相关论文: Spin dynamics of electrons in the first excited su…

Spatiotemporal spin dynamics under spin-orbit interaction is investigated in a (001) GaAs two-dimensional electron gas using magneto-optical Kerr rotation microscopy. Spin polarized electrons are diffused away from the excited position,…

Doped ZnO is a promising material for spintronics applications. For such applications, it is important to understand the spin dynamics and particularly the spin coherence of this II-VI semiconductor. The spin lifetime $\tau_{s}$ has been…

The temperature dependence of electron spin resonance (ESR) was studied in $EuFe_{2-x}Co_{x}As_2 $ (x = 0.0, 0.067, 0.1, 0.2, 0.25, 0.285, 0.35, 0.4 and 0.5). The ESR spectrum of all the samples indicates that the g factor and peak-to-peak…

The phenomenon of low-temperature spin Coulomb drag in a two-dimensional electron gas is investigated. The spin transresistivity coefficient is essentially enhanced in the diffusive regime, as compared to conventional predictions. The…

Spin dynamics in low dimensional magnetic systems has been of fundamental importance for a long time and has currently received an impetus owing to the emerging field of nanoelectronics. Knowledge of the spin wave lifetimes, in particular,…

The temperature dependence of the electron spin life-time, T_1 and the g-factor are anomalous in alkali fullerides (K,Rb)_3C_60, which cannot be explained by the canonical Elliott-Yafet theory. These materials are archetypes of strongly…

We present a method of obtaining information about spin lifetimes in quantum dots from measurements of electrical transport. The dot is under resonant microwave irradiation and at temperatures comparable to or larger than the Zeeman energy.…

We report inelastic light scattering measurements of dispersive spin and charge density excitations in dilute 2D electron systems reaching densities less than 10^{10} cm^{-2}. In the quantum Hall state at nu=2, roton critical points in the…

We have measured the electron spin relaxation rate and the integrated spin noise power in n-doped GaAs for temperatures between 4 K and 80 K and for doping concentrations ranging from 2.7 x 10^{-15} cm^{-3} to 8.8 x 10^{-16} cm^{-3} using…

Direct electron spin resonance (ESR) on a high mobility two dimensional electron gas in a single AlAs quantum well reveals an electronic $g$-factor of 1.991 at 9.35 GHz and 1.989 at 34 GHz with a minimum linewidth of 7 Gauss. The ESR…

We use time-resolved Kerr rotation to demonstrate the optical and electronic tuning of both the electronic and local moment (Mn) spin dynamics in electrically gated parabolic quantum wells derived from II-VI diluted magnetic semiconductors.…

We report inelastic neutron scattering measurements of low energy ($\hbar \omega < 10$ meV) magnetic excitations in the "11" system Fe$_{1+y}$Te$_{1-x}$Se$_{x}$. The spin correlations are two-dimensional (2D) in the superconducting samples…

We study spin relaxation in n-type bulk GaAs, due to the Dyakonov--Perel mechanism, using ensemble Monte Carlo methods. Our results confirm that spin relaxation time increases with the electronic density in the regime of moderate electronic…

The coherent spin dynamics of electrons and holes are studied in a FA0.9Cs0.1PbI2.8Br0.2 perovskite bulk crystal, using time-resolved Kerr ellipticity in a two-color pump-probe scheme. The probe photon energy is tuned to the exciton…

Temperature and carrier density dependent spin dynamics for GaAs/AlGaAs quantum wells (QWs) with different structural symmetry has been studied by using time-resolved Kerr rotation technique. The spin relaxation time is measured to be much…

We use all-electrical methods to inject, transport, and detect spin-polarized electrons vertically through a 350-micron-thick undoped single-crystal silicon wafer. Spin precession measurements in a perpendicular magnetic field at different…

Carrier and spin recombination are investigated in p-type GaAs of acceptor concentration NA = 1.5 x 10^(17) cm^(-3) using time-resolved photoluminescence spectroscopy at 15 K. At low pho- tocarrier concentration, acceptors are mostly…

Low-temperature electron spin relaxation is studied by the optical orientation method in bulk n-GaAs with donor concentrations from 10^14 cm^{-3} to 5x10^17 cm^{-3}. A peculiarity related to the metal-to-insulator transition (MIT) is…

Time-resolved Kerr rotation measurements were performed in InGaAs/GaAs quantum wells nearby a doped Mn delta layer. Our magneto-optical results show a typical time evolution of the optically-oriented electron spin in the quantum well.…

A hybrid ferromagnet/semiconductor device is used to determine a lower bound on the spin lifetime for conduction electrons in silicon. We use spin precession to self-consistently measure the drift velocity vs. drift field of spin-polarized…