相关论文: Thermopower-enhanced efficiency of Si/SiGe ballist…
The control of thermal fluxes -- magnitude and direction, in mesoscale and nanoscale electronic circuits can be achieved by means of heat rectification using thermal diodes in two-terminal systems. The rectification coefficient…
To encode quantum information in semiconductor spin qubits, voltage pulses are necessary for initialization, gate operation, and readout. However, these pulses dissipate heat, shifting spin-qubit frequencies and reducing gate fidelities.…
We measure gate-tuned thermoelectric power of mechanically exfoliated Bi2Se3 thin films in the topological insulator regime. The sign of the thermoelectric power changes across the charge neutrality point as the majority carrier type…
We investigate the thermoelectric properties of a quantum dot coupled to ferromagnetic and superconducting electrodes. The combination of spin polarized tunneling at the ferromagnetic-quantum dot interface and the application of an external…
Thermoelectric devices at the nanoscale offer promising routes for on-chip refrigeration and waste-heat recovery, yet most semiconductor-based implementations suffer from limited tunability and narrow operational ranges. We introduce a…
We investigate the effect of electrostatic gating on the thermoelectric power factor of p-type Si nanowires (NWs) of up to 20nm in diameter in the [100], [110] and [111] crystallographic transport orientations. We use atomistic…
We study the thermoelectric properties of rectangular graphene rings connected symmetrically or asymmetrically to the leads. A side-gate voltage applied across the ring allows for the precise control of the electric current flowing through…
Heat flow control is essential for widespread applications of heating, cooling, energy conversion and utilization. Here we demonstrate the first observation of temperature-gated thermal rectification in vanadium dioxide beams, in which an…
Using a one-dimensional tight-binding Anderson model, we study a disordered nanowire in the presence of an external gate which can be used for depleting its carrier density (field effect transistor device configuration). In this first…
The thermoelectric properties of the surface states in three-dimensional topological insulator nanowires are studied. The Seebeck coefficients $S_c$ and the dimensionless thermoelectrical figure of merit $ZT$ are obtained by using the…
The thermal boundary resistance of Si/Ge interfaces as been determined using approach-to-equilibrium molecular dynamics simulations. Assuming a reciprocal linear dependence of the thermal boundary resistance, a length-independent bulk…
The enhanced thermopower of the correlated semiconductor FeSi is found to be robust against the sign of the relevant charge carriers. At $T$\,$\approx$\,70 K, the position of both the high-temperature shoulder of the thermopower peak and…
We derive formal expressions of time-dependent energy and heat currents through a nanoscopic device using the Keldysh nonequilibrium Green function technique. Numerical results are reported for a metal/dot/metal junction where the dot level…
The response of electric devices to an applied thermal gradient has, so far, been studied almost exclusively in two-terminal devices. Here we present measurements of the response to a thermal bias of a four-terminal, quasi-ballistic…
We study the performance of a three-terminal thermoelectric device such as heat engine and refrigerator with broken time-reversal symmetry by applying the unified trade-off figure of merit ($\dot{\Omega}$ criterion) which accounts for both…
The thermoelectric voltage of a quantum dot connected to leads is calculated using the scattering R-matrix method. Our approach takes into account a temperature gradient between the contacts beyond the linear regime. We obtain sign changes…
Direct thermal-to-electric energy converters typically operate in the linear regime, where the ratio of actual maximum power relative to the ideal maximum power, the so-called fill factor (FF), is 0.25. By increasing the FF one can…
Two different kinds of metal transition oxides have been studied for their large thermopower values. The first one corresponds to the Tl-based misfit cobaltite which is a hole-doped metal. We demonstrate that the partial Bi-substitution for…
Recent experiments on symmetry-broken mesoscopic semiconductor structures have exhibited an amazing rectifying effect in the transverse current-voltage characteristics with promising prospects for future applications. We present a simple…
A particularly promising pathway to enhance the efficiency of thermoelectric materials lies in the use of resonant states, as suggested by experimentalists and theorists alike. In this paper, we go over the mechanisms used in the literature…