中文
相关论文

相关论文: From stochastic single atomic switch to nanoscale …

200 篇论文

Binary collision simulations of high-fluence 1 keV Si ion implantation into 8 nm thick SiO2 films on (001)Si were combined with kinetic Monte Carlo simulations of Si nanocrystal (NC) formation by phase separation during annealing. For…

材料科学 · 物理学 2009-11-07 Torsten Mueller , Karl-Heinz Heinig , Wolfhard Moeller

Exotic features of a metal/oxide/metal (MOM) sandwich, which will be the basis for a drastically innovative nonvolatile memory device, is brought to light from a physical point of view. Here the insulator is one of the ubiquitous and…

强关联电子 · 物理学 2009-11-13 I. H. Inoue , S. Yasuda , H. Akinaga , H. Takagi

The morphology and dimension of the conductive filament formed in a memristive device are strongly influenced by the thickness of its switching medium layer. Aggressive scaling of this active layer thickness is critical towards reducing the…

The demand for low-dissipation nanoscale memory devices is as strong as ever. As Moore's Law is staggering, and the demand for a low-power-consuming supercomputer is high, the goal of making information processing circuits out of…

超导电性 · 物理学 2017-07-18 Andrew Murphy , Dmitri Averin , Alexey Bezryadin

Many nanoelectronic devices rely on thin dielectric barriers through which electrons tunnel. For instance, aluminium oxide barriers are used as Josephson junctions in superconducting electronics. The reproducibility and drift of circuit…

介观与纳米尺度物理 · 物理学 2020-02-05 M. J. Cyster , J. S. Smith , J. A. Vaitkus , N. Vogt , S. P. Russo , J. H. Cole

Superlattices may play an important role in next generation electronic and spintronic devices if the key-challenge of the reading and writing data can be solved. This challenge emerges from the coupling of low dimensional individual layers…

介观与纳米尺度物理 · 物理学 2014-08-04 S. Narayana Jammalamadaka , Johan Vanacken , V. V. Moshchalkov

Resistance switching random access memory (ReRAM), with the ability to repeatedly modulate electrical resistance, has been highlighted as a feasible high-density memory with the potential to replace negative-AND (NAND) flash memory. Such…

介观与纳米尺度物理 · 物理学 2018-04-11 Yang Lu , Jung Ho Yoon , Yanhao Dong , I-Wei Chen

Non-volatile resistive switching is demonstrated in memristors with nanocrystalline molybdenum disulfide (MoS$_2$) as the active material. The vertical heterostructures consist of silicon, vertically aligned MoS$_2$ and chrome / gold metal…

Current-biased Josephson junctions can act as detectors of electromagnetic radiation. At optimal conditions, their sensitivity is limited by fluctuations causing stochastic switching from the superconducting to the resistive state. This…

超导电性 · 物理学 2025-04-30 Vladimir M. Krasnov

Power consumption is the main limitation in the development of new high performance random access memory for portable electronic devices. Magnetic RAM (MRAM) with CoFeB/MgO based magnetic tunnel junctions (MTJs) is a promising candidate for…

Metallic oxides encased within Metal-Insulator-Metal (MIM) structures can demonstrate both unipolar and bipolar switching mechanisms, rendering them the capability to exhibit a multitude of resistive states and ultimately function as memory…

介观与纳米尺度物理 · 物理学 2012-06-14 Marcus Wu Shihong , Themistoklis Prodromakis , Iulia Salaoru , Christofer Toumazou

Memristors that mimic brain functions are crucial for energy-efficient neuromorphic devices. Ion channels that emulate biological synapses are still in the early stages of development, especially the tunability of memory states. Here, we…

材料科学 · 物理学 2024-12-09 Dhal Biswabhusan , Puzari Animesh , Li-Hsien Yeh , Kalon Gopinadhan

Emerging non-volatile memories (NVMs) have currently attracted great interest for their potential applications in advanced low-power information storage and processing technologies. Conventional NVMs, such as magnetic random access memory…

Reversible opto-mechanical molecular switch based on a single azobenzene molecule suspended via thiolate links between realistic models of gold tips is investigated. Using a combination of the transfer matrix technique and density…

材料科学 · 物理学 2015-06-16 M. Zemanová Diešková , I. Štich , P. Bokes

Semiconductor nanowires are the building blocks of many nanoscale electrical and neuromorphic circuits. Here, we demonstrate a simple arrangement wherein an ethanol-adsorbed ZnO single nanowire, deposited between gold electrodes using…

应用物理 · 物理学 2020-04-15 Justin Derickson , Benjamin Kerr Barnes , Kausik S Das

We report the realization of a completely controllable high-speed nanomechanical memory element fabricated from single-crystal silicon wafers. This element consists of a doubly-clamped suspended nanomechanical beam structure, which can be…

其他凝聚态物理 · 物理学 2007-05-23 Robert L. Badzey , Guiti Zolfagharkhani , Alexei Gaidarzhy , Pritiraj Mohanty

The Josephson junction (JJ) is the corner stone of superconducting electronics and quantum information processing. While the technology for fabricating low $T_{c}$ JJ is mature and delivers quantum circuits able to reach the "quantum…

This letter reports on the observation of optoelectronic switching in addressable molecular crossbar junctions fabricated using polymer stamp-printing method. The active medium in the junction is a molecular self-assembled monolayer softly…

软凝聚态物质 · 物理学 2009-04-28 J. C. Li

With the ability to selectively control ionic flux, biological protein ion channels perform a fundamental role in many physiological processes. For practical applications that require the functionality of a biological ion channel, graphene…

We develop a robust and versatile platform to define nanostructures at oxide interfaces via patterned top gates. Using LaAlO$_3$/SrTiO$_3$ as a model system, we demonstrate controllable electrostatic confinement of electrons to nanoscale…

介观与纳米尺度物理 · 物理学 2015-04-10 Srijit Goswami , Emre Mulazimoglu , Lieven M. K. Vandersypen , Andrea D. Caviglia