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相关论文: Graphene Transport at High Carrier Densities using…

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We present a detailed numerical study of the electronic properties of single-layer graphene with resonant ("hydrogen") impurities and vacancies within a framework of noninteracting tight-binding model on a honeycomb lattice. The algorithms…

介观与纳米尺度物理 · 物理学 2010-09-29 Shengjun Yuan , Hans De Raedt , Mikhail I. Katsnelson

We calculate the temperature-dependent charge carrier transport of bilayer graphene (BLG) impacted by Coulomb impurity scattering within the random phase approximation. We find the polarizability is equal to the density of states at zero…

介观与纳米尺度物理 · 物理学 2010-05-18 Min Lv , Shaolong Wan

We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors. Pulsed IV measurements established increasing electron velocities with decreasing…

We develop a microscopic theory of a strong electromagnetic field interaction with gated bilayer graphene. Quantum kinetic equations for density matrix are obtained using a tight binding approach within second quantized Hamiltonian in an…

介观与纳米尺度物理 · 物理学 2017-05-24 A. A. Avetisyan , A. P. Djotyan , K. Moulopoulos

Charge carrier scattering is critical to the electrical properties of two-dimensional materials such as graphene, transition metal dichalcogenide monolayers, black phosphorene, and tellurene. Beyond pristine two-dimensional materials,…

介观与纳米尺度物理 · 物理学 2018-09-14 Dongchao Xu , Shuang Tang , Xu Du , Qing Hao

We introduce a new scheme to realize suspended, multi-terminal graphene structures that can be current annealed successfully to obtain uniform, very high quality devices. A key aspect is that the bulky metallic contacts are not connected…

介观与纳米尺度物理 · 物理学 2014-01-17 Dong-Keun Ki , Alberto F. Morpurgo

We have produced ultrathin epitaxial graphite films which show remarkable 2D electron gas (2DEG) behavior. The films, composed of typically 3 graphene sheets, were grown by thermal decomposition on the (0001) surface of 6H-SiC, and…

Using a solid electrolyte to tune the carrier density in thin-film materials is an emerging technique that has potential applications in both basic and applied research. Until now, only materials containing small ions, such as protons and…

材料科学 · 物理学 2017-06-16 Jialin Zhao , Meng Wang , Xuefu Zhang , Yue Lv , Tianru Wu , Shan Qiao , Shufeng Song , Bo Gao

Electronic transport properties of monolayer graphene with extreme physical bending up to 90o angle are studied using ab Initio first-principle calculations. The importance of key structural parameters including step height, curvature…

量子物理 · 物理学 2011-01-31 Haiyuan Gao , Yang Xu , Meijiao Li , Zhendong Guo , Hongshen Chen , Zhonghe Jin , Bin Yu

We investigate the transport properties of high-quality single-layer graphene, epitaxially grown on a 6H-SiC(0001) substrate. We have measured transport properties, in particular charge carrier density, mobility, conductivity and…

介观与纳米尺度物理 · 物理学 2013-05-29 Johannes Jobst , Daniel Waldmann , Florian Speck , Roland Hirner , Duncan K. Maude , Thomas Seyller , Heiko B. Weber

In a two-dimensional electron gas, the electron-electron interaction generally becomes stronger at lower carrier densities and renormalizes the Fermi liquid parameters such as the effective mass of carriers. We combine experiment and theory…

介观与纳米尺度物理 · 物理学 2016-11-03 J. Li , L. Z. Tan , K. Zou , A. A. Stabile , D. J. Seiwell , K. Watanabe , T. Taniguchi , Steven G. Louie , J. Zhu

This letter investigates low frequency 1/ f noise in hBN encapsulated graphene device in a dual gated geometry. The noise study is performed as a function of top gate carrier density (nT G) at different back gate densities (nBG). The noise…

介观与纳米尺度物理 · 物理学 2023-09-22 Aaryan Mehra , Roshan Jesus Mathew , Chandan Kumar

Epitaxial graphene films were grown in vacuo by silicon sublimation from the (0001) and (000-1) faces of 4H- and 6H-SiC. Hall effect mobilities and sheet carrier densities of the films were measured at 300 K and 77 K and the data depended…

Charge carriers in a graphene sheet, a single layer of graphite, exhibit much distinctive characteristics to those in other two-dimensional electronic systems because of their chiral nature. In this report, we focus on the observation of…

介观与纳米尺度物理 · 物理学 2012-05-28 Dong-Keun Ki , Dongchan Jeong , Jae-Hyun Choi , Kee-Su Park , Hu-Jong Lee

A method is suggested to separately determine the surface density of positively and negatively charged impurities that limit the mobility in a graphene monolayer. The method is based on the exact result for the transport cross-section,…

介观与纳米尺度物理 · 物理学 2007-09-05 D. S. Novikov

We fabricate and investigate high quality graphene devices with contactless, suspended top gates, and demonstrate formation of graphene pnp junctions with tunable polarity and doping levels. The device resistance displays distinct…

介观与纳米尺度物理 · 物理学 2011-08-12 Jairo Velasco , Gang Liu , Wenzhong Bao , Chun Ning Lau

We present transport measurements on a bilayer graphene sheet with homogeneous back gate and split top gate. The electronic transport data indicates the capability to direct electron flow through graphene nanostructures purely defined by…

介观与纳米尺度物理 · 物理学 2012-10-10 S. Dröscher , C. Barraud , K. Watanabe , T. Taniguchi , T. Ihn , K. Ensslin

The influence of magnetic impurities on the transport properties of graphene is investigated in the regime of strong applied electric fields. As a result of electron-hole pair creation, the response becomes nonlinear and dependent on the…

介观与纳米尺度物理 · 物理学 2014-09-02 Arnaud Demion , Alberto D. Verga

We study electron transport properties of a monoatomic graphite layer (graphene) with different types of disorder. We show that the transport properties of the system depend strongly on the character of disorder. Away from half filling, the…

介观与纳米尺度物理 · 物理学 2007-05-23 P. M. Ostrovsky , I. V. Gornyi , A. D. Mirlin

The problem of electrostatic screening of a charged line by undoped or weakly doped graphene is treated beyond the linear-response theory. The induced electron density is found to be approximately doping independent, n(x)~(log x)^2/x^2, at…

介观与纳米尺度物理 · 物理学 2015-06-24 Bor-Yuan Jiang , Michael M. Fogler