相关论文: Pt-induced nanowires on Ge(001): a DFT study

Two-dimensional hexagonal arrays of Pt nanoparticles (1.45 nm diameter) have been obtained by deposition of preformed and size selected Pt80 nanoparticles on graphene. This original self-organization is induced, at room temperature, by the…

Difference in nucleation of Ge quantum dots during Ge deposition at low (< 600C) and high (> 600C) temperatures on the Si(001) surface is studied by high resolution scanning tunneling microscopy. Two process resulting in appearance of…

Pt-Al and Pt-Y-Al thin film electrodes on yttria-stabilised zirconia electrolytes were prepared by dealloying of co-sputtered Pt-Al or Pt-Y-Al films. The selective dissolution of Al from the Pt-alloy compound causes the formation of a…

Renewed focus on the P-Si system due to its potential application in quantum computing and self-directed growth of molecular wires, has led us to study structural changes induced by P upon placement on Si(001)-$p(2\times 1)$. Using…

Germanium is an extremely important material used for numerous functional applications in many fields of nanotechnology. In this paper, we study the crystallization of amorphous Ge using atomistic simulations of critical nano-metric nuclei…

Metal nanowires and nanoparticles that facilitate surface plasmons are of contemporary interest in nanophotonics, thermoplasmonics and optoelectronics. They facilitate not only subwavelength light propagation and localization capabilities,…

Bimetallic nanoalloys such as nanoparticles and nanowires are attracting significant attention due to their vast potential applications such as in catalysis and nanoelectronics. Notably, Pd-Pt nanoparticles/nanowires are being widely…

A design concept for nanowire-based sensors and arrays is described. The fabrication technique involves electrodeposition to directly grow nanowires between patterned thin film contact electrodes. To prove our concept, we have…

Si/Ge heteroepitaxial dots under tensile strain are grown on nanostructured Ge substrates produced by high-temperature flash heating exploiting the spontaneous faceting of the Ge(001) surface close to the onset of surface melting. A very…

We investigated the electrical conductivity of platinum nanowires with heights ranging from 2 nm to 200 nm, deposited by focused electron beam induced deposition (FEBID). Post-deposition processing was employed to enhance the electrical…

The report studies transformation of a Ge granular film deposited at room temperature on the Si(001) surface to the Ge/Si(001) heterostructure as a result of rapid heating and annealing at 600C. As a result of the short-term annealing at…

Atomic and electronic structures of TiO_2(110) surface with possible adsorptional, substitutional and interstitial Au or Pt elemental impurities at full and one-sixth monolayer concentrations were investigated by density functional theory…

Entropy effects substantially modify the growth of self-assembled Ge nanostructures on vicinal Si (001) surfaces. As shown by variable temperature scanning tunneling microscopy, this leads to new types of one dimensional nanostructures that…

The recent discovery of excellent thermoelectric properties and topological surface states in SnTe-based compounds has attracted extensive attention in various research areas. Indium doped SnTe is of particular interest because, depending…

The article presents an experimental study of an issue of whether the formation of arrays of Ge quantum dots on the Si(001) surface is an equilibrium process or it is kinetically controlled. We deposited Ge on Si(001) at the room…

A number of different families of nanowires which self-assemble on semiconductor surfaces have been identified in recent years. They are particularly interesting from the standpoint of nanoelectronics, which seeks non-lithographic ways of…

Superconducting nanowires can be fabricated by decomposition of an organometallic gas using a focused beam of Ga ions. However, physical damage and unintentional doping often results from the exposure to the ion beam, motivating the search…

For the first time, we report the formation of pentagonal atomic chains during tensile deformation of ultra thin BCC Fe nanowires. Extensive molecular dynamics simulations have been performed on $<$100$>$/{110} BCC Fe nanowires with…

We report a direct STM observation of Ge hut array nucleation on the Si(001) surface during ultrahigh vacuum molecular-beam epitaxy at 360C. Nuclei of pyramids and wedges have been observed on the wetting layer MxN patches starting from the…

We have investigated the growth of Pt on Ge(110) using scanning tunneling microscopy and spectroscopy. The deposition of several monolayers of Pt on Ge(110) followed by annealing at 1100 K results in the formation of three-dimensional…