相关论文: Linear scaling between momentum and spin scatterin…
The exceptionally high mobility of carriers in graphene is one of its defining characteristics, especially in view of potential applications. Therefore it is of both practical and fundamental importance to understand the mechanisms…
The demand for compact, high-speed and energy-saving circuitry urges higher efficiency of spintronic devices that can offer a viable alternative for the current electronics. The route towards this goal suggests implementing two-dimensional…
Particular strain geometry in graphene could leads to a uniform pseudo-magnetic field of order 10T and might open up interesting applications in graphene nano-electronics. Through quantum transport calculations of realistic strained…
Graphene, with spin and valley degrees of freedom, fosters unexpected physical and chemical properties for the realization of next-generation quantum devices. However, the spin symmetry of graphene is rather robustly protected, hampering…
Graphene is a promising platform for spin-based non-volatile memory, logic, and neuromorphic computing by combining long-distance spin transport with electrical tunability at room temperature. However, advancing beyond passive spin channels…
Using four-terminal nonlocal magnetoresistance measurements in lateral spin-valve devices with Si$_{\rm 0.1}$Ge$_{\rm 0.9}$, we study pure spin current transport in a degenerate SiGe alloy ($n \sim$ 5.0 $\times$ 10$^{18}$ cm$^{-3}$). Clear…
Based on a Monte Carlo method, we investigate the influence of transport conditions on the electron spin relaxation in GaAs. The decay of initial electron spin polarization is calculated as a function of distance under the presence of…
We analyze the scattering from one-dimensional defects in intrinsic graphene. The Coulomb repulsion between electrons is found to be able to induce singularities of such scattering at zero temperature as in one-dimensional conductors. In…
The technique of propagating spin wave spectroscopy is applied to a 20 nm thick Fe/MgO (001) film. The magnetic parameters extracted from the position of the resonance peaks are very close to those tabulated for bulk iron. From the…
Spin precession has been used to measure the transmission time \tau over a distance L in a graphene sheet. Since conduction electrons in graphene have an energy-independent velocity v, one would expect \tau > L/v. Here we calculate that…
A one dimensional theory of lateral spin-polarized transport is derived from the two dimensional flow in the vertical cross section of a stack of ferromagnetic and paramagnetic layers. This takes into account the influence of the lead on…
The development of a spintronics device relies on efficient generation of spin polarized currents and their electric field controlled manipulation. While observation of exceptionally long spin relaxation lengths make graphene an intriguing…
The temperature dependence of the spin diffusion length typically reflects the scattering mechanism responsible for spin relaxation. Within non-magnetic metals it is reasonable to expect the Elliot-Yafet mechanism to play a role and thus…
We study the generation of non-equilibrium spin currents in systems with spatially-inhomogeneous magnetic potentials. For sufficiently high current densities, the spin polarization can be transported over distances significantly exceeding…
We review our recent work on the physical mechanisms limiting the mobility of graphene on SiO2. We have used intentional addition of charged scattering impurities and systematic variation of the dielectric environment to differentiate the…
Using the recently developed technique of microsoldering, we perform a systematic transport study of the influence of PMMA on graphene flakes revealing a doping effect of up to 3.8x10^12 1/cm^2, but a negligible influence on mobility and…
This letter reports the impact of surface morphology on the carrier transport and RF performance of graphene FETs formed on epitaxial graphene films synthesized on SiC substrates. Such graphene exhibits long terrace structures with widths…
Modifying the hexagonal lattices of graphene enables the repositioning and merging of the Dirac cones which proves to be a key element in the use of these materials for alternative electronic applications such as valleytronics. Here we…
We provide a theoretical description of diffusive charge and spin transport in hybrid devices containing altermagnets. Based on recently derived drift--diffusion equations for coupled charge and spin dynamics and general boundary…
We investigate the spin Hall effect in a single-layer graphene device with disorder and interface-induced spin-orbit coupling. Our graphene device is connected to four semi-infinite leads that are embedded in a {Landauer-B\"uttiker} setup…