相关论文: Valley filter in strain engineered graphene

Coherent manipulation of binary degrees of freedom is at the heart of modern quantum technologies. Graphene offers two binary degrees: the electron spin and the valley. Efficient spin control has been demonstrated in many solid state…

We consider the corrugated monolayer graphene membrane electromagnetic (from both valleys) response in terahertz range. We study the generated in irradiated graphene total current for the first time taking into account both the synthetic…

Using full-potential density functional theory (DFT) calculations, we found a small asymmetry in the Fermi velocity of electrons and holes in graphene. These Fermi velocity values and their average were found to decrease with increasing…

Ballistic point contact (BPC) with zigzag edges in graphene is a main candidate of a valley filter, in which the polarization of the valley degree of freedom can be selected by using a local gate voltage. Here, we propose to detect the…

Here we show that twisted graphene trilayer made by misoriented stacking a graphene monolayer on top of a Bernal graphene bilayer can exhibit rich and tailored electronic properties. For the case that the graphene monolayer and bilayer are…

Valley degrees of freedom offer a potential resource for quantum information processing if they can be effectively controlled. We discuss an optical approach to this problem in which intense light breaks electronic symmetries of a…

We fabricate a vertical thin-film barristor device consisting of highly doped silicon (gate), 300 nm SiO2 (gate dielectric), monolayer graphene, pentacene, and a gold top electrode. We show that the current across the device is modulated by…

The review is focused on our recent predictions of nontrivial physical phenomena taking place in the nanostructure single-layer grapheme on ferroelectric substrate, which are related with magnetic field. In particular we predicted that…

We derive the angular generation density of photoexcited carriers in gapless and gapped Bernal bilayer graphene. Exploiting the strong anisotropy of the band structure of bilayer graphene at low energies due to trigonal warping, we show…

Single-layer graphene exhibits exceptional mechanical properties attractive for optomechanics: it combines low mass density, large tensile modulus, and low bending stiffness. However, at visible wavelengths, graphene absorbs weakly and…

Interfacing atomically thin van der Waals semiconductors with magnetic substrates enables additional control on their intrinsic valley degree of freedom and provides a promising platform for the development of novel valleytronic devices for…

Topologically protected zero-line modes appear at the interface between two regions of the monolayer graphene in quantum anomalous Hall phase with different Chern number. In the presence of staggered sublattice potential, the band gaps of…

The demand for compact, high-speed and energy-saving circuitry urges higher efficiency of spintronic devices that can offer a viable alternative for the current electronics. The route towards this goal suggests implementing two-dimensional…

A two-dimensional electron system placed in a magnetic field develops Landau levels, where strong Coulomb interactions lead to the appearance of many-body correlated ground states. Quantum numbers similar to the electron spin enable the…

We propose a realization of perfect valley filters based on the chiral domain-wall channels between a quantum anomalous Hall insulator and a quantum valley Hall insulator. Uniquely, all these channels reside in the same valley and propagate…

Monolayer graphene with an energy gap presents a pseudospin symmetry broken ferromagnet with a perpendicular pseudomagnetization whose direction is switched by altering the type of doping between n and p. We demonstrate an electrical…

Graphene has recently been shown to possess giant nonlinearity; however, the utility of this nonlinearity is limited due to high losses and small interaction volume. We show that by performing waveguide engineering to graphene's…

Two-dimensional (2D) ferrovalley semiconductor (FVSC) with spontaneous valley polarization offers an exciting material platform for probing Berry phase physics. How FVSC can be incorporated in valleytronic device applications, however,…

Gapless bilayer graphene is susceptible to a variety of spontaneously gapped states. As predicted by theory and observed by experiment, the ground state is however topologically trivial, because a valley-independent gap is energetically…

Strain is extensively used to controllably tailor the electronic properties of materials. In the context of indirect band-gap semiconductors such as silicon, strain lifts the valley degeneracy of the six conduction band minima, and by…