相关论文: Robustness of Spin Polarization in Graphene-based …
The two-dimensional electron systems in graphene and in topological insulators are described by massless Dirac equations. Although the two systems have similar Hamiltonians, they are polar opposites in terms of spin-orbit coupling strength.…
Owing to their unprecedented electronic properties, graphene and two-dimensional (2D) crystals have brought fresh opportunities for advances in planar spintronic devices. Graphene is an ideal medium for spin transport while also being an…
Gapless surface states on topological insulators are protected from elastic scattering on non-magnetic impurities which makes them promising candidates for low-power electronic applications. However, for wide-spread applications, these…
Spintronics involves the development of low-dimensional electronic systems with potential use in quantum-based computation. In graphene, there has been significant progress in improving spin transport characteristics by encapsulation and…
The specific band structure of graphene, with its unique valley structure and Dirac neutrality point separating hole states from electron states has led to the observation of new electronic transport phenomena such as anomalously quantized…
An analysis of a novel magnetic field sensor based on a graphene spin capacitor is presented. The proposed device consists of graphene nanoribbons on top of an insulator material connected to a ferromagnetic source/drain. The time evolution…
We exploit the geometry of magnetic nanowires, which define 1D contacts to an encapsulated graphene channel, to introduce an out-of-plane component in the polarisation of spin carriers. By design, the magnetic nanowires traverse the angled…
Topological insulators provide a new platform for spintronics due to the spin texture of the surface states that are topologically robust against elastic backscattering. Here, we report on an investigation of the measured voltage obtained…
Graphene is a very promising material in spintronics due to both its high electric mobility and low intrinsic spin-obit coupling. Electronic spins can be injected from a ferromagnetic material through a tunnel contact into graphene owing to…
In recent years, new spin-dependent thermal effects have been discovered in ferromagnets, stimulating a growing interest in spin caloritronics, a field that exploits the interaction between spin and heat currents. Amongst the most…
The development of a spintronics device relies on efficient generation of spin polarized currents and their electric field controlled manipulation. While observation of exceptionally long spin relaxation lengths make graphene an intriguing…
Modern electronic devices utilize charge to transmit and store information. This leaves the information susceptible to external influences, such as radiation, that can introduce short timescale charge fluctuations and, long term, degrade…
Graphene-based materials show promise for spintronic applications due to their potentially large spin coherence length. On the other hand, because of their small intrinsic spin-orbit interaction, an external magnetic source is desirable in…
Within the field of spintronics major efforts are directed towards developing applications for spin-based transport devices made fully out of two-dimensional (2D) materials. In this work we present an experimental realization of a…
We propose a spintronic device to generate spin polarization in a mesoscopic region by purely electric means. We show that the spin Hall effect in combination with the stirring effect are sufficient to induce measurable spin polarization in…
Graphene has remarkable opportunities for spintronics due to its high mobility and long spin diffusion length, especially when encapsulated in hexagonal boron nitride (h-BN). Here, for the first time, we demonstrate gate-tunable spin…
We present a theoretical study on the spin-dependent transport through a spin valve consisting of graphene sandwiched between two magnetic leads with an arbitrary orientation of the lead magnetization. No gate voltage is applied. Using…
We characterize the spin injection into bilayer graphene fully encapsulated in hBN using trilayer (3L) hexagonal boron nitride (hBN) tunnel barriers. As a function of the DC bias, the differential spin injection polarization is found to…
We study the magnetoresistance of spin-valve devices using graphene as a non-magnetic material to connect ferromagnetic leads. As a preliminary step we first study the conductivity of a graphene strip connected to metallic contacts for a…
A major challenge of spintronics is in generating, controlling and detecting spin-polarized current. Manipulation of spin-polarized current, in particular, is difficult. We demonstrate here, based on calculated transport properties of…