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相关论文: Atomically thin MoS2: A new direct-gap semiconduct…

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Two-dimensional (2D) compounds provide unique building blocks for novel layered devices and hybrid photonic structures. However, large surface-to-volume ratio in thin films enhances the significance of surface interactions and charging…

Two dimensional materials offer a path forward for smaller and more efficient devices. Their optical and electronic properties give way to beat the limits set in place by Moore's Law. Plasmon are the collective oscillations of electrons and…

介观与纳米尺度物理 · 物理学 2020-12-21 Eoin Moynihan , Stefan Rost , Eoghan O'Connell , Quentin Ramasse , Christoph Friedrich , Ursel Bangert

In semiconductor physics, many essential optoelectronic material parameters can be experimentally revealed via optical spectroscopy in sufficiently large magnetic fields. For monolayer transition-metal dichalcogenide semiconductors, this…

介观与纳米尺度物理 · 物理学 2020-08-20 M. Goryca , J. Li , A. V. Stier , T. Taniguchi , K. Watanabe , E. Courtade , S. Shree , C. Robert , B. Urbaszek , X. Marie , S. A. Crooker

Monolayer molybdenum disulphide (MoS$_2$) is a promising two-dimensional (2D) material for nanoelectronic and optoelectronic applications. The large-area growth of MoS$_2$ has been demonstrated using chemical vapor deposition (CVD) in a…

Phosphorene, a single atomic layer of black phosphorus, has recently emerged as a new twodimensional (2D) material that holds promise for electronic and photonic technology. Here we experimentally demonstrate that the electronic structure…

The structural, electronic, and dielectric (optical) properties of graphene-like 2D MgO monolayer have been explored through first-principles calculations under bi-axial tensile and compressive mechanical strain within a range of -10% to…

材料科学 · 物理学 2024-05-31 Kamal Kumar , Anjali Kumari , Soni Mishra , Ramesh Sharma , Abhishek Kumar Mishra

Atomically thin MoS$_{2}$ crystals have been recognized as a quasi-2D semiconductor with remarkable physics properties. This letter reports our Raman scattering measurements on multilayer and monolayer MoS$_{2}$, especially in the…

介观与纳米尺度物理 · 物理学 2015-06-11 Hualing Zeng , Bairen Zhu , Kai Liu , Jiahe Fan , Xiaodong Cui , Q. M. Zhang

We report for the first time the direct growth of Molybdenum disulfide (MoS$_2$) monolayers on nanostructured silicon-on-insulator waveguides. Our results indicate the possibility of utilizing the Chemical Vapour Deposition (CVD) on…

Optical excitation typically enhances electrical conduction and low-frequency radiation absorption in semiconductors. We have, however, observed a pronounced transient decrease of conductivity in doped monolayer molybdenum disulfide (MoS2),…

介观与纳米尺度物理 · 物理学 2014-10-22 C. H. Lui , A. J. Frenzel , D. V. Pilon , Y. -H. Lee , X. Ling , G. M. Akselrod , J. Kong , N. Gedik

Transition metal dichalcogenides (TMDs) are layered two-dimensional semiconductors explored for various optoelectronic applications, ranging from light-emitting diodes to single-photon emitters. To interact strongly with light, such devices…

介观与纳米尺度物理 · 物理学 2024-07-15 Juri G. Crimmann , Moritz N. Junker , Yannik M. Glauser , Nolan Lassaline , Gabriel Nagamine , David J. Norris

Based on first-principles calculations, the materials properties (structural, electronic, vibrational, and optical properties) of out-of-plane heterostructures formed from the transiti on metal dichalcogenides, specifically MoS$_2$-WSe$_2$…

材料科学 · 物理学 2016-03-23 Bin Amin , Thaneshwor P. Kaloni , Georg Schreckenbach , Michael S. Freund

Scalable fabrication of high quality photodetectors derived from synthetically grown monolayer transition metal dichalcogenides is highly desired and important for wide range of nanophotonics applications. We present here scalable…

应用物理 · 物理学 2017-10-03 Alexander E. Yore , K. K. H. Smithe , Sauraj Jha , Kyle Ray , Eric Pop , A. K. M. Newaz

We demonstrate the continuous tuning of the electronic structure of atomically thin MoS2 on flexible substrates by applying a uniaxial tensile strain. A redshift at a rate of ~70 meV per percent applied strain for direct gap transitions,…

介观与纳米尺度物理 · 物理学 2013-06-24 Keliang He , Charles Poole , Kin Fai Mak , Jie Shan

By using first-principles calculations, we investigated the monolayer $ReS_2$ with vacancies under strain engineering, specifically focusing on its energy of formation, band gap, electron density of states, effective mass and optical…

材料科学 · 物理学 2016-11-28 Y. M. Min , L. Z. Liu

Two dimensional (2D) atomic crystals of graphene, and transition metal dichalcogenides have emerged as a class of materials that show strong light-matter interaction. This interaction can be further controlled by embedding such materials…

Ultrathin lateral heterostructures of monolayer MoS2 and WS2 have successfully been realized with the metal-organic chemical vapor deposition method. Atomic-resolution HAADF-STEM observations have revealed that the junction widths of…

We calculate from first principles the electronic structure and optical properties of a number of transition metal dichalcogenide (TMD) bilayer heterostructures consisting of MoS2 layers sandwiched with WS2, MoSe2, MoTe2, BN, or graphene…

介观与纳米尺度物理 · 物理学 2013-09-12 Hannu-Pekka Komsa , Arkady V. Krasheninnikov

We present a photoluminescence study of freestanding and Si/SiO2 supported single- and few-layer MoS2. The single-layer exciton peak (A) is only observed in freestanding MoS2. The photoluminescence of supported single-layer MoS2 is instead…

The research field of two dimensional (2D) materials strongly relies on optical microscopy characterization tools to identify atomically thin materials and to determine their number of layers. Moreover, optical microscopy-based techniques…

Structural defects in 2D-transition metal dichalcogenides are critical in modulating their optical and electrical behavior. Nevertheless, precise defect control within the monolayer regime poses a significant challenge. Herein, a…

介观与纳米尺度物理 · 物理学 2025-09-30 Anagha Gopinath , Faiha Mujeeb , Subhabrata Dhar , Jyoti Mohanty