchac , Rodrigo B. Capaz , Leonor Chico , E. Suarez Morell

We study the effect of a local potential shift induced by a side electrode on the edge modes at the boundary between gapped and ungapped bilayer graphene. A potential shift close to the gapped-ungapped boundary causes the emergence of…

介观与纳米尺度物理 · 物理学 2023-09-22 Hira Ali , Llorenç Serra

In this review, we present recent works on materials whose common point is the presence of electronic bands of very low dispersion, called "flat bands", which are due to specific atomic order effects without electron interactions. These…

We propose that the electronic structure of twisted bilayer graphene (TBG) can be understood as Dirac fermions coupled with opposite pseudo magnetic fields generated by the moir\'e pattern. The two low-energy flat bands from each monolayer…

介观与纳米尺度物理 · 物理学 2019-04-24 Jianpeng Liu , Junwei Liu , Xi Dai

Recently twisted bilayer graphene (t-BLG) emerges as a new strongly correlated physical platform near a magic twist angle, which hosts many exciting phenomena such as the Mott-like insulating phases, unconventional superconducting behavior…

Bilayer graphene (BLG) with a tunable bandgap appears interesting as an alternative to graphene for practical applications, thus its transport properties are being actively pursued. Using density functional theory and perturbation analysis,…

材料科学 · 物理学 2015-05-11 Changwon Park , Junga Ryou , Suklyun Hong , Bobby Sumpter , Gunn Kim , Mina Yoon

The electronic structures of graphene systems and topological insulators have closely-related features, such as quantized Berry phase and zero-energy edge states. The reason for these analogies is that in both systems there are two relevant…

介观与纳米尺度物理 · 物理学 2012-08-21 Jian Li , Ivar Martin , Markus Buttiker , Alberto F. Morpurgo

Spontaneous symmetry-breaking, where the ground state of a system has lower symmetry than the underlying Hamiltonian, is ubiquitous in physics. It leads to multiply-degenerate ground states, each with a different "broken" symmetry labeled…

介观与纳米尺度物理 · 物理学 2015-06-15 Jonathan S. Alden , Adam W. Tsen , Pinshane Y. Huang , Robert Hovden , Lola Brown , Jiwoong Park , David A. Muller , Paul L. McEuen

Bilayer graphene twisted at the angle of about 1.1{\deg} better known as magic angle, exhibits ultra-flat moir\'e superlattice bands that are a source of highly-tunable, exotic quantum phenomena. Such phenomena, like superconductivity,…

强关联电子 · 物理学 2024-11-05 Giovanna Feraco , Wissem Boubaker , Petra Rudolf , Antonija Grubišić-Čabo

Graphene-based nanostructures exhibit a vast range of exciting electronic properties that are absent in extended graphene. For example, quantum confinement in carbon nanotubes and armchair graphene nanoribbons (AGNRs) leads to the opening…

Staking layered materials revealed to be a very powerful method to tailor their electronic properties. It has indeed been theoretically and experimentally shown that twisted bilayers of graphene (tBLG) with a rotation angle $\theta$,…

介观与纳米尺度物理 · 物理学 2020-07-01 Omid Faizy Namarvar , Ahmed Missaoui , Laurence Magaud , Didier Mayou , Guy Trambly de Laissardière

Bilayer graphene -- two coupled single graphene layers stacked as in graphite -- provides the only known semiconductor with a gap that can be tuned externally through electric field effect. Here we use a tight binding approach to study how…

介观与纳米尺度物理 · 物理学 2010-04-29 Eduardo V. Castro , N. M. R. Peres , J. M. B. Lopes dos Santos , F. Guinea , A. H. Castro Neto
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