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We report results of investigation of the low-frequency excess noise in device channels made from topological insulators - a new class of materials with a bulk insulating gap and conducting surface states. The thin-film bismuth selenide…

We propose an electromechanical transducer based on a resonant-tunneling configuration that, with respect to the standard tunneling transducers, allows larger tunneling currents while using the same bias voltage. The increased current leads…

量子物理 · 物理学 2015-05-18 Roberto Onofrio , Carlo Presilla

We demonstrate that shot noise in Fe/MgO/Fe/MgO/Fe double-barrier magnetic tunnel junctions is determined by the relative magnetic configuration of the junction and also by the asymmetry of the barriers. The proposed theoretical model,…

介观与纳米尺度物理 · 物理学 2012-09-21 J. P. Cascales , D. Herranz , F. G. Aliev , T. Szczepanski , V. K. Dugaev , J. Barnas , A. Duluard , M. Hehn , C. Tiusan

We analyze the transport properties of a semiconductor based bilayer system under non-equilibrium conditions with special emphasis on the charge transfer statistics in the regime dominated by the exciton transport. We consider two different…

介观与纳米尺度物理 · 物理学 2013-08-06 H. Soller , A. Komnik

We have studied low-frequency resistance fluctuations in shadow-evaporated Al/AlOx/Al tunnel junctions. Between 300 K and 5 K the spectral density follows a 1/f-law. Below 5 K, individual defects distort the 1/f-shape of the spectrum. The…

Non-equilibrium excess noise of a short quasi one-dimensional constriction between two superconductors is considered. A general expression for the current-current correlation function valid for arbitrary temperatures and bias voltages is…

凝聚态物理 · 物理学 2009-10-28 J. P. Hessling , V. S. Shumeiko , Yu. M. Galperin , G. Wendin

We present transport measurements of silicon MOS split gate structures with and without Sb implants. We observe classical point contact (PC) behavior that is free of any pronounced unintentional resonances at liquid He temperatures. The…

介观与纳米尺度物理 · 物理学 2015-05-20 A. Shirkhorshidian , N. C. Bishop , J. Dominguez , R. K. Grubbs , J. R. Wendt , M. P. Lilly , M. S. Carroll

We report a direct detection of time correlated single-electron tunneling oscillations in a series array of small tunnel junctions. Here the current, I, is made up of a lattice of charge solitons moving throughout the array by time…

介观与纳米尺度物理 · 物理学 2007-05-23 Jonas Bylander , Tim Duty , Per Delsing

Tunneling in the presence of an opaque barrier, part of which varies in time, is investigated numerically and analytically in one dimension. Clearly, due to the varying barrier a tunneling particle experiences spectral widening. However, in…

凝聚态物理 · 物理学 2015-06-24 Er'el Granot

We present experimental and numerical results from a real-time detection of time-correlated single-electron tunneling oscillations in a one-dimensional series array of small tunnel junctions. The electrons tunnel with a frequency f=I/e,…

介观与纳米尺度物理 · 物理学 2009-11-11 Jonas Bylander , Tim Duty , Per Delsing

It is shown, with citing tunnel junction as an example, that mutual interplay of electron quantum transfers in a conducting system can be the fast mechanism for generation fundamental low-frequency flicker conductance fluctuations (1/f…

统计力学 · 物理学 2007-05-23 Yu. E. Kuzovlev , Yu. V. Medvedev , A. M. Grishin

We consider a hybrid system consisting of two normal metal leads weakly connected to a superconductor. Current-current correlations of the normal leads are studied in the tunneling limit at subgap voltages and temperatures. We find that…

介观与纳米尺度物理 · 物理学 2007-05-23 G. Bignon , M. Houzet , F. Pistolesi , F. W. J. Hekking

Strain is commonly used in metal-oxide-semiconductor technologies to boost on-state performance. This booster has been in production for at least a decade. Despite this, a systematic study of the impact of strain on off-state leakage…

介观与纳米尺度物理 · 物理学 2025-02-03 Felipe Murphy-Armando , Chang Liu , Yi Zhao , Ray Duffy

We have studied the $1/f$ voltage noise of gold nano-contacts in electromigrated and mechanically controlled break-junctions having resistance values $R$ that can be tuned from 10 $\Omega$ (many channels) to 10 k$\Omega$ (single atom…

介观与纳米尺度物理 · 物理学 2014-01-03 ZhengMing Wu , SongMei Wu , S. Oberholzer , M. Steinacher , M. Calame , C. Schönenberger

We report an experimentally observed anomalous doubly split spectrum and its split-width fluctuation in an ultrastrongly coupled superconducting qubit and resonator. From an analysis of Rabimodel and circuit model Hamiltonians, we found…

量子物理 · 物理学 2022-01-05 Akiyoshi Tomonaga , Hiroto Mukai , Fumiki Yoshihara , Jaw-Shen Tsai

We perform the investigations of the resonant tunneling via impurities embedded in the AlAs barrier of a single GaAs/AlGaAs heterostructure. In the $I(V)$ characteristics measured at 30mK, the contribution of individual donors is resolved…

介观与纳米尺度物理 · 物理学 2009-11-10 M. Gryglas , M. Baj , B. Chenaud , B. Jouault , G. Faini , A. Cavanna

We study intrinsic noise of current in a superconducting single-electron transistor, taking into account both coherence effects and Coulomb interaction near a Cooper-pair resonance. Due to this interplay, the statistics of tunneling events…

介观与纳米尺度物理 · 物理学 2009-11-07 Mahn-Soo Choi , Francesco Plastina , Rosario Fazio

The tunneling through a ferromagnet/normal metal/ferromagnet double junction in the Coulomb blockade regime is studied, assuming that the spin relaxation time of electron in the central metallic island is sufficiently large. Using the…

介观与纳米尺度物理 · 物理学 2007-05-23 H. Giang Bach , V. Hung Nguyen , T. Anh Pham

A nanomechanical resonator coupled to a tunnel junction is studied. The oscillator modulates the transmission of the junction, changing the current and the noise spectrum. The influence of the oscillator on the noise spectrum of the…

介观与纳米尺度物理 · 物理学 2007-05-23 J. Wabnig , J. Rammer , A. L. Shelankov

This letter investigates the bias-dependent low frequency noise of single layer graphene field-effect transistors. Noise measurements have been conducted with electrolyte-gated graphene transistors covering a wide range of gate and drain…

介观与纳米尺度物理 · 物理学 2018-10-22 Nikolaos Mavredakis , Ramon Garcia Cortadella , Andrea Bonaccini Calia , Jose A. Garrido , David Jiménez