基于宽带圆柱型纳米腔体的InAs/GaAs量子点Purcell增强单光子发射
量子物理
2025-04-29 v3 介观与纳米尺度物理
光学
摘要
芯片级可产生单光子和纠缠光子的发射器是开发可扩展光子量子信息处理技术的关键构件。半导体量子点（QDs）是一种吸引力人选，因为它们可以在需求下发射高质量的量子光态，但发射速率受其自发辐射寿命的限制。本研究利用Purcell效应，演示了InAs量子点通过耦合到金属覆覆的GaAs纳米柱中，实现了最高38倍的发射速率提升。这些腔体具有亚波长模式体积为4.5×10⁻⁴（λ/n）³，低质量因子为62，使其支持宽带15 nm的Purcell增强单光子发射。宽带特性消除了通常为实现QD腔共振而需要的调谐机制，从而放宽了制造约束。最终，这种QD腔体结构代表了向开发产生接近理想单光子态、以GHz级重复率发射的固态量子发射器迈出的重要一步。
引用
@article{arxiv.2407.11642,
title = {Purcell-enhanced single-photon emission from InAs/GaAs quantum dots coupled to broadband cylindrical nanocavities},
author = {Abhiroop Chellu and Subhajit Bej and Hanna Wahl and Hermann Kahle and Topi Uusitalo and Roosa Hytönen and Heikki Rekola and Jouko Lang and Eva Schöll and Lukas Hanschke and Patricia Kallert and Tobias Kipp and Christian Strelow and Marjukka Tuominen and Klaus D. Jöns and Petri Karvinen and Tapio Niemi and Mircea Guina and Teemu Hakkarainen},
journal= {arXiv preprint arXiv:2407.11642},
year = {2025}
}
备注
v2: Minor changes have been made to the manuscript after v1: Title has been modified. Reference number 42 and 62 updated. The manuscript has been edited to improve the general readability of the text v3: A comprehensive discussion on the collection efficiency of this QD-cavity source has been added in the "Discussions" section of the manuscript. Figure 1 and Figure 6 have been updated