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Using dynamical mean-field theory and the non-crossing approximation as impurity solver, we study the response of a Mott insulator to strong dc electric fields. The breakdown of the Mott insulating state is triggered by field-induced…

强关联电子 · 物理学 2013-07-01 Martin Eckstein , Philipp Werner

We use time- and energy-resolved optical spectroscopy to investigate the coupling of electron-hole excitations to the magnetic environment in the relativistic Mott insulator Na$_2$IrO$_3$. We show that, on the picosecond timescale, the…

We study the influence of the pulse energy and fluence on the thermalization of photo-doped Mott insulators. If the Mott gap is smaller than the width of the Hubbard bands, the kinetic energy of individual carriers can be large enough to…

强关联电子 · 物理学 2014-12-09 Philipp Werner , Karsten Held , Martin Eckstein

High-harmonic generation (HHG) in strongly correlated Mott insulators is investigated using exact diagonalization and time-dependent density-matrix propagation of a laser-driven one-dimensional Hubbard chain. By projecting onto equilibrium…

光学 · 物理学 2026-05-05 Tao-Yuan Du , Hui-Ru Li , Bo Li , Ruifeng Lu

Electron-phonon-driven charge density waves can in some circumstances allow electronic correlations to become predominant, driving a system into a Mott insulating state. New insights into both the Mott state and preceding charge density…

强关联电子 · 物理学 2021-03-31 C. J. Butler , M. Yoshida , T. Hanaguri , Y. Iwasa

The Mott insulator is the quintessential strongly correlated electronic state. We obtain complete insight into the physics of the two-dimensional Mott insulator by extending the slave-fermion (holon-doublon) description to finite…

We study the photoinduced breakdown of a two-orbital Mott insulator and resulting metallic state. Using time-dependent density matrix renormalization group, we scrutinize the real-time dynamics of the half-filled two-orbital Hubbard model…

强关联电子 · 物理学 2018-06-07 Julian Rincon , Elbio Dagotto , Adrian E. Feiguin

We study the effects of an orbital magnetic field on the Mott metal-insulator transition in the Hubbard-Hofstadter model. We demonstrate that sufficiently large magnetic fields induce a Mott insulator-to-metal phase transition supporting…

强关联电子 · 物理学 2025-10-28 Georg Rohringer , Anton A. Markov

The photo-induced metal-insulator transition is studied by the numerical simulation of real-time quantum dynamics of a double-exchange model. The spatial and temporal evolutions of the system during the transition have been revealed…

强关联电子 · 物理学 2015-05-19 W. Koshibae , N. Furukawa , N. Nagaosa

We study the real-time dynamics of a pair hole/doubly-occupied-site, namely a holon and a doublon, in a 1D Hubbard insulator with on-site and nearest-neighbor Coulomb repulsion. Our analysis shows that the pair is long-lived and the…

强关联电子 · 物理学 2009-11-13 K. A. Al-Hassanieh , F. A. Reboredo , A. E. Feiguin , I. Gonzalez , E. Dagotto

The competition between electron localization and de-localization in Mott insulators underpins the physics of strongly-correlated electron systems. Photo-excitation, which re-distributes charge between sites, can control this many-body…

We address how the nature of linearly dispersing edge states of two dimensional (2D) topological insulators evolves with increasing electron-electron correlation engendered by a Hubbard like on-site repulsion $U$ in finite ribbons of two…

强关联电子 · 物理学 2012-06-26 Amal Medhi , Vijay B. Shenoy , H. R. Krishnamurthy

Correlated electrons in a binary alloy $A_{x}B_{1-x}$ are investigated within the Hubbard model and dynamical mean--field theory (DMFT). The random energies $\epsilon_{i}$ have a bimodal probability distribution and an energy separation…

强关联电子 · 物理学 2009-11-10 Krzysztof Byczuk , Walter Hofstetter , Dieter Vollhardt

We study the double occupancy in a fermionic Mott insulator at half-filling generated via a dynamical periodic modulation of the hopping amplitude. Tuning the modulation amplitude, we describe a crossover in the nature of doublon-holon…

量子气体 · 物理学 2010-06-02 Fabian Hassler , Andreas Rüegg , Manfred Sigrist , Gianni Blatter

We consider Mott insulators driven by periodic coherent laser radiation, using both single orbital and multi-orbital models, noting that the latter is of more interest in solid state systems. We derive general expressions for the resulting…

强关联电子 · 物理学 2019-05-15 Kasra Hejazi , Jianpeng Liu , Leon Balents

Motivated by recent experiments on Mott insulators, in both iridates and ultracold atoms, we theoretically study the effects of magnetic order on the Mott-Hubbard excitons. In particular, we focus on spin-mediated doublon-holon pairing in…

强关联电子 · 物理学 2024-04-23 T. -S. Huang , C. L. Baldwin , M. Hafezi , V. Galitski

We investigate the metal-to-insulator phase transition driven by the density-density electronic interaction in the quarter-filled model on a cubic lattice with two orbitals split by a crystal field. We show that a systematic consideration…

强关联电子 · 物理学 2023-05-30 M. Vandelli , J. Kaufmann , V. Harkov , A. I. Lichtenstein , K. Held , E. A. Stepanov

In this work we investigate charge transport in one-dimensional (1D) insulators via semi-classical and perturbative renormalization group (RG) methods. We consider the problem of electron-electron, electron-phonon and electron-two-level…

强关联电子 · 物理学 2009-11-07 Chun-Min Chang , A. H. Castro Neto , A. R. Bishop

An intuitive interpretation of the relationship between the dispersion relation of the single-particle excitation in a metal and that of the spin excitation in a Mott insulator is presented, based on the results for the one- and…

强关联电子 · 物理学 2014-07-14 Masanori Kohno

The use of intense tailored light fields is the perfect tool to achieve ultrafast control of electronic properties in quantum materials. Among them, Mott insulators are materials in which strong electron-electron interactions drive the…

强关联电子 · 物理学 2023-02-07 Eduardo B. Molinero , Rui E. F. Silva
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