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We report magnetotransport properties of a two-dimensional electron gas confined at MgZnO/ZnO heterointerface in a high magnetic field up to 26 T. High electron mobility and low charge carrier density enabled the observation of the…

介观与纳米尺度物理 · 物理学 2012-11-14 Y. Kozuka , A. Tsukazaki , D. Maryenko , J. Falson , S. Akasaka , K. Nakahara , S. Nakamura , S. Awaji , K. Ueno , M. Kawasaki

We present a scaling description of a metal-insulator transition in two-dimensional electron systems that is driven by a vanishing compressibility rather than a vanishing diffusion coefficient. A small set of basic assumptions leads to a…

强关联电子 · 物理学 2016-12-06 D. Belitz , T. R. Kirkpatrick

By carefully analyzing the low temperature density dependence of 2D conductivity in undoped high mobility n-GaAs heterostructures, we conclude that the 2D metal-insulator transition in this system is a density inhomogeneity driven…

介观与纳米尺度物理 · 物理学 2009-11-10 S. Das Sarma , M. P. Lilly , E. H. Hwang , L. N. Pfeiffer , K. W. West , J. L. Reno

The critical electron density for the metal-insulator transition in a two-dimensional electron gas can be determined by two distinct methods: (i) a sign change of the temperature derivative of the resistance, and (ii) vanishing activation…

强关联电子 · 物理学 2007-05-23 A. A. Shashkin , S. V. Kravchenko , T. M. Klapwijk

Experimental evidence for the possible universality classes of the metal-insulator transition (MIT) in two dimensions (2D) is discussed. Sufficiently strong disorder, in particular, changes the nature of the transition. Comprehensive…

强关联电子 · 物理学 2016-03-22 Dragana Popović

Recent thermodynamic measurements on two-dimensional (2D) electron systems have found diverging behavior in the magnetic susceptibility and appearance of ferromagnetism with decreasing electron density. The critical densities for these…

强关联电子 · 物理学 2007-05-23 S. M. Fazeli , K. Esfarjani , B. Tanatar

We compare the results of the transport and time-resolved magneto-luminescence measurements in disordered 2D electron systems in GaAs-AlGaAs heterostructures in the extreme quantum limit, in particular, in the vicinity of the…

凝聚态物理 · 物理学 2009-10-28 I. V. Kukushkin , Vladimir I. Fal'ko , R. J. Haug , K. v. Klitzing , K. Eberl

The interplay between strong Coulomb interactions and randomness has been a long-standing problem in condensed matter physics. According to the scaling theory of localization, in two-dimensional systems of noninteracting or weakly…

强关联电子 · 物理学 2007-05-23 S. V. Kravchenko , M. P. Sarachik

We report on the first experimental observation of an apparent metal insulator transition in a 2D electron gas confined in an InAs quantum well. At high densities we find that the carrier mobility is limited by background charged impurities…

介观与纳米尺度物理 · 物理学 2014-10-15 J. Shabani , S. Das Sarma , C. J. Palmstrøm

A novel variational method is proposed for calculating the percolation threshold, the real-space structure, and the thermodynamical compressibility of a disordered two-dimensional electron liquid. Its high accuracy is verified against prior…

介观与纳米尺度物理 · 物理学 2007-05-23 Michael M. Fogler

A magnetotransport study in magnetically doped (Cd,Mn)Te 2D quantum wells reveals an apparent metal-insulator transition as well as an anomalous intermediate phase just on its metallic side. This phase is characterized by colossal…

介观与纳米尺度物理 · 物理学 2010-01-10 J. Jaroszynski , T. Andrearczyk , G. Karczewski , J. Wróbel , T. Wojtowicz , Dragana Popovic , T. Dietl

The lecture introduces a reader to the relatively young field of physics of strongly interacting and disordered 2D electron system, in particular, to the phenomena of the metallic conduction and the apparent metal-insulator transition in…

强关联电子 · 物理学 2014-03-27 V. M. Pudalov

For more than a decade it was widely accepted that two-dimensional electrons are insulating at zero temperature and at zero magnetic-field. Experimentally it was demonstrated that, when placed in a strong perpendicular magnetic field, the…

凝聚态物理 · 物理学 2007-05-23 Y. Hanein , D. Shahar , Hadas Shtrikman , J. Yoon , C. C. Li , D. C. Tsui

We argue that there is a new liquid phase in the two-dimensional electron system in Si MOSFETs at low enough electron densities. The recently observed metal-insulator transition results as a crossover from the percolation transition of the…

强关联电子 · 物理学 2009-10-30 Song He , X. C. Xie

We reexamine the problem of delocalization of two-dimensional electrons in the presence of random magnetic field. By introducing spatial correlations among random fluxes, a well-defined metal-insulator transition characterized by a…

无序系统与神经网络 · 物理学 2007-05-23 D. N. Sheng , Z. Y. Weng

A long skinny gate across a fractional quantum Hall fluid at filling $\nu=1/m$ with odd integer $m$, creates a novel one-dimensional (1d) system which is isomorphic to a disordered 1d electron gas with {\it attractive} interactions. By…

凝聚态物理 · 物理学 2009-10-28 C. L. Kane , Matthew P. A. Fisher

The quantum Hall effect is investigated in a high-mobility two-dimensional electron gas on the surface of a cylinder. The novel topology leads to a spatially varying filling factor along the current path. The resulting inhomogeneous…

介观与纳米尺度物理 · 物理学 2010-11-01 K. -J. Friedland , A. Siddiki , R. Hey , H. Kostial , A. Riedel , D. K. Maude

The in-plane magnetoconductance of the strongly interacting two-dimensional electron system in a silicon MOSFET (metal-oxide-semiconductor-field-effect transistor) exhibits an unmistakeable kink at a well-defined electron density, $n_k$.…

强关联电子 · 物理学 2019-04-12 Shiqi Li , Qing Zhang , Pouyan Ghaemi , M. P. Sarachik

The magnetotransport of a high-mobility two-dimensional electron gas coupled to a hovering split-ring resonator with controllable distance is studied in the quantum Hall regime. The measurements reveal an enhancement by more than a factor 2…

A scanning probe technique was used to obtain a high-resolution map of the random electrostatic potential inside the quantum Hall liquid. A sharp metal tip, scanned above a semiconductor surface, sensed charges in an embedded…

介观与纳米尺度物理 · 物理学 2009-10-31 G. Finkelstein , P. I. Glicofridis , R. C. Ashoori , M. Shayegan
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