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相关论文: Graphene Transport at High Carrier Densities using…

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The electronic properties of few-layer graphene grown on the carbon-face of silicon carbide (SiC) are found to be strongly dependent on the number of layers. The carrier mobility is larger in thicker graphene because substrate-related…

介观与纳米尺度物理 · 物理学 2015-05-30 Wenjuan Zhu , Christos Dimitrakopoulos , Marcus Freitag , Phaedon Avouris

Electron-electron interactions play a critical role in many condensed matter phenomena, and it is tempting to find a way to control them by changing the interactions' strength. One possible approach is to place a studied system in proximity…

Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and studied for development of the QHE resistance standard. The graphene-metal contacting area in the Hall devices has been improved and…

介观与纳米尺度物理 · 物理学 2014-12-09 S. Novikov , N. Lebedeva , K. Pierz , A. Satrapinski

We investigate the transport properties of double-gated bilayer graphene nanoribbons at room temperature. The devices were fabricated using conventional CMOS-compatible processes. By analyzing the dependence of the resistance at the charge…

介观与纳米尺度物理 · 物理学 2015-05-18 Bartholomaeus N. Szafranek , Daniel Schall , Martin Otto , Daniel Neumaier , Heinrich Kurz

We studied the magneto-transport properties of graphene prepared by exfoliation on a III V semiconductor substrate. Tuneability of the carrier density of graphene was achieved by using a doped GaAs substrate as a back-gate. A GaAs/AlAs…

介观与纳米尺度物理 · 物理学 2014-08-25 Mirosław Woszczyna , Miriam Friedemann , Klaus Pierz , Thomas Weimann , Franz J. Ahlers

We experimentally investigated the properties of graphite layers produced by an easy and non-conventional method of repeatedly rubbing conventional random stacked graphite bulk against insulating and semiconductor substrates. The patterned…

材料科学 · 物理学 2014-02-18 A. R. Mailian , G. Sh. Shmavonyan , M. R. Mailian

Understanding disorder in graphene is essential for electronic applications; in contrast to conventional materials, the extraordinarily low electron-phonon scattering1, 2 in graphene implies that disorder3-7 dominates its resistivity even…

介观与纳米尺度物理 · 物理学 2011-11-14 Jun Yan , Michael S. Fuhrer

We present temperature-dependent magneto-transport experiments around the charge neutrality point in graphene and determine the amplitude of potential fluctuations $s$ responsible for the formation of electron-hole puddles. The experimental…

We numerically investigate the electronic transport properties between two mesoscopic graphene disks with a twist by employing the density functional theory coupled with non-equilibrium Green's function technique. By attaching two graphene…

介观与纳米尺度物理 · 物理学 2020-07-01 Yulei Han , Yafei Ren , Xinlong Dong , Junjie Zeng , Wei Ren , Zhenhua Qiao

A novel method for fast fabrication of mesoscopic multilayered graphene electronic devices utilizing nanoprobes to exfoliate graphite flakes is developed. The magnetoresistance of these devices exhibit pronounced Shubnikov-de Haas…

介观与纳米尺度物理 · 物理学 2015-04-10 Christopher Coleman , Davie Mtsuko , Chris Botha , Somnath Bhattacharyyaa

Intrinsic rhombohedral graphene hosts an unusual low-energy electronic wavefunction, predominantly localized at its outer crystal faces with negligible presence in the bulk. Increasing the number of graphene layers amplifies the density of…

We report macroscopic sheets of highly conductive bilayer graphene with exceptionally high hole concentrations of ~ $10^{15}$ $cm^{-2}$ and unprecedented sheet resistances of 20-25 {\Omega} per square over macroscopic scales, and obtained…

We report on the existence of water-gated charge doping of graphene deposited on atomically flat mica substrates. Molecular films of water in units of ~0.4 nm-thick bilayers were found to be present in regions of the interface of…

材料科学 · 物理学 2021-07-16 Jihye Shim , Chun Hung Lui , Taeg Yeoung Ko , Young-Jun Yu , Philip Kim , Tony F. Heinz , Sunmin Ryu

We report an experimental study of carrier density (n), displacement field (D) and twist angle ({\theta}) dependence of temperature (T)-linear resistivity in twisted double bilayer graphene (TDBG). For a large twist angle…

Graphene has exceptional optical, mechanical and electrical properties, making it an emerging material for novel optoelectronics, photonics and for flexible transparent electrode applications. However, the relatively high sheet resistance…

介观与纳米尺度物理 · 物理学 2013-02-06 Guang-Xin Ni , Yi Zheng , Sukang Bae , Chin Yaw Tan , Orhan Kahya , Jing Wu , Byung Hee Hong , Kui Yao , Barbaros Özyilmaz

The potential of graphene-based materials consisting of one or a few layers of graphite for integrated electronics originates from the large room-temperature carrier mobility in these systems (approx. 10,000 cm2/Vs). However, the…

介观与纳米尺度物理 · 物理学 2007-12-04 Jeroen B. Oostinga , Hubert B. Heersche , Xinglan Liu , Alberto F. Morpurgo , Lieven M. K. Vandersypen

When twisted to angles near 1{\deg}, graphene multilayers provide a new window on electron correlation physics by hosting gate-tuneable strongly-correlated states, including insulators, superconductors, and unusual magnets. Here we report…

We report an electron transport study of lithographically fabricated graphene nanoribbons of various widths and lengths at different temperatures. At the charge neutrality point, a length-independent transport gap forms whose size is…

介观与纳米尺度物理 · 物理学 2015-05-14 Melinda Y. Han , Juliana C. Brant , Philip Kim

We consider a graphene sheet in the vicinity of a substrate, which contains charged impurities. An analytic expression for the probability distribution function of voltage fluctuations due to the charged impurities is derived. The…

介观与纳米尺度物理 · 物理学 2008-01-14 Victor Galitski , Shaffique Adam , S. Das Sarma

We calculate the transport properties of multilayer graphene, considering the effect of multisubband scattering in a high density regime, where higher subbands are occupied by charge carriers. To calculate the conductivity of multilayer…

介观与纳米尺度物理 · 物理学 2017-05-12 Seungchan Woo , E. H. Hwang , Hongki Min