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相关论文: Interface reconstruction in V-oxide heterostructur…

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We present an ab initio study of the (001) interfaces between two insulating perovskites, the polar LaAlO3 and the nonpolar SrTiO3. We observe an insulating-to-metallic transition above a critical LaAlO3 thickness. We explain that the high…

材料科学 · 物理学 2009-11-13 Hanghui Chen , Alexie M. Kolpak , Sohrab Ismail-Beigi

The structural and electronic properties of the LaAlO3/Si(001) interface are determined using state-of-the-art electronic structure calculations. The atomic structure differs from previous proposals, but is reminiscent of La adsorption…

材料科学 · 物理学 2016-08-31 Clemens J. Foerst , Karlheinz Schwarz , Peter E. Bloechl

Emergent phases in the two-dimensional electron gas (2DEG) formed at the interface between two insulating oxides have attracted great attention in the past decade. We present ab-initio electronic structure calculations for the interface…

材料科学 · 物理学 2015-12-24 Hrishit Banerjee , Sumilan Banerjee , Mohit Randeria , Tanusri Saha-Dasgupta

A combined experimental and theoretical investigation of the electronic structure of the archetypal oxide heterointerface system LaAlO3 on SrTiO3 is presented. High-resolution, hard x-ray photoemission is used to uncover the occupation of…

$SrVO_3$ (SVO), a model correlated metal and a promising transparent conducting oxide, develops a several-nanometer-thick near-surface region (NSR), rich in $V^{5+}$ species under ambient conditions. This oxidized layer obscures the…

In semiconducting materials, electrostatic gating and light illumination are widely used stimuli to tune the electronic properties of the system. Here, we show a significant enhancement of photoresponse at the conducting interface of…

We report on surface effects on the electronic properties of interfaces in epitaxial LaAlO$_3$/SrTiO$_3$ heterostructures. Our results are based on first-principles electronic structure calculations for well-relaxed multilayer…

材料科学 · 物理学 2009-11-13 U. Schwingenschloegl , C. Schuster

For multilayered materials, reflectivity depends on the complex dielectric function of all the constituent layers, and a detailed analysis is required to separate them. Furthermore, for some cases, new quantum states can occur at the…

强关联电子 · 物理学 2015-01-05 Teguh Citra Asmara , Iman Santoso , Andrivo Rusydi

The conducting quasi-two dimensional electron system (q2DES) formed at the interface between LaAlO3 and SrTiO3 band insulators is confronting the condensed matter physics community with new paradigms. While the mechanism for the formation…

材料科学 · 物理学 2014-09-11 M. Salluzzo

The heterostructure consisting of the Mott insulator LaVO$_3$ and the band insulator SrTiO$_3$ is considered a promising candidate for future photovoltaic applications. Not only does the (direct) excitation gap of LaVO$_3$ match well the…

The diverse functionality emerging at oxide interfaces calls for a fundamental understanding of the mechanisms and control parameters of electronic reconstructions. Here, we explore the evolution of electronic phases in…

强关联电子 · 物理学 2015-01-19 David Doennig , Rossitza Pentcheva

Advances in synthesis techniques and materials understanding have given rise to oxide heterostructures with intriguing physical phenomena that cannot be found in their constituents. In these structures, precise control of interface quality,…

In this paper we use density functional theory combined with dynamical mean-field theory (DFT+DMFT) to study interface effects between thin films of the correlated metal CaVO$_3$ and the two typical substrate materials SrTiO$_3$ and…

强关联电子 · 物理学 2021-01-04 Sophie Beck , Claude Ederer

In oxide heterostructures, different materials are integrated into a single artificial crystal, resulting in a breaking of inversion-symmetry across the heterointerfaces. A notable example is the interface between polar and non-polar…

Key technologies in energy conversion and storage, sensing and chemical synthesis rely on a detailed knowledge about charge transfer processes at electrified solid-liquid interfaces. However, these interfaces continuously evolve as a…

材料科学 · 物理学 2022-12-12 Reshma R. Rao , Iris C. G. van den Bosch , Christoph Baeumer

The discovery that the interface between two band gap insulators LaAlO3 and SrTiO3 is highly conducting has raised an enormous interest in the field of oxide electronics. The LAlO3/SrTiO3 interface can be tuned using an electric field and…

We report combined experimental and first principles investigations of hydrogen absorption in epitaxial vanadium films on MgO(001) with nominal thicknesses of 10 nm and 50 nm. In - situ optical transmission and four - probe resistance…

材料科学 · 物理学 2025-11-11 Qiuxiang Zhang , Yan Zhu , Xiaofang Peng , Weiguang Yang , Yuping Le , Xiao Xin

The high-mobility conducting interface (CI) between LaAlO_{3}(LAO) and SrTiO_{3}(STO) has revealed many fascinating phenomena, including exotic magnetism and superconductivity. But, the formation mechanism of the CI has not been…

Layer-by-layer oxide molecular beam epitaxy has been used to synthesize cuprate-nickelate multilayer structures of composition (La$_2$CuO$_4$)$_m$/LaO/(LaNiO$_3$)$_n$. In a combined experimental and theoretical study, we show that these…

The metallic interface between two oxide insulators, such as LaAlO3/SrTiO3 (LAO/STO), provides new opportunities for electronics and spintronics. However, due to the presence of multiple orbital populations, tailoring the interfacial…