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相关论文: Spin polarization control through resonant states …

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We study spin-dependent transport in a two-dimensional electron gas subject to an external step-like potential $V(x)$ and irradiated by an electromagnetic field (EF). In the absence of EF the electronic spectrum splits into spin sub-bands…

介观与纳米尺度物理 · 物理学 2009-11-13 M. V. Fistul , K. B. Efetov

We demonstrate microwave manipulation of the spin states of electrically injected spin-polarized electrons in silicon. Although the silicon channel is bounded by ferromagnetic metal films, we show that moderate microwave power can be…

介观与纳米尺度物理 · 物理学 2013-12-16 C. C. Lo , J. Li , I. Appelbaum , J. J. L. Morton

We study ballistic transport through semiconductor quantum point contact systems under different confinement geometries and applied fields. In particular, we investigate how the {\em lateral} spin-orbit coupling, introduced by asymmetric…

介观与纳米尺度物理 · 物理学 2015-05-13 Anh T. Ngo , P. Debray , Sergio Ulloa

We study the temperature flow of conductivities in a gated GaAs two-dimensional electron gas (2DEG) containing self-assembled InAs dots and compare the results with recent theoretical predictions. By changing the gate voltage, we are able…

We evaluate the charge and longitudinal spin response functions of a two-dimensional electron gas with $e^2/r$ interactions in an arbitrary state of spin polarization, using a structurally self-consistent approach to treat exchange and…

强关联电子 · 物理学 2015-06-24 B. Davoudi , M. P. Tosi

Topological insulators are candidates to open up a novel route in spin based electronics. Different to traditional ferromagnetic materials, where the carrier spin-polarization and magnetization are based on the exchange interaction, the…

Detail transport properties of graphene/MoS2/metal vertical heterostructure have been investigated. The van der Waals interface between the graphene and MoS2 exhibits Schottky barrier. The application of gate voltage to the graphene layer…

介观与纳米尺度物理 · 物理学 2015-03-10 Yohta Sata , Rai Moriya , Takehiro Yamaguchi , Yoshihisa Inoue , Sei Morikawa , Naoto Yabuki , Satoru Masubuchi , Tomoki Machida

We demonstrate efficient spin-polarized tunneling between a ferromagnetic metal and a ferromagnetic semiconductor with highly mismatched conductivities. This is indicated by a large tunneling magnetoresistance (up to 30%) at low…

材料科学 · 物理学 2009-11-07 S. H. Chun , S. J. Potashnik , K. C. Ku , P. Schiffer , N. Samarth

We have studied the magnetoresistance (TMR) of tunnel junctions with electrodes of La2/3Sr1/3MnO3 and we show how the variation of the conductance and TMR with the bias voltage can be exploited to obtain a precise information on the spin…

材料科学 · 物理学 2016-08-16 M. Bowen , A. Barthélémy , M. Bibes , E. Jacquet , J. -P. Contour , A. Fert , F. Ciccacci , L. Dùo , R. Bertacco

The polarization of conduction electron spins due to an electrical current is observed in strained nonmagnetic semiconductors using static and time-resolved Faraday rotation. The density, lifetime, and orientation rate of the…

介观与纳米尺度物理 · 物理学 2007-05-23 Y. Kato , R. C. Myers , A. C. Gossard , D. D. Awschalom

Recently, the chiral-induced spin selectivity in molecular systems has attracted extensive interest among the scientific communities. Here, we investigate the effect of the gate voltage on spin-selective electron transport through the…

介观与纳米尺度物理 · 物理学 2015-09-16 Ting-Rui Pan , Ai-Min Guo , Qing-Feng Sun

We study the bias-dependent spin-transfer torque in magnetic tunnel junctions in the Stoner model by scattering theory. We show that the in-plane (Slonczewski type) torque vanishes and subsequently reverses its direction when the bias…

材料科学 · 物理学 2009-11-13 Jiang Xiao , Gerrit E. W. Bauer , Arne Brataas

We explore electrically injected, spin polarized transport in a ballistic two-dimensional electron gas. We augment the Buettiker-Landauer picture with a simple, but realistic model for spin-selective contacts to describe multimode…

介观与纳米尺度物理 · 物理学 2009-10-31 H. X. Tang , F. G. Monzon , Ron Lifshitz , M. C. Cross , M. L. Roukes

We characterize spin-polarized lasing in a two-dimensional photonic lattice fabricated from a GaAs/InGaAs semiconductor microcavity sample. The lattice is defined by a staggered arrangement of rounded rectangular micrometric mesas that…

Electronic processes in a semiconductor system consisting of some Resonant Tunnelling Structures, built in the depletion region of a Schottky barrier, are investigated. It is shown that the Schottky barrier can block or unblock the resonant…

介观与纳米尺度物理 · 物理学 2009-05-14 D. I. Sheka , O. V. Tretyak , A. M. Korol , A. K. Sen , A. Mookerjee

We demonstrate the electrical injection and detection of spin-polarized electrons in the Co2FeSi/GaAs hybrid system using lateral transport structures. Spin valve signatures and characteristic Hanle curves are observed both in the nonlocal…

介观与纳米尺度物理 · 物理学 2015-06-15 Pawel Bruski , Yori Manzke , Rouin Farshchi , Oliver Brandt , Jens Herfort , Manfred Ramsteiner

A comparison is made between the degree of spin polarization of electrons excited by one- and two-photon absorption of circularly polarized light in bulk zincblende semiconductors. Time- and polarization-resolved experiments in…

其他凝聚态物理 · 物理学 2007-05-23 R. D. R. Bhat , P. Nemec , Y. Kerachian , H. M. van Driel , J. E. Sipe , Arthur L. Smirl

Spin-selective spatial filtering of propagating polariton condensates, using a controllable spin-dependent gating barrier, in a one-dimensional semiconductor microcavity ridge waveguide is reported. A nonresonant laser beam provides the…

介观与纳米尺度物理 · 物理学 2015-07-10 T. Gao , C. Antón , T. C. H. Liew , M. D. Martín , Z. Hatzopoulos , L. Viña , P. S. Eldridge , P. G. Savvidis

Current generated spin polarization in topological insulator (TI) surface states due to spin-momentum locking has been detected recently using ferromagnet/tunnel barrier contacts, where the projection of the TI spin onto the magnetization…

介观与纳米尺度物理 · 物理学 2019-04-19 Connie H. Li , Olaf M. J. van t Erve , Chenhui Yan , Lian Li , Berry T. Jonker

Spin-polarized field-effect transistor (spin-FET), where a dielectric layer is generally employed for the electrical gating as the traditional FET, stands out as a seminal spintronic device under the miniaturization trend of electronics. It…

材料科学 · 物理学 2017-03-07 Fan Li , Cheng Song , Bin Cui , Jingjing Peng , Youdi Gu , Guangyue Wang , Feng Pan