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相关论文: Dynamical properties of quasiparticles in a gapped…

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We theoretically calculate the impurity-scattering induced resistivity of twisted bilayer graphene at low twist angles where the graphene Fermi velocity is strongly suppressed. We consider, as a function of carrier density, twist angle, and…

介观与纳米尺度物理 · 物理学 2020-03-23 E. H. Hwang , S. Das Sarma

In this work we perform electron energy-loss spectroscopy (EELS) of freestanding graphene with high energy and momentum resolution to disentangle the quasielastic scattering from the excitation gap of Dirac electrons close to the optical…

The study of topological states in electronic structures, which allows robust transport properties against impurities and defects, has been recently extended to the realm of elasticity. This work shows that nontrivial topological flexural…

The exceptional electronic properties of monoatomic thin graphene sheets triggered numerous original transport concepts, pushing quantum physics into the realm of device technology for electronics, optoelectronics and thermoelectrics. At…

材料科学 · 物理学 2016-04-21 M. Vondracek , M. Kucera , L. Fekete , J. Kopecek , J. Lancok , D. Kalita , J. Coraux , V. Bouchiat , J. Honolka

We investigate charge and energy transport in monolayer graphene with smooth finite-range disorder, modeled by soft impurity potentials. Using a continuum Dirac model, we go beyond the Born approximation by computing the exact scattering…

介观与纳米尺度物理 · 物理学 2026-05-27 Juan A. Cañas , Daniel A. Bonilla , J. C. Pérez-Pedraza , A. Martín-Ruiz

Electronic properties of materials are commonly described by quasiparticles that behave as non-relativistic electrons with a finite mass and obey the Schroedinger equation. Here we report a condensed matter system where electron transport…

介观与纳米尺度物理 · 物理学 2011-05-05 K. S. Novoselov , A. K. Geim , S. V. Morozov , D. Jiang , M. I. Katsnelson , I. V. Grigorieva , S. V. Dubonos , A. A. Firsov

Charge carrier scattering is critical to the electrical properties of two-dimensional materials such as graphene, transition metal dichalcogenide monolayers, black phosphorene, and tellurene. Beyond pristine two-dimensional materials,…

介观与纳米尺度物理 · 物理学 2018-09-14 Dongchao Xu , Shuang Tang , Xu Du , Qing Hao

We performed molecular dynamics simulations to study equilibrium and flow properties of a liquid in a nano-channel with confining surfaces coated with a layer of grafted semiflexible polymers. The coverage spans a wide range of grafting…

计算物理 · 物理学 2015-09-30 Kevin Speyer , Claudio Pastorino

We outline a Kohn-Sham-Dirac density-functional-theory (DFT) scheme for graphene sheets that treats slowly-varying inhomogeneous external potentials and electron-electron interactions on an equal footing. The theory is able to account for…

强关联电子 · 物理学 2008-09-23 Marco Polini , Andrea Tomadin , Reza Asgari , A. H. MacDonald

We study the spectral function and quasiparticle scattering in Li-decorated graphene (Li@graphene) with an atomistic $T$-matrix formalism and uncover adatom-induced spectral effects which shed light on experimentally observed angle-resolved…

材料科学 · 物理学 2020-01-01 Kristen Kaasbjerg , Antti-Pekka Jauho

We study the effects of disorder in the electronic properties of graphene multilayers, with special focus on the bilayer and the infinite stack. At low energies and long wavelengths, the electronic self-energies and density of states…

强关联电子 · 物理学 2013-05-29 Johan Nilsson , A. H. Castro Neto , F. Guinea , N. M. R. Peres

We consider theoretically the electron--electron interaction induced exchange-correlation effects in the lowest subband of a quasi-one-dimensional GaAs quantum wire structures. We calculate, within the leading order dynamical screening…

凝聚态物理 · 物理学 2007-05-23 Ben Yu-Kuang Hu , S. Das Sarma

We calculate $\partial\mu/\partial n$ in extrinsic graphene as a function of carrier density $n$ at zero temperature by obtaining the electronic self-energy within the Hartree-Fock approximation. The exchange-driven Dirac-point logarithmic…

介观与纳米尺度物理 · 物理学 2007-12-03 E. H. Hwang , Ben Yu-Kuang Hu , S. Das Sarma

We study the scattering of graphene quasiparticles by topological defects, represented by holes, pentagons and heptagons. For the case of holes, we obtain the phase shift and found that at low concentration they appear to be irrelevant for…

强关联电子 · 物理学 2010-10-19 Jakson M. Fonseca , Winder A. Moura-Melo , Afranio R. Pereira

The low-energy (intraband) range of the third harmonic generation of graphene in the terahertz regime is governed by the damping terms induced by the interactions. A controlled many-body description of the scattering processes is thus a…

介观与纳米尺度物理 · 物理学 2021-03-24 Habib Rostami , Emmanuele Cappelluti

We study the supercritical instability in gapped graphene with two charged impurities separated by distance R using the two-dimensional Dirac equation for electron quasiparticles. Attention is paid to a situation when charges of impurities…

介观与纳米尺度物理 · 物理学 2013-12-04 E. V. Gorbar , V. P. Gusynin , O. O. Sobol

Nonlinear optical properties and carrier relaxation dynamics in graphene, suspended in three different solvents, are investigated using femtosecond (80 fs pulses) Z-scan and degenerate pumpprobe spectroscopy at 790 nm. The results…

材料科学 · 物理学 2015-05-14 Sunil Kumar , M. Anija , N. Kamaraju , K. S. Vasu , K. S. Subrahmanyam , A. K. Sood , C. N. R. Rao

We performed infrared transmission experiment on ion-gel gated graphene and measured carrier scattering rate g as function of carrier density n over wide range up to n=2E13 cm-2. The g exhibits a rapid decreases along with the gating…

介观与纳米尺度物理 · 物理学 2019-11-11 Kwangnam Yu , Jiwon Jeon , Jiho Kim , Chang Won Oh , Yongseok Yoon , Beom Joon Kim , Jeong Ho Cho , E. J. Choi

Harnessing the wave-nature of charge carriers in solid state devices, electron optics investigates and exploits coherent phenomena, in analogy with optics and photonics. Typically, this requires complex electronic devices leveraging…

Direct and inverse Auger scattering are amongst the primary processes that mediate the thermalization of hot carriers in semiconductors. These two processes involve the annihilation or generation of an electron-hole pair by exchanging…

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