相关论文: The localization transition at finite temperatures…
Using a three-frequency one-dimensional kicked rotor experimentally realized with a cold atomic gas, we study the transport properties at the critical point of the metal-insulator Anderson transition. We accurately measure the…
The electronic thermoelectric coefficients are analyzed in the vicinity of one and two Anderson localization thresholds in three dimensions. For a single mobility edge, we correct and extend previous studies, and find universal approximants…
So far, the efficiency of thermoelectric energy conversion remains low compared to traditional technologies, such as coal or nuclear. This low efficiency can be explained by connecting the thermoelastic properties of the electronic working…
The electronic transport properties in the presence of a temperature gradient in disordered systems near the metal-insulator transition [MIT] are considered. The d.c. conductivity $\sigma$, the thermoelectric power $S$, the thermal…
The scaling behavior of the thermoelectric transport properties in disordered systems is studied in the energy region near the metal-insulator transition. Using an energy-dependent conductivity $\sigma$ obtained experimentally, we extend…
We study the thermoelectric transport properties in the three-dimensional Anderson model of localization near the metal-insulator transition [MIT]. In particular, we investigate the dependence of the thermoelectric power S, the thermal…
This letter reports thermopower and conductivity measurements through the metal-insulator transition for 2-dimensional electron gases in high mobility Si-MOSFET's. At low temperatures both thermopower and conductivity show critical behavior…
Based on a selfconsistent theory of localization we study the electron transport properties of a disordered system in the framework of the Anderson model on a Bethe lattice. In the calculation of the dc conductivity we separately discuss…
This paper reports thermopower and conductivity measurements through the metal-insulator transition for 2-dimensional electron gases in high mobility Si-MOSFETs. At low temperatures both thermopower and conductivity show critical behaviour…
The electronic properties of disordered systems at the Anderson metal-insulator transition (MIT) have been the subject of intense study for several decades. Thermoelectric properties at the MIT, such as thermopower and thermal conductivity,…
We present a review of theoretical and experimental works on the problem of mutual interplay of Anderson localization and superconductivity in strongly disordered systems. We start with brief discussion of modern aspects of localization…
The interplay between Mott and Anderson routes to localization in disordered interacting systems gives rise to different transitions and transport regimes. Here, we investigate the phase diagram at finite temperatures using dynamical mean…
In this paper we present a thorough study of transport, spectral and wave-function properties at the Anderson localization critical point in spatial dimensions $d = 3$, $4$, $5$, $6$. Our aim is to analyze the dimensional dependence and to…
We study Anderson transition for light in three dimensions by performing large-scale ab-initio simulations of electromagnetic wave transport in disordered ensembles of conducting spheres. A mobility edge that separates diffusive transport…
We study transport of interacting electrons in a low-dimensional disordered system at low temperature $T$. In view of localization by disorder, the conductivity $\sigma(T)$ may only be non-zero due to electron-electron scattering. For weak…
We study the thermal transport properties in three-dimensional disordered systems close to the metal-insulator transition within linear response. Using a suitable form for the energy-dependent conductivity $\sigma$, we show that the value…
The physics of Anderson transitions between localized and metallic phases in disordered systems is reviewed. The term ``Anderson transition'' is understood in a broad sense, including both metal-insulator transitions and quantum-Hall-type…
The Anderson localization transition is one of the most well studied examples of a zero temperature quantum phase transition. On the other hand, many open questions remain about the phenomenology of disordered systems driven far out of…
We study analytically the metal-insulator transition in a disordered conductor by combining the self-consistent theory of localization with the one parameter scaling theory. We provide explicit expressions of the critical exponents and the…
We present numerical results for the statistics of $z$'s ($z$'s are defined as logarithm of eigenvalues of the transfermatrix $T^\dag T$) at the critical points of Anderson transition in 3D and 4D. The change of the density of $z$ due to…