相关论文: Excess dissipation in a single-electron box: The S…
We experimentally characterise the impedance of a single electron transistor (SET) at an excitation frequency comparable to the electron tunnel rate. Differently from usual rf-SET operations, the excitation signal is applied to the gate of…
We study admittance and energy dissipation in an out-of-equlibrium single electron box. The system consists of a small metallic island coupled to a massive reservoir via single tunneling junction. The potential of electrons in the island is…
When a quantum electronic device is coupled to an electrical resonator, admittance changes of the quantum subsystem may be detected. The effective reactance may include capacitive and inductive terms that incorporate geometric, quantum, and…
We discuss a simple but experimentally realistic model system, a single-electron box (SEB), where common fluctuation relations can be tested for driven electronic transitions. We show analytically that when the electron system on the SEB…
We demonstrate continuous Sisyphus cooling combined with a continuous loading mechanism used to efficiently slow down and accumulate atoms from a guided beam. While the loading itself is based on a single slowing step, applying a radio…
We measure tunneling through a single quantum level in a carbon nanotube quantum dot connected to resistive metal leads. For the electrons tunneling to/from the nanotube, the leads serve as a dissipative environment, which suppresses the…
The resistivity as function of temperature of high temperature superconductors is very unusual and despite its importance lacks an unified theoretical explanation. It is linear with the temperature for overdoped compounds but it falls more…
We demonstrate the effect of single-electron tunneling (SET) through a carbon nanotube quantum dot on its nanomechanical motion. We find that the frequency response and the dissipation of the nanoelectromechanical system (NEMS) to SET…
One of the best known causes of dissipation in ac driven quantum systems stems from photon absorption. Dissipation can also be caused by the retarded response to the time-dependent excitation, and in general gives insight into the system's…
We study the dissipation in a system consisting of a small metallic island coupled to a gate electrode and to a massive reservoir via single tunneling junction. The dissipation of energy is caused by a slowly oscillating gate voltage. We…
It is shown that the noise-limited charge sensitivity of a single-electron transistor using superconductors (of either $SISIS$ or $NISIN$ type) operating near the threshold of quasiparticle tunneling, can be considerably higher than that of…
Starting from the Kubo formula for conductance, we calculate the frequency-dependent response of a single-electron transistor (SET) driven by an ac signal. Treating tunneling processes within the lowest order approximation, valid for a wide…
Radiation hardening of the MOSFET is of the highest priority for sustaining high-power systems in the space radiation environment. SiC-based power electronics are being looked at as a strong alternative for high power spaceborne power…
Pumping characteristics were studied of the hybrid normal-metal/superconductor single-electron transistor embedded in a high-ohmic environment. Two 3 micrometer-long microstrip resistors of CrOx with a sum resistance R=80kOhm were placed…
We trap a single cesium atom in a standing-wave optical dipole trap. Special experimental procedures, designed to work with single atoms, are used to measure the oscillation frequency and the atomic energy distribution in the dipole trap.…
Using a laser polarization gradient, we realize 3D Sisyphus cooling of $^{171}$Yb$^+$ ions confined in and near the Lamb-Dicke regime in a linear Paul trap. The cooling rate and final mean motional energy of a single ion are characterized…
We study a scheme for electrical detection of the spin resonance (ESR) of a single electron trapped near a Field Effect Transistor (FET) conduction channel. In this scheme, the resonant Rabi oscillations of the trapped electron spin cause a…
The non-equilibrium properties of a driven quasi-one dimensional superconducting ring subjected to a constant electromotive force ({\it emf}) is studied. The {\it emf} accelerates the superconducting electrons until the critical current is…
A small scale bipolar transistor with polysilicon emitter will, depending on the emitter window size, display suppression of the hole tramsport due to single electron effects. In this paper the resulting base current suppression is computed…
In order to respond to environmental signals, cells often use small molecular circuits to transmit information about their surroundings. Recently, motivated by concrete examples in signaling and gene regulation, a body of work has focused…