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相关论文: Seebeck effect in the conducting LaAlO_{3}/SrTiO_{…

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The effect of growth conditions on the structural and electronic properties of the polar/non-polar LaCrO$_3$/SrTiO$_3$ (LCO/STO) interface has been investigated. The interface is either insulating or metallic depending on growth conditions.…

材料科学 · 物理学 2019-06-04 A. H. Al-Tawhid , J. R. Frick , D. B. Dougherty , D. P. Kumah

We report remarkably low residual resistivity, giant residual resistivity ratio, free-electron-like Hall resistivity and high mobility ($\approx$ 10$^4$ cm$^2$V$^{-1}$s$^{-1}$) charge transport in epitaxial films of Co$_2$MnSi and…

材料科学 · 物理学 2014-01-07 P. K. Rout , Himanshu Pandey , Lijun Wu , Anupam , P. C. Joshi , Z. Hossain , Yimei Zhu , R. C. Budhani

The two-dimensional electron gas at the LaTiO3/SrTiO3 or LaAlO3/SrTiO3 oxide interfaces becomes superconducting when the carrier density is tuned by gating. The measured resistance and superfluid density reveal an inhomogeneous…

When insulator LaAlO3 is grown by epitaxy onto a TiO2-terminated {100} surface of insulator SrTiO3, the resulting system has a metallic character. This phenomenon has been associated with an electrostatic frustration at the interface, as…

Ferromagnetism and superconductivity are in most cases adverse. However, recent experiments reveal that they coexist at interfaces of LaAlO3 and SrTiO3. We analyze the magnetic state within density functional theory and provide evidence…

强关联电子 · 物理学 2012-01-20 N. Pavlenko , T. Kopp , E. Y. Tsymbal , G. A. Sawatzky , J. Mannhart

The low-temperature resistance of a conducting LaAlO3/SrTiO3 interface with a 10 nm thick LaAlO3 film decreases by more than 50% after illumination with light of energy higher than the SrTiO3 band-gap. We explain our observations by optical…

We investigate the effect of the laser parameters of pulsed laser deposition on the film stoichiometry and electronic properties of LaAlO_3/SrTiO_3 (001) heterostructures. The La/Al ratio in the LaAlO_3 films was varied over a wide range…

材料科学 · 物理学 2015-06-15 H. K. Sato , C. Bell , Y. Hikita , H. Y. Hwang

We have investigated the properties of interfaces between LaAlO3 films grown on SrTiO3 substrates singly terminated by TiO2. We used RF sputtering in a high-pressure oxygen atmosphere. The films are smooth, with flat surfaces. Transmission…

材料科学 · 物理学 2011-11-23 I. M. Dildar , D. B. Boltje , M. H. S. Hesselberth , Q. Xu , H. W. Zandbergen , S. Harkema

We present measurements of the low temperature electrical transport properties of the two dimensional carrier gas that forms at the interface of $(111)$ (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$ (LSAT/STO) as a function of…

强关联电子 · 物理学 2017-08-29 V. V. Bal , Z. Huang , K. Han , Ariando , T. Venkatesan , V. Chandrasekhar

We report measurements of the Seebeck effect in both the $ab$ plane ($S_{\rm a}$) and along the $c$ axis ($S_{\rm c}$) of the cuprate superconductor La$_{1.6-x}$Nd$_{0.4}$Sr$_{x}$CuO$_4$ (Nd-LSCO), performed in magnetic fields large enough…

We report transport measurements, including: Hall, Seebeck and Nernst Effect. All these transport properties exhibit anomalous field and temperature dependences, with a change of behavior observed at about H 1.5T and T 15K. We were able to…

强关联电子 · 物理学 2012-05-24 S. Lerer , M. Ben-Shalom , G. Deutscher , Y. Dagan

A bottom-up process has been used to engineer the LaAlO3/SrTiO3 interface atomic composition and locally confine the two-dimensional electron gas to lateral sizes in the order of 100 nm. This is achieved by using SrTiO3(001) substrate…

材料科学 · 物理学 2015-06-18 M. Foerster , R. Bachelet , V. Laukhin , J. Fontcuberta , G. Herranz , F. Sanchez

We report on the transport properties of hybrid devices obtained by depositing graphene on a LaAlO3/SrTiO3 oxide junction hosting a 4 nm-deep two-dimensional electron system. At low graphene-oxide inter-layer bias the two electron systems…

介观与纳米尺度物理 · 物理学 2016-07-14 I. Aliaj , I. Torre , V. Miseikis , E. di Gennaro , A. Sambri , A. Gamucci , C. Coletti , F. Beltram , F. M. Granozio , M. Polini , V. Pellegrini , S. Roddaro

The two-dimensional electron gas (2DEG) at the non-isostructural interface between spinel gamma-Al2O3 and perovskite SrTiO3 is featured by a record electron mobility among complex oxide interfaces in addition to a high carrier density up to…

材料科学 · 物理学 2017-08-02 W. Niu , Y. L. Gan , Y. Zhang , D. V. Christensen , M. von Soosten , X. F. Wang , Y. B. Xu , R. Zhang , N. Pryds , Y. Z. Chen

The two-dimensional electron gas occurring between the band insulators SrTiO$_3$ and LaAlO$_3$ continues to attract considerable interest, due to the possibility of dynamic control over the carrier density, and the ensuing phenomena such as…

材料科学 · 物理学 2017-12-13 A. J. H. van der Torren , Z. Liao , C. Xu , N. Gauquelin , C. Yin , J. Aarts , S. J. van der Molen

The concept of duality has proved extremely powerful in extending our understanding in many areas of physics (1, 2). Charge-vortex duality has been proposed (3, 4) as a model to understand the superconductor to insulator transition (SIT) in…

超导电性 · 物理学 2012-07-31 Manan Mehta , D. A. Dikin , C. W. Bark , S. Ryu , C. M. Folkman , C. B. Eom , V. Chandrasekhar

The quasi two-dimensional electron gas (q-2DEG) at oxide interfaces provides a platform for investigating quantum phenomena in strongly correlated electronic systems. Here, we study the transport properties at the high-mobility…

We have studied the transport properties of LaTiO3/SrTiO3 (LTO/STO) heterostructures. In spite of 2D growth observed in reflection high energy electron diffraction, Transmission Electron Microscopy images revealed that the samples tend to…

介观与纳米尺度物理 · 物理学 2020-12-30 N. Lebedev , M. Stehno , A. Rana , N. Gauquelin , J. Verbeeck , A. Brinkman , J. Aarts

Conventional two-dimensional electron gases are realized by engineering the interfaces between semiconducting compounds. In 2004, Ohtomo and Hwang discovered that an electron gas can be also realized at the interface between large gap…

We calculate the mobility of a two-dimensional electron gas residing at the interface of LaAlO$_{3}$/SrTiO$_{3}$ following a three band Boltzmann approach at low temperature, where carrier-charged impurity scattering process is assumed to…

介观与纳米尺度物理 · 物理学 2016-06-22 A. Faridi , R. Asgari , A. Langari