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We report on the fabrication and transport studies of a single-layer graphene p-n junction. Carrier type and density in two adjacent regions are individually controlled by electrostatic gating using a local top gate and a global back gate.…

介观与纳米尺度物理 · 物理学 2007-08-28 J. R. Williams , L. DiCarlo , C. M. Marcus

We have developed a device fabrication process to pattern graphene into nanostructures of arbitrary shape and control their electronic properties using local electrostatic gates. Electronic transport measurements have been used to…

介观与纳米尺度物理 · 物理学 2008-04-14 Barbaros Özyilmaz , Pablo Jarillo-Herrero , Dmitri Efetov , Dmitri A. Abanin , Leonid S. Levitov , Philip Kim

Electrons in graphene follow unconventional trajectories at PN junctions, driven by their pseudospintronic degree of freedom. Significant is the prominent angular dependence of transmission, capturing the chiral nature of the electrons and…

介观与纳米尺度物理 · 物理学 2013-05-30 Redwan N. Sajjad , S. Sutar , J. U. Lee , Avik W. Ghosh

We propose the theory of transport in a gate-tunable graphene p-n junction, in which the gradient of the carrier density is controlled by the gate voltage. Depending on this gradient and on the density of charged impurities, the junction…

介观与纳米尺度物理 · 物理学 2008-02-21 M. M. Fogler , L. I. Glazman , D. S. Novikov , B. I. Shklovskii

We fabricate and investigate high quality graphene devices with contactless, suspended top gates, and demonstrate formation of graphene pnp junctions with tunable polarity and doping levels. The device resistance displays distinct…

介观与纳米尺度物理 · 物理学 2011-08-12 Jairo Velasco , Gang Liu , Wenzhong Bao , Chun Ning Lau

We investigate electronic transport through a graphene $n$-$p$ junction in the quantum Hall effect regime at high perpendicular magnetic field, when the filling factors in the $n$-doped and $p$-doped regions are fixed to 2 and -2…

介观与纳米尺度物理 · 物理学 2018-07-30 Qianfan Ma , François D. Parmentier , Preden Roulleau , Geneviève Fleury

The quantum Hall effect in graphene p-n junctions is studied numerically with emphasis on the effect of disorder at the interface of two adjacent regions. Conductance plateaus are found to be attached to the intensity of the disorder, and…

介观与纳米尺度物理 · 物理学 2009-04-06 Jian Li , Shun-Qing Shen

The Hall effect, and the diagonal resistance, which indicates a residual resistivity $\rho_{xx} \approx h/4e^{2}$, are experimentally examined over the p$\leftrightarrow$n transition about the nominal neutrality point in chemical vapor…

介观与纳米尺度物理 · 物理学 2016-02-17 Ramesh G. Mani

Using a semi-classical approach and input from experiments on the conductivity of graphene, we determine the electronic density dependence of the electronic transport coefficients -- conductivity, thermal conductivity and thermopower -- of…

介观与纳米尺度物理 · 物理学 2009-11-13 N. M. R. Peres , J. M. B. Lopes dos Santos , T. Stauber

We investigate an effective model of proximity modified graphene (or symmetrylike materials) with broken time-reversal symmetry. We predict the appearance of quantum anomalous Hall phases by computing bulk band gap and Chern numbers for…

介观与纳米尺度物理 · 物理学 2020-04-07 Petra Högl , Tobias Frank , Klaus Zollner , Denis Kochan , Martin Gmitra , Jaroslav Fabian

We study quasi-particle transmission through an $n $-$p$ junction in a graphene irradiated by an electromagnetic field (EF). In the absence of EF the electronic spectrum of undoped graphene is gapless, and one may expect the perfect…

介观与纳米尺度物理 · 物理学 2009-11-13 M. V. Fistul , K. B. Efetov

When a graphene layer is stressed, the strain alters the phase an electron accumulates hopping between sites in a way that can be modeled as arising from a pseudo-magnetic vector potential. We examine the case of an oscillating graphene…

介观与纳米尺度物理 · 物理学 2017-11-02 Anita Bhagat , Kieran Mullen

The quantum Hall effect is a remarkable manifestation of quantized transport in a two-dimensional electron gas. Given its technological relevance, it is important to understand its development in realistic nanoscale devices. In this work we…

介观与纳米尺度物理 · 物理学 2013-01-08 I. J. Vera-Marun , P. J. Zomer , A. Veligura , M. H. D. Guimarães , L. Visser , N. Tombros , H. J. van Elferen , U. Zeitler , B. J. van Wees

We provide a semiclassical description of the electronic transport through graphene n-p junctions in the quantum Hall regime. A semiclassical approximation for the conductance is derived in terms of the various snake-like trajectories at…

介观与纳米尺度物理 · 物理学 2010-06-21 Pierre Carmier , Caio Lewenkopf , Denis Ullmo

Local curvature, or bending, of a graphene sheet is known to increase the chemical reactivity presenting an opportunity for templated chemical functionalization. Using first principles calculations based on density functional theory (DFT)…

材料科学 · 物理学 2015-08-12 Jesper Toft Rasmussen , Tue Gunst , Peter Bøggild , Antti-Pekka Jauho , Mads Brandbyge

Among many remarkable qualities of graphene, its electronic properties attract particular interest due to a massless chiral character of charge carriers, which leads to such unusual phenomena as metallic conductivity in the limit of no…

介观与纳米尺度物理 · 物理学 2011-04-07 F. Guinea , M. I. Katsnelson , A. K. Geim

Recent experimental work on locally gated graphene layers resulting in p-n junctions have revealed quantum Hall effect in their transport behavior. We explain the observed conductance quantization which is fractional in the bipolar regime…

介观与纳米尺度物理 · 物理学 2007-08-07 D. A. Abanin , L. S. Levitov

A stochastic nonlinear electrical characteristic of graphene is reported. Abrupt current changes are observed from voltage sweeps between the source and drain with an on/off ratio up to 10^(3). It is found that graphene channel experience…

The peculiar nature of electron scattering in graphene is among many exciting theoretical predictions for the physical properties of this material. To investigate electron scattering properties in a graphene plane, we have created a…

介观与纳米尺度物理 · 物理学 2007-06-19 B. Huard , J. A. Sulpizio , N. Stander , K. Todd , B. Yang , D. Goldhaber-Gordon

We model the quantum Hall effect in heterostructures made of two gapped graphene stripes with different gaps, $\Delta_1$ and $\Delta_2$. We consider two main situations, $\Delta_1=0,\Delta_2\neq0$ and $\Delta_1=-\Delta_2$. They are…

介观与纳米尺度物理 · 物理学 2013-08-01 J. L. Lado , J. W. González , J. Fernández-Rossier
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