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相关论文: Derivation of the t-J model for finite doping

200 篇论文

Based on the analysis of the measurement data of angle-resolved photoemission spectroscopy (ARPES) and optics, we show that the charge transfer gap is significantly smaller than the optical one and is reduced by doping in electron doped…

超导电性 · 物理学 2013-05-29 T. Xiang , H. G. Luo , D. H. Lu , K. M. Shen , Z. X. Shen

Within the t-t'-J model, the doping dependence of charge dynamics in electron-doped cuprates is studied. The conductivity spectrum shows a pseudogap structure with a low-energy peak appearing at $\omega\sim 0$ and an rather sharp…

强关联电子 · 物理学 2009-11-10 Tianxing Ma , Huaiming Guo , Shiping Feng

Normal and superconducting state spectral properties of cuprates are theoretically described within the extended t-J model. The method is based on the equations of motion for projected fermionic operators and the mode-coupling approximation…

超导电性 · 物理学 2015-06-25 A. Ramsak , P. Prelovsek

We study the effects of hole doping on one-dimensional Mott insulators with orbital degrees of freedom. We describe the system in terms of a generalized t-J model. At a specific point in parameter space the model becomes integrable in…

强关联电子 · 物理学 2009-01-08 J. Sirker , J. Damerau , A. Klümper

We have introduced a new perturbative approach for $t-J-V$ model where Hubbard operators are treated as fundamental objects. Using our vertices and propagators we have developed a controllable large-N expansion to calculate different…

强关联电子 · 物理学 2009-11-10 Adriana Foussats , Andrés Greco

It has become clear in the past several years that the cuprates show many unusual properties, both in the normal and superconducting states, especially in the underdoped region. In particular, gap-like behavior is observed in magnetic…

强关联电子 · 物理学 2009-10-31 Patrick A. Lee

We investigate the highly incoherent regime of hole-doped 2d Mott-Hubbard insulators at moderately small doping and temperatures T>=0.1J, where J is the exchange coupling. Within an extended dynamical mean-field theory of the t-J model and…

强关联电子 · 物理学 2009-11-10 K. Haule , A. Rosch , J. Kroha , P. Wölfle

Unravelling the nature of doping-induced transition between a Mott insulator and a weakly correlated metal is crucial to understanding novel emergent phases in strongly correlated materials. For this purpose, we study the evolution of…

强关联电子 · 物理学 2018-03-14 Yao Wang , Brian Moritz , Cheng-Chien Chen , Thomas P. Devereaux , Krzysztof Wohlfeld

We show that the recently proposed doped carrier Hamiltonian formulation of the t-J model should be complemented with the constraint that projects out the unphysical states. With this new important ingredient, the previously used and…

强关联电子 · 物理学 2013-05-29 Rafael T. Pepino , Alvaro Ferraz , Evgueny Kochetov

A powerful new impurity solver is shown to permit a systematic study of the doping driven Mott transition in a one-band Hubbard model within the framework of single-site dynamical mean field theory. At small dopings and large interaction…

强关联电子 · 物理学 2013-05-29 Philipp Werner , Andrew J. Millis

We study the t-t'-t''-J model with parameters chosen to model an electron-doped high temperature superconductor. The model with one, two and four charge carriers is solved on a 32-site lattice using exact diagonalization. Our results…

强关联电子 · 物理学 2007-05-23 P. W. Leung

Using the two-particle self-consistent approach and cluster perturbation theory for the two-dimensional t-t'-t''-U Hubbard model, we discuss weak- and strong-coupling mechanisms for the pseudogap observed in recent angle resolved…

强关联电子 · 物理学 2009-11-10 V. Hankevych , B. Kyung , A-M. Dare , D. Senechal , A. M. Tremblay

In the generalized-tJ model the effect of the large local Coulomb repulsion is accounted for by restricting the Hilbert space to states with at most one electron per site. In this case the electronic system can be viewed in terms of holes…

强关联电子 · 物理学 2009-11-11 Tiago C. Ribeiro , Xiao-Gang Wen

The doping-induced metal-insulator transition in two-chain systems of correlated fermions is studied using a solvable limit of the t-J model and the fact that various strong- and weak-coupling limits of the two-chain model are in the same…

强关联电子 · 物理学 2009-10-31 H. J. Schulz

Spectral functions are evaluated numerically within the t-t'-J model as relevant for electron-doped cuprates. The Fermi surface develops from a pocket-like into a large one with doping. The corresponding pseudogap in the nodal direction is…

强关联电子 · 物理学 2007-07-31 M. M. Zemljic , P. Prelovsek , T. Tohyama

We present an exact diagonalization study of the single particle spectral function in the so-called t-t'-t''-J model in 2D. As a key result, we find that unlike the `pure' t-J model, hole doping leads to a major reconstruction of the…

超导电性 · 物理学 2009-10-28 R. Eder , Y. Ohta , G. A. Sawatzky

We propose using ultracold fermionic atoms trapped in a periodically shaken optical lattice as a quantum simulator of the t-J Hamiltonian, which describes the dynamics in doped antiferromagnets and is thought to be relevant to the problem…

强关联电子 · 物理学 2020-06-02 Hongmin Gao , Jonathan R. Coulthard , Dieter Jaksch , Jordi Mur-Petit

The generalized spin stiffness constant for a doped quantum antiferromagnet has been investigated both analytically and numerically as a function of doping concentration at zero temperature, based on the strongly correlated t-J model on…

强关联电子 · 物理学 2016-09-21 Suraka Bhattacharjee , Ranjan Chaudhury

The theory of superconductivity within the t-J model, as relevant for cuprates, is developed. It is based on the equations of motion for projected fermionic operators and the mode-coupling approximation for the self-energy matrix. The…

强关联电子 · 物理学 2009-11-11 P. Prelovsek , A. Ramsak

The t-J model is a paradigmatic model for the study of strongly correlated electron systems. In particular, it has been argued that it is an appropriate model to describe the cuprate high-Tc superconductors. It turns out that a…

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