相关论文: Arrays of Ag split-ring resonators coupled to InGa…

Purcell-enhanced quantum dot single-photon emission in the telecom C-band from InAs quantum dots inside circular Bragg grating cavities is shown. The InAs quantum dots are grown by means of molecular beam epitaxy on an InP substrate and are…

Several emission features mark semiconductor quantum dots as promising non-classical light sources for prospective quantum implementations. For long-distance transmission [1] and Si-based on-chip processing[2, 3], the possibility to match…

On-chip emitters that can generate single and entangled photons are essential building blocks for developing photonic quantum information processing technologies in a scalable fashion. Semiconductor quantum dots (QDs) are attractive…

We present Purcell-enhanced ($F_\mathrm{P}>25$) semiconductor InAs quantum dot decay times of $T_1<30\,$ps, enabled by deterministic hybrid circular Bragg gratings (hCBGs). We investigate the benefits of these short $T_1$ times on the…

Solid-state quantum emitters embedded in circular Bragg resonators are attractive due to their ability to emit quantum states of light with high brightness and low multi-photon probability. As for any emitter-microcavity system, fabrication…

Embedding semiconductor quantum dots into bullseye resonators has significantly advanced the development of bright telecom quantum light sources for fiber-based quantum networks. To further improve the device flexibility and stability, the…

We analyze the steady-state transmission of high-momentum (high-$k$) electromagnetic waves through metal-semiconductor multilayer systems with loss and gain in the near-infrared (NIR). Using a semi-classical optical gain model in…

We present a combined experimental and simulation study of a single self-assembled InGaAs quantum dot coupled to a nearby ($\sim 25nm$) plasmonic antenna. Micro-photoluminescence spectroscopy shows a $\sim 2.4\times$ increase of intensity,…

We measured resonant Raman scattering by intersubband electronic excitations in GaAs/AlAs single quantum wells (QWs) with well widths ranging from 8.5 to 18 nm. In narrow (less than 10 nm) QWs with sufficiently high electron concentrations,…

We report on two pulse, degenerate four wave mixing (DFWM) measurements on shallow InGaN/GaN multi-quantum wells (MQWs) grown on sapphire substrates. These reveal pulse length limited signal decays. We have found a 10:1 resonant enhancement…

Integrated photonic circuits provide a versatile toolbox of functionalities for advanced quantum optics applications. Here, we demonstrate an essential component of such a system in the form of a Purcell enhanced single-photon source based…

We report on a photoconductive gain in semiconductor quantum wires which are lithographically defined in an AlGaAs/GaAs quantum well via a shallow-etch technique. The effect allows resolving the one-dimensional subbands of the quantum wires…

The combination of semiconductor quantum dots (QDs) with photonic cavities is a promising way to realize non-classical light sources with state-of-the-art performances in terms of brightness, indistinguishability and repetition rate. In the…

Hereby, we present results of finite-difference time-domain simulations of technologically undemanding photonic structures offering a significant improvement in the spectrally broad extraction efficiency of emission from a quantum emitter…

We demonstrate mid-IR integrated race-track resonators on a III-V semiconductor platform,InGaAs core epitaxially grown on InP. We have performed a complete characterization of the optical propagation losses at wavelength = 4.6 um and…

Quantum dots are promising candidates for telecom single photon sources due to their tunable emission across the different low-loss telecommunications bands, making them compatible with existing fiber networks. Their suitability for…

We study quantum point contacts in two-dimensional topological insulators by means of quantum transport simulations for InAs/GaSb heterostructures and HgTe/(Hg,Cd)Te quantum wells. In InAs/GaSb, the density of edge states shows an…

We have investigated the optical and transport properties of MBE grown short-period superlattices of InAs/GaAs with different numbers of periods (3 <= N <= 24) and a total thickness 14 nm. Bandstructure calculations show that these…

We present molecular beam epitaxial grown single- and double-side $\delta$-doped InAlSb/InSb quantum wells with varying distances down to 50 nm to the surface on GaSb metamorphic buffers. We analyze the surface morphology as well as the…

The electronic structure of strain-engineered single InGaAs/GaAs quantum dots emitting in the telecommunication O band is probed experimentally by photoluminescence excitation spectroscopy. Observed resonances can be attributed to p-shell…