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相关论文: Bipolar Transistor Based on Graphane

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Single layers of carbon dubbed "graphenes", from which graphite is built, have attracted broad interest in the scientific community because of recent exciting experimental results. Graphene is interesting from a fundamental research…

材料科学 · 物理学 2008-01-05 Yakov Kopelevich , Pablo Esquinazi

The unique property of bilayer graphene to show a band gap tunable by external electrical fields enables a variety of different device concepts with novel functionalities for electronic, optoelectronic and sensor applications. So far the…

Electric double layer supercapacitors are promising devices for high-power energy storage based on the reversible absorption of ions into porous, conducting electrodes. Graphene is a particularly good candidate for the electrode material in…

介观与纳米尺度物理 · 物理学 2015-03-19 Brian Skinner , M. M. Fogler , B. I. Shklovskii

This paper describes the behavior of top gated transistors fabricated using carbon, particularly epitaxial graphene on SiC, as the active material. In the past decade research has identified carbon-based electronics as a possible…

We show analytically that the ability of Dirac materials to localize an electron in both a barrier and a well can be utilized to open a pseudo-gap in graphene's spectrum. By using narrow top-gates as guiding potentials, we demonstrate that…

介观与纳米尺度物理 · 物理学 2020-11-17 R. R. Hartmann , M. E. Portnoi

Fabrication of graphene field effect transistor is described which uses an intrinsic graphene on the surface of as deposited hydrogenated amorphous carbon films. Ambipolar characteristic has been demonstrated typical for graphene devices,…

介观与纳米尺度物理 · 物理学 2014-02-24 Savcho Tinchev

We calculate the conductance G of a bipolar junction in a graphene nanoribbon, in the high-magnetic field regime where the Hall conductance in the p-doped and n-doped regions is 2e^2/h. In the absence of intervalley scattering, the result…

介观与纳米尺度物理 · 物理学 2013-07-09 J. Tworzydlo , I. Snyman , A. R. Akhmerov , C. W. J. Beenakker

We utilize an organic polymer buffer layer between graphene and conventional gate dielectrics in top-gated graphene transistors. Unlike other insulators, this dielectric stack does not significantly degrade carrier mobility, allowing for…

Graphene is a sturdy and chemically inert material exhibiting an exposed two-dimensional electron gas of high mobility. These combined properties enable the design of graphene composites either based on covalent or non- covalent coupling of…

介观与纳米尺度物理 · 物理学 2015-03-19 Adrien Allain , Zheng Han , Vincent Bouchiat

We investigate the thermoelectric properties of a hybrid nanodevice composed by a 2D carbon based material and a superconductor. This system presents nonlinear bipolar thermoelectricity as induced by the spontaneous breaking of the…

介观与纳米尺度物理 · 物理学 2023-04-11 Lorenzo Bernazzani , Giampiero Marchegiani , Francesco Giazotto , Stefano Roddaro , Alessandro Braggio

Quantum spin Hall insulator/metal interfaces are formed in graphene ribbons with intrinsic spin-orbit coupling by selectively doping two regions creating a potential step. For a clean graphene ribbon, the transmission of the topological…

介观与纳米尺度物理 · 物理学 2015-03-17 Elsa Prada , Georgo Metalidis

Graphene, being an ultrathin, durable, flexible, transparent material with superior conductivity and unusual optical properties, promises many novel applications in electronics, photonics and optoelectronics. For applications in…

Graphene field-effect transistors with source/drain contacts made of metals that can be easily oxidized such as ferromagnetic metals often display a double dip structure in the transfer characteristics because of charge density depinning at…

材料科学 · 物理学 2014-07-28 Ryo Nouchi , Katsumi Tanigaki

Due to the lack of two-dimensional silicon-based semiconductors and the fact that most of the components and devices are generated on single-crystal silicon or silicon-based substrates in modern industry, designing two-dimensional…

介观与纳米尺度物理 · 物理学 2017-06-05 Yan Qian , Haiping Wu , Erjun Kan , Kaiming Deng

We have fabricated and measured ballistic graphene transistors with two oblique gates that can be independently biased. The gate lengths are about 38 nm and are separated by a distance of 30 nm, the tilting angle being of 45o with respect…

介观与纳米尺度物理 · 物理学 2016-07-27 Mircea Dragoman , Adrian Dinescu , Daniela Dragoman

Hydrogenation has proven to be an effective tool to open the bandgap of graphene. In the present density functional study we demonstrate that single-side-hydrogenated graphene is a semiconductor with an indirect bandgap of 1.89 eV, in…

材料科学 · 物理学 2011-03-01 Bhalchandra S. Pujari , Sergey Gusarov , Michael Brett , Andriy Kovalenko

We present a minimal but crucial microscopic theory for epitaxial graphene and graphene nanoribbons on the 4H-SiC(0001) surface -- protopypical materials to explore physical properties of graphene in large scale. Coarse-grained model…

介观与纳米尺度物理 · 物理学 2009-12-08 Seungchul Kim , Jisoon Ihm , Hyoung Joon Choi , Young-Woo Son

Graphene nano-ribbons junctions based electronic devices are proposed in this Letter. Non-equilibrium Green function calculations show that nano-ribbon junctions tailored from single layer graphene with different edge shape and width can…

介观与纳米尺度物理 · 物理学 2007-06-13 Zhiping Xu

We fabricate superconductor-graphene-superconductor Josephson junctions with superconducting regions made of lead (Pb). The critical current through grapehene may be modulated by external magnetic field; the resulting Fraunhofer…

介观与纳米尺度物理 · 物理学 2018-07-04 I. V. Borzenets , U. C. Coskun , H. Mebrahtu , G. Finkelstein

The nature of electron correlations in bilayer graphene has been investigated. An analytic expression for the radial distribution function is derived for an ideal electron gas and the corresponding static structure factor is evaluated. We…

介观与纳米尺度物理 · 物理学 2015-05-20 D. S. L. Abergel , Tapash Chakraborty