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A spin- and time-dependent electron transport has been studied in a paramagnetic resonant tunneling diode using the self-consistent Wigner-Poisson method. Based on the calculated current-voltage characteristics in an external magnetic field…

介观与纳米尺度物理 · 物理学 2012-10-17 Pawel Wojcik , Janusz Adamowski , Maciej Woloszyn , Bartlomiej J. Spisak

We present studies of ballistic transport in three terminal T-shaped junction in a linear and non-linear regime. The floating electrode acts as a scatterer and modifies the conductance in a direct channel (between source and drain…

介观与纳米尺度物理 · 物理学 2011-12-30 M. Bek , B. R. Bułka , J. Wróbel

The quantum dissipative dynamics of a tunneling process through double barrier structures is investigated on the basis of a rigorous treatment for the first time. We employ a Caldeira-Leggett Hamiltonian with an effective potential…

介观与纳米尺度物理 · 物理学 2013-02-28 Atsunori Sakurai , Yoshitaka Tanimura

The quantum dissipative dynamics of a tunneling process through double barrier structures is investigated on the basis of non-perturbative and non-Markovian treatment. We employ a Caldeira-Leggett Hamiltonian with an effective potential…

介观与纳米尺度物理 · 物理学 2014-01-09 Atsunori Sakurai , Yoshitaka Tanimura

The atomtronic matter-wave triple-well transistor is theoretically predicted to exhibit current gain and act as a coherent matter-wave emitter. In this work, we investigate the dynamics of an atomtronic transistor composed of a triple-well…

A two miniband model for electron transport in semiconductor superlattices that includes scattering and interminiband tunnelling is proposed. The model is formulated in terms of Wigner functions in a basis spanned by Pauli matrices,…

介观与纳米尺度物理 · 物理学 2015-05-19 M. Alvaro , L. L. Bonilla

The fully self-consistent non-equilibrium Green functions (NEGFs) approach to the quantum transport is developed for the investigation of one-dimensional nano-scale devices. Numerical calculations performed for resonant tunneling diodes…

介观与纳米尺度物理 · 物理学 2009-11-11 Van Nam Do , Philippe Dollfus , Van Lien Nguyen

Electron transport in a self-consistent potential along a ballistic two-terminal conductor has been investigated. We have derived general formulas which describe the nonlinear current-voltage characteristics, differential conductance, and…

介观与纳米尺度物理 · 物理学 2007-05-23 O. M. Bulashenko , J. M. Rubi

We study resonant tunnelling through double-barrier structures under an applied bias voltage, in which nonlinearities due to self-interaction of electrons in the barrier regions are included. As an approximation, we concern ourselves with…

凝聚态物理 · 物理学 2009-10-22 Enrique Diez , Francisco Dominguez-Adame , Angel Sánchez

We investigate the formation of the one-dimensional channels on the topological surface under the gate electrode. The energy dispersion of these channels is almost linear in the momentum with the velocity sensitively depending on the…

介观与纳米尺度物理 · 物理学 2015-05-18 Takehito Yokoyama , Alexander V. Balatsky , Naoto Nagaosa

We employ density functional theory to calculate the self consistent electronic structure, free energy and linear source-drain conductance of a lateral semiconductor quantum dot patterned via surface gates on the 2DEG formed at the…

凝聚态物理 · 物理学 2009-10-28 M. Stopa

We examine the Breit-Wigner resonances that ensue from field effects in molecular single electron transistors (SETs). The adiabatic dynamics of a quantum dot elastically attached to electrodes are treated in the Born-Oppenheimer approach.…

介观与纳米尺度物理 · 物理学 2015-06-24 Alexander M. Dykhne , Alexander G. Rudavets

We investigate the current-voltage characteristics of a field-effect tunnelling transistor comprised of both monolayer and bilayer graphene with well-aligned crystallographic axes, separated by three layers of hexagonal boron nitride. Using…

介观与纳米尺度物理 · 物理学 2015-12-10 Thomas L M Lane , John R Wallbank , Vladimir I Fal'ko

We explore electron transport properties in a quantum wire attached to two metallic electrodes. A simple tight-binding model is used to describe the system and the coupling of the wire to the electrodes (source and drain) is treated through…

介观与纳米尺度物理 · 物理学 2010-01-10 Santanu K. Maiti

Recent developments in the technology of van der Waals heterostructures made from two-dimensional atomic crystals have already led to the observation of new physical phenomena, such as the metal-insulator transition and Coulomb drag, and to…

We study the electronic properties of dual-gated electron-hole bilayers in which the two layers are separated by a perfectly opaque tunnel barrier. Combining an electrostatic and thermodynamic analysis with mean-field theory estimates of…

介观与纳米尺度物理 · 物理学 2020-09-09 Yongxin Zeng , A. H. MacDonald

Electron transport properties in nanostructures can be modeled, for example, by using the semiclassical Wigner formalism or the quantum mechanical Green's functions formalism. We compare the performance and the results of these methods in…

介观与纳米尺度物理 · 物理学 2009-11-10 Paula Havu , Noora Tuomisto , Riikka Vaananen , Martti J. Puska , Risto M. Nieminen

The ground state properties of a one-dimensional system with particle-hole symmetry, consisting of a gate controlled dot coupled to an interacting reservoir, are explored using the numerical DMRG method. It was previously shown that the…

强关联电子 · 物理学 2007-05-23 Y. Weiss , M. Goldstein , R. Berkovits

We have fabricated all II-VI semiconductor resonant tunneling diodes based on the (Zn,Mn,Be)Se material system, containing dilute magnetic material in the quantum well, and studied their current-voltage characteristics. When subjected to an…

介观与纳米尺度物理 · 物理学 2009-11-10 A. Slobodskyy , C. Gould , T. Slobodskyy , C. R. Becker , G. Schmidt , L. W. Molenkamp

An insulator-to-metal transition is observed in trilayer graphene based on the temperature dependence of the resistance under different applied gate voltages. At small gate voltages the resistance decreases with increasing temperature due…

介观与纳米尺度物理 · 物理学 2012-08-27 Richard S. Thompson , Yi-Chen Chang , Jia G. Lu
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