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相关论文: The nature of localization in graphene under quant…

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Graphene is a unique two-dimensional material with rich new physics and great promise for applications in electronic devices. Physical phenomena such as the half-integer quantum Hall effect and high carrier mobility are critically dependent…

The wave nature of electrons in low-dimensional structures manifests itself in conventional electrical measurements as a quantum correction to the classical conductance. This correction comes from the interference of scattered electrons…

介观与纳米尺度物理 · 物理学 2009-03-27 F. V. Tikhonenko , A. A. Kozikov , A. K. Savchenko , R. V. Gorbachev

When electrons are confined in two dimensions and subjected to strong magnetic fields, the Coulomb interactions between them become dominant and can lead to novel states of matter such as fractional quantum Hall liquids. In these liquids…

介观与纳米尺度物理 · 物理学 2015-05-14 Kirill I. Bolotin , Fereshte Ghahari , Michael D. Shulman , Horst L. Stormer , Philip Kim

The quantum Hall effect arises from the interplay between localized and extended states that form when electrons, confined to two dimensions, are subject to a perpendicular magnetic field. The effect involves exact quantization of all the…

介观与纳米尺度物理 · 物理学 2009-11-10 S. Ilani , J. Martin , E. Teitelbaum , J. H. Smet , D. Mahalu , V. Umansky , A. Yacoby

The quantum Hall effect hosts quantum phase transitions in which the localization length, that is the size of disorder-induced bulk localized states, is governed by universal scaling from percolation theory. However, this universal…

We show that the manifestation of quantum interference in graphene is very different from that in conventional two-dimensional systems. Due to the chiral nature of charge carriers, it is sensitive not only to inelastic, phase-breaking…

介观与纳米尺度物理 · 物理学 2008-02-09 F. V. Tikhonenko , D. W. Horsell , R. V. Gorbachev , A. K. Savchenko

The observed quantization of the Hall conductivity in graphene at high magnetic fields is explained as being due to the dynamically generated spatial modulation of either the electron spin or the density, as decided by the details of…

介观与纳米尺度物理 · 物理学 2007-05-23 Igor F. Herbut

Using high quality graphene pnp junctions, we observe prominent conductance fluctuations on transitions between quantum Hall (QH) plateaus as the top gate voltage Vtg is varied. In the Vtg-B plane, the fluctuations form crisscrossing lines…

介观与纳米尺度物理 · 物理学 2015-05-14 Jairo Velasco , Gang Liu , Lei Jing , Philip Kratz , Wenzhong Bao , Marc Bockrath , Chun Ning Lau

Using the tight-binding model, we investigate the influence of vacancy disorder on electrical transport in graphene Hall bars in the presence of quantizing magnetic fields. Disorder, induced by a random distribution of monovacancies, breaks…

介观与纳米尺度物理 · 物理学 2016-12-21 M. D. Petrović , F. M. Peeters

The quantum Hall effect is a remarkable manifestation of quantized transport in a two-dimensional electron gas. Given its technological relevance, it is important to understand its development in realistic nanoscale devices. In this work we…

介观与纳米尺度物理 · 物理学 2013-01-08 I. J. Vera-Marun , P. J. Zomer , A. Veligura , M. H. D. Guimarães , L. Visser , N. Tombros , H. J. van Elferen , U. Zeitler , B. J. van Wees

Graphene enables precise carrier-density control via gating, making it an ideal platform for studying electronic interactions. However, sample inhomogeneities often limit access to the low-density regimes where these interactions dominate.…

We study interaction-induced localization of electrons in an inhomogeneous quasi-one-dimensional system--a wire with two regions, one at low density and the other high. Quantum Monte Carlo techniques are used to treat the strong Coulomb…

介观与纳米尺度物理 · 物理学 2011-09-02 A. D. Guclu , C. J. Umrigar , Hong Jiang , H. U. Baranger

The fractional quantum Hall effect is a very particular manifestation of electronic correlations in two-dimensional systems in a strong perpendicular magnetic field. It arises as a consequence of a strong Coulomb repulsion between electrons…

介观与纳米尺度物理 · 物理学 2022-07-08 Mark O. Goerbig

We suggest a simple model of disorder in graphene assuming that there are randomly distributed positive and negative centers with equal concentration $N/2$ in the bulk of silicon oxide substrate. We show that at zero gate voltage such…

介观与纳米尺度物理 · 物理学 2009-11-13 B. I. Shklovskii

We consider the combined influence of disorder, electron-electron interactions and quantum hopping on the properties of electronic systems in a localized phase, approaching an insulator-metal transition. The generic models in this regime…

无序系统与神经网络 · 物理学 2018-07-11 Thomas Vojta , Michael Schreiber

Recent experimental work on locally gated graphene layers resulting in p-n junctions have revealed quantum Hall effect in their transport behavior. We explain the observed conductance quantization which is fractional in the bipolar regime…

介观与纳米尺度物理 · 物理学 2007-08-07 D. A. Abanin , L. S. Levitov

Probing techniques with spatial resolution have the potential to lead to a better understanding of the microscopic physical processes and to novel routes for manipulating nanostructures. We present scanning-gate images of a graphene quantum…

介观与纳米尺度物理 · 物理学 2012-06-13 S. Schnez , J. Güttinger , M. Huefner , C. Stampfer , K. Ensslin , T. Ihn

Recent successes in manufacturing of atomically thin graphite samples (graphene) have stimulated intense experimental and theoretical activity. The key feature of graphene is the massless Dirac type of low-energy electron excitations. This…

介观与纳米尺度物理 · 物理学 2008-05-23 P. M. Ostrovsky , I. V. Gornyi , A. D. Mirlin

An efficient computational methodology is used to explore charge transport properties in chemically-modified (and randomly disordered) graphene-based materials. The Hamiltonians of various complex forms of graphene are constructed using…

介观与纳米尺度物理 · 物理学 2011-12-16 Nicolas Leconte , Aurélien Lherbier , François Varchon , Pablo Ordejon , Stephan Roche , Jean-Christophe Charlier

We predict the existence of an intriguing "disorder by order" phenomenon in graphene transport where higher quality (and thus more ordered) samples, while having higher mobility at high carrier density, will manifest more strongly…

介观与纳米尺度物理 · 物理学 2012-05-25 S. Das Sarma , E. H. Hwang , Qiuzi Li
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