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相关论文: Valley filter in strain engineered graphene

200 篇论文

Electrons in graphene, in addition to their spin, have two pseudospin degrees of freedom: sublattice and valley pseudospin. Valleytronics uses the valley degree of freedom as a carrier of information similar to the way spintronics uses…

介观与纳米尺度物理 · 物理学 2013-04-03 D. Moldovan , M. Ramezani Masir , L. Covaci , F. M. Peeters

We investigate real- and lattice-spin currents controlled by strain in a silicene-based junction, where chemical potential, perpendicular electric field and circularly polarized light are applied into the strained barrier. We find that the…

介观与纳米尺度物理 · 物理学 2017-08-22 Sarayut Phonapha , Assanai Suwanvarangkoon , Bumned Soodchomshom

The electronic properties of graphene under any arbitrary uniaxial strain field are obtained by an exact mapping of the corresponding tight-binding Hamiltonian into an effective one-dimensional modulated chain. For a periodic modulation,…

介观与纳米尺度物理 · 物理学 2015-06-19 Gerardo G. Naumis , Pedro Roman-Taboada

We study ballistic transport of Dirac electrons through a strip in silicene, when the strip is exposed to off-resonant circularly polarized light and an electric field applied perpendicular to the silicene plane. We show that the…

介观与纳米尺度物理 · 物理学 2016-06-22 Yawar Mohammadi , Borhan Arghavani Nia

Experiments have confirmed that double monolayer graphene cannot generate finite temperature electron-hole superfluidity. This has been shown to be due to very strong screening of the electron-hole pairing attraction. The linear dispersing…

超导电性 · 物理学 2015-12-17 Luca Dell'Anna , Andrea Perali , Lucian Covaci , David Neilson

Graphene/hexagonal boron nitride (hBN) heterostructures represent a promising class of metal-insulator-semiconductor systems widely explored for multifunctional digital device applications. In this work, we demonstrate that graphene, when…

介观与纳米尺度物理 · 物理学 2025-05-28 A. Belayadi , C. I. Osuala , I. Assi , A. Naif , J. P. F. LeBlanc , A. Abbout

The ability to resolve the polarization of light with on-chip devices represents an urgent problem in optoelectronics. The detectors with polarization resolution demonstrated so far mostly require multiple oriented detectors or movable…

介观与纳米尺度物理 · 物理学 2022-05-19 Valentin Semkin , Dmitry Mylnikov , Elena Titova , Sergey Zhukov , Dmitry Svintsov

We study graphene with an adsorbed spin texture, where the localized spins create a periodic magnetic flux. The latter produces gaps in the graphene spectrum and breaks the valley symmetry. The resulting effective electronic model, which is…

材料科学 · 物理学 2011-03-31 Antonio Hill , Andreas Sinner , Klaus Ziegler

Since its discovery, Berry phase has been demonstrated to play an important role in many quantum systems. In gapped Bernal bilayer graphene, the Berry phase can be continuously tuned from zero to 2pi, which offers a unique opportunity to…

介观与纳米尺度物理 · 物理学 2020-04-29 Yi-Wen Liu , Zhe Hou , Si-Yu Li , Qing-Feng Sun , Lin He

Electron fully spin-polarized edge states in graphene emerged at the interfaces of a nonuniform magnetic field are studied numerically in a tight-binding model, with both the orbital and Zeeman-splitting effects of magnetic field…

材料科学 · 物理学 2011-09-19 Lei Xu , Jin An , Chang-De Gong

The long-wavelength physics of monolayer graphene in the presence of periodic strain fields has a natural chiral scattering network description. When the strain field varies slowly compared to the graphene lattice and the effective magnetic…

介观与纳米尺度物理 · 物理学 2023-01-18 Christophe De Beule , Vo Tien Phong , E. J. Mele

The valley Chern-effect is theoretically demonstrated with a novel alternating current circuitry, where closed-loop LC-resonators sitting at the nodes of a honeycomb lattice are inductively coupled along the bonds. This enables us to…

介观与纳米尺度物理 · 物理学 2019-05-01 Yishai Eisenberg , Yafis Barlas , Emil Prodan

Electronic instabilities at the crossing of the Fermi energy with a Van Hove singularity in the density of states often lead to new phases of matter such as superconductivity, magnetism or density waves. However, in most materials this…

介观与纳米尺度物理 · 物理学 2011-04-18 Guohong Li , A. Luican , J. M. B. Lopes dos Santos , A. H. Castro Neto , A. Reina , J. Kong , E. Y. Andrei

We investigate interaction-induced valley domain walls in bilayer graphene in the $\nu=0$ quantum Hall state, subject to a perpendicular electric field that is antisymmetric across a line in the sample. Such a state can be realized in a…

强关联电子 · 物理学 2012-05-10 Chia-Wei Huang , Efrat Shimshoni , H. A. Fertig

The valley degrees of freedom of carriers in crystals is useful to process information and perform logic operations, and it is a key factor for valley application to realize the valley polarization. Here, we propose a model that the valley…

材料科学 · 物理学 2022-01-19 San-Dong Guo , Xiao-Shu Guo , Xiu-Xia Cai , Bang-Gui Liu

We show that strained or deformed honeycomb lattices are promising platforms to realize fractional topological quantum states in the absence of any magnetic field. The strained induced pseudo magnetic fields are oppositely oriented in the…

强关联电子 · 物理学 2012-07-04 P. Ghaemi , J. Cayssol , D. N. Sheng , A. Vishwanath

Realistic relaxed configurations of triaxially strained graphene quantum dots are obtained from unbiased atomistic mechanical simulations. The local electronic structure and quantum transport characteristics of y-junctions based on such…

介观与纳米尺度物理 · 物理学 2013-06-20 Zenan Qi , D. A. Bahamon , Vitor M. Pereira , Harold S. Park , D. K. Campbell , A. H. Castro Neto

Dirac electrons in graphene have a valley degree of freedom that is being explored as a carrier of information. In that context of "valleytronics" one seeks to coherently manipulate the valley index. Here we show that reflection from a…

介观与纳米尺度物理 · 物理学 2018-09-12 C. W. J. Beenakker , N. V. Gnezdilov , E. Dresselhaus , V. P. Ostroukh , Y. Herasymenko , I. Adagideli , J. Tworzydlo

The one-loop polarization function of graphene has been calculated at zero temperature for arbitrary wavevector, frequency, chemical potential (doping), and band gap. The result is expressed in terms of elementary functions and is used to…

强关联电子 · 物理学 2008-12-12 P. K. Pyatkovskiy

It has been indicated that the path forward for the widespread usage of ferroelectric (FE) materials may be considerably facilitated through the reduction of programming voltages to on-chip logic compatible values of < 1 V. Obstacles…

应用物理 · 物理学 2025-05-29 S. Natani , P. Khajanji , L. Cheng , K. Eshraghi , Z. Zhang , W. Shipley , A. Tao , P. R. Bandaru