相关论文: Self-consistent Wigner distribution function study…
A self-consistent method for calculating electron transport through a molecular device is proposed. It is based on density functional theory electronic structure calculations under periodic boundary conditions and implemented in the…
A theory of spin-dependent electron transmission through resonant tunneling diode (RTD) grown of non-centrosymmetrical semiconductor compounds has been presented. It has been shown that RTD can be employed for injection and detection of…
The influence of the charging effects on the transport characteristics of a molecular wire bridging two metallic electrodes in the limit of weak contacts is studied by generalized Breit-Wigner formula. Molecule is modeled as a quantum dot…
We develop a device model for p-i-n tunneling transit-time diodes based on single- and multiple graphene layer structures operating at the reverse bias voltages. The model of the graphene tunneling transit-time diode (GTUNNETT) accounts for…
Low temperature scanning tunneling microscope images and spectroscopic data have been obtained on subnanometer size Pb clusters fabricated using the technique of buffer layer assisted growth. Discrete energy levels were resolved in…
We investigate the transport and coherence properties of a double quantum dot coupled to a single damped boson mode. Our numerically results reveal how the properties of the boson distribution can be steered by altering parameters of the…
Advances in fabrication and control of quantum dots allow the realization of metastructures that may exhibit novel electrical transport phenomena. Here, we investigate the electrical current passing through one such metastructure, a system…
We use Density Functional Theory to study interacting spinless electrons on a one-dimensional quantum ring in the density range where the system undergoes Wigner crystallization. The Wigner transition leads to a drastic ``collective''…
We devise a scheme to characterize tunneling of an excess electron shared by a pair of tunnel-coupled dangling bonds on a silicon surface -- effectively a two-level system. Theoretical estimates show that the tunneling should be highly…
Electric-field-controlled charge transport is a key concept of modern computers, embodied namely in field effect transistors. The metallic gate voltage controls charge population, thus it is possible to define logical elements which are the…
Transmission of electrons across a rectangular barrier of IV-VI semiconductor compounds is considered. Conduction electrons arrive at the barrier and are reflected or transmitted through it depending on the relative values of the barrier…
The transport of atoms is experimentally studied in a transistor-like triple-well potential consisting of a narrow gate well surrounded by source and drain wells. Atoms are initially loaded into the source well with pre-determined…
Transient tunneling effects in triple barrier systems are investigated by considering a time-dependent solution to the Schr\"{o}dinger equation with a cutoff wave initial condition. We derive a two-level formula for incidence energies $E$…
Using the effective mass model for an electron and the dielectric continuum model, analytical solutions of the self-consistent Schr\"odinger-Poisson system of equations are obtained. Quantum mechanical theory of electronic stationary…
Self-consistent calculations of acoustic and polar optical phonon scattering rates in GaAs quantum wire transistor structures were carried out with account of collisional broadening. The influence of the gate bias on the scattering rates…
The dynamics of electronic tunneling through a disordered 1D chain of finite length is considered. We calculate distributions of the transmission coefficient T, Wigner delay time and, $\tau_\phi$ and the transport time, $\tau_t=T\tau_\phi$.…
Strongly correlated transport of interacting electrons through the one-dimensional tunnel contact is considered within the Luttinger liquid model of one-dimensional electrodes on arbitrary time scales $ t> \hbar /\Lambda_{g} $. Using…
We study electron transport through a triple quantum dot in ring configuration at finite bias. In particular, we analyze the influence of a gate voltage that detunes one of the dots, such that one branch of the interferometer becomes…
A quantum statistical theory of spin-dependent tunneling through asymmetric magnetic double barrier junctions is presented which describes $both$ ballistic and diffuse tunneling by a single analytical expression. It is evidenced that the…
Theoretical studies of the tunnelling current and emission spectrum of a single electron transistor (SET) under optical pumping are presented. The calculation is performed via Keldysh Green's function method within the Anderson model with…