相关论文: Transfer Characteristics in Graphene Field-Effect …

Graphene field-effect transistors with source/drain contacts made of metals that can be easily oxidized such as ferromagnetic metals often display a double dip structure in the transfer characteristics because of charge density depinning at…

An anomalous distortion is often observed in the transfer characteristics of graphene field-effect transistors. We fabricate graphene transistors with ferromagnetic metal electrodes, which reproducibly display distorted transfer…

We discuss the origin of an additional dip other than the charge neutrality point observed in transfer characteristics of graphene-based field-effect transistors. The double-dip is proved to arise from charge transfer between graphene and…

The extremely high carrier mobility and the unique band structure, make graphene very useful for field-effect transistor applications. According to several works, the primary limitation to graphene based transistor performance is not…

We fabricated a large number of single and bilayer graphene transistors and carried out a systematic experimental study of their low-frequency noise characteristics. A special attention was given to determining the dominant noise sources in…

Graphene field effect transistors commonly comprise graphene flakes lying on SiO2 surfaces. The gate-voltage dependent conductance shows hysteresis depending on the gate sweeping rate/range. It is shown here that the transistors exhibit two…

Transport measurements normally provide a macroscopic, averaged view of the sample, so that disorder prevents the observation of fragile interaction induced states. Here, we demonstrate that transconductance fluctuations in a graphene field…

We study the effect of extended charge defects in electronic transport properties of graphene. Extended defects are ubiquitous in chemically and epitaxially grown graphene samples due to internal strains associated with the lattice…

We study the contact resistance and the transfer characteristics of back-gated field effect transistors of mono- and bi-layer graphene. We measure specific contact resistivity of ~7kohm*um2 and ~30kohm*um2 for Ni and Ti, respectively. We…

In this work we test graphene electrodes in nano-metric channel n-type Organic Field EffectTransistors (OFETs) based on thermally evaporated thin films of perylene-3,4,9,10-tetracarboxylic acid diimide derivative (PDIF-CN2). By a thorough…

Conventional field effect transistor operation in graphene is limited by its zero gap and minimum quantum conductivity. In this work, we report on controlled electrochemical modification of graphene such that its conductance changes by more…

A novel nanoelectronic device is constructed by graphyne that is robustly connected between graphene electrodes, where graphyne is composed of hexagonal carbon rings and carbon chains. Owing to similarities between the bond lengths and unit…

A stochastic nonlinear electrical characteristic of graphene is reported. Abrupt current changes are observed from voltage sweeps between the source and drain with an on/off ratio up to 10^(3). It is found that graphene channel experience…

Based on explicit solution of current continuity equation in the graphene FET's channel the semi-classical diffusion-drift description of the carrier transport and I-V characteristics model has been developed. Role of rechargeable defects…

Graphene, due to its unique electronic structure favoring high carrier mobility, is considered a promising material for use in high-speed electronic devices in the post-silicon electronic era. For this reason, experimental research on…

In a heterostructure of graphene and the ferromagnetic insulator EuO, the Eu atoms induce proximity exchange and inter-valley interactions in the graphene layer. Constrained by the lattice symmetries, and guided by ab initio calculations, a…

We use first-principles calculations to uncover and explain a new type of anomalous low-velocity stopping effect in proton-irradiated graphene. We attribute a shoulder feature that occurs exclusively for channeling protons to enhanced…

We study the effects of low-energy electron beam irradiation up to 10 keV on graphene based field effect transistors. We fabricate metallic bilayer electrodes to contact mono- and bi-layer graphene flakes on SiO$_2$, obtaining specific…

Observations of electron-hole asymmetry in transport through graphene devices at high magnetic field challenge prevalent models of the graphene quantum Hall effect. Here, we study this asymmetry both in conventional magnetotransport and in…

The effect of electron-electron interaction on the low-temperature conductivity of graphene is investigated experimentally. Unlike in other two-dimensional systems, the electron-electron interaction correction in graphene is sensitive to…