相关论文: Modulation Induced Phase Transition from Fractiona…

We have investigated the effect of unidirectional periodic potential modulation on the fractional quantum Hall (FQH) states located within the filling factor range $1<\nu<2$. We find that odd-numerator FQH states are strongly suppressed,…

We study the phase diagram of $\nu_e=7/3$ state in the $N=1$ Landau level in the presence of band mass anisotropy. Using density matrix renormalization group on an infinite cylinder geometry, we find a continuous transition from the…

Fractional conductance is measured by partitioning $\nu = 1$ edge state using gate-tunable fractional quantum Hall (FQH) liquids of filling 1/3 or 2/3 for current injection and detection. We observe two sets of FQH plateaus 1/9, 2/9, 4/9…

We report on the dramatic evolution of the quantum Hall ferromagnet in the fractional quantum Hall regime at $\nu = 2/5$ filling. A large enhancement in the characteristic timescale gives rise to a dynamical transition into a novel…

We study the \nu=5/2 even-denominator fractional quantum Hall effect (FQHE) over a wide range of magnetic (B) field in a heterojunction insulated gate field-effect transistor (HIGFET). The electron density can be tuned from n=0 to 7.6…

The physical properties of striped Hall state in the presence of an external unidirectional periodic potential is investigated. The study of searching the optimal orientation of the state is reported for the state at filling factor…

We have observed in a low density two-dimensional hole system (2DHS) of extremely high quality (with hole density p=1.6x10^{10} cm^{-2} and mobility \mu=0.8x10^6 cm^2/Vs) that, as the 2DHS is continuously tilted with respect to the…

Effects of backward scattering between fractional quantum Hall (FQH) edge modes are studied. Based on the edge-state picture for hierarchical FQH liquids, we discuss the possibility of the transitions between different plateaux of the…

In this paper, the density-matrix renormalization group method is employed to investigate the fractional quantum Hall effect at filling fractions $\nu=1/3$ and 5/2. We first present benchmark results at both filling fractions for large…

In a GaAs/AlGaAs quantum well of electron density 1x10^{11} cm^{-2} we observe a fractional quantum Hall effect (FQHE) at filling factors nu=4/11, and 5/13, and weaker states at nu=6/17, 4/13, 5/17 and 7/11. These sequences of fractions do…

We investigated the behavior of fractional quantum Hall (FQH) states in a two-dimensional electron system with layer thickness and an in-plane magnetic field. Our comparisons across various filling factors within the first Landau level…

We measured the magnetoresistance of bilayer quantum Hall (QH) effects at the fractional filling factor $\nu =2/3$ by changing the total electron density and the density difference between two layers. Three different QH states were…

The effect of a one-dimensional periodic electrostatic modulation on quantum Hall systems with filling factor \nu=1 is studied. We propose that, either when the amplitude of the modulation potential or the tilt angle of the magnetic field…

Geometric fluctuations of the density mode in a fractional quantum Hall (FQH) state can give rise to a nematic FQH phase, a topological state with a spontaneously broken rotational symmetry. While experiments on FQH states in the second…

Mean-field calculations for the two dimensional electron gas (2DEG) in a large magnetic field with a partially filled Landau level with index $N\geq 2$ consistently yield ``stripe-ordered'' charge-density wave ground-states, for much the…

We present a spectrum of experimental data on the fractional quantum Hall effect (FQHE) states in the first excited Landau level, obtained in an ultrahigh mobility two-dimensional electron system (2DES) and at very low temperatures and…

We report on the influence of a periodic potential on the fractional quantum Hall effect (FQHE) states in monolayer graphene. We have shown that for two values of the magnetic flux per unit cell (one-half and one-third flux quantum) an…

We study the behavior of the extended states of a two-dimensional electron system in silicon in a magnetic field, B. Our results show that the extended states, corresponding to the centers of different Landau levels, merge with the lowest…

By numerical exact diagonalization techniques, we obtain the quantum phase diagram of the lattice fractional quantum Hall (FQH) systems in the presence of quenched disorder. By implementing an array of local potential traps representing the…

We study the phase transitions of bosonic $\nu=1/2$ fractional quantum Hall (FQH) effect in different topological lattice models under the interplay of onsite periodic potential and Hubbard repulsion. Through exact diagonalization and…