相关论文: Gate-induced interlayer asymmetry in ABA-stacked t…

The chiral lattice structure of twisted bilayer graphene with D6 symmetry allows for intrinsic photogalvanic effects only at off-normal incidence, while additional extrinsic effects are known to be induced by a substrate or a gate…

We have studied the dielectric screening of electric field which is induced by a gate voltage in twisted double bilayer graphene by using a sample with a mismatch angle of about 5 degrees. In low temperature magnetotransport measurements,…

We review the electronic properties of bilayer graphene, beginning with a description of the tight-binding model of bilayer graphene and the derivation of the effective Hamiltonian describing massive chiral quasiparticles in two parabolic…

Gated trilayer graphene exhibits energy gap in its most stable ABC stacking. Here we show that when the stacking order changes from ABC to CBA, three gapless states appear in each valley. The states are topologically protected and their…

We calculate the dynamical polarization function and solve a self-consistent gap equation in the random phase approximation in undoped ABC-stacked n-layer graphene. We find that the gap is maximal in trilayer graphene and decreases…

We consider bilayer graphene in the presence of spin orbit coupling, to assess its behavior as a topological insulator. The first Chern number $n$ for the energy bands of single and bilayer graphene is computed and compared. It is shown…

The emergence of alternating twist multilayer graphene (ATMG) as a generalization of twisted bilayer graphene (TBG) raises the question - in what important ways do these systems differ? Here, we utilize ab-initio relaxation and…

The band structure of Bernal-stacked bilayer graphene can be tuned using double-gated transistors to apply a perpendicular electric field that generates an interlayer potential energy difference $\Delta$. Dielectric breakdown limits the…

We theoretically study the effects of electron-electron interaction in twisted bilayer graphene in applied transverse dc electric field. When the twist angle is not very small, the electronic spectrum of the bilayer consists of four Dirac…

The absence of an energy gap separating valence and conduction bands makes the low-energy electronic properties of graphene and its multi-layers sensitive to electron-electron interactions. In bilayers, for instance, interactions are…

The band structure and the optical conductivity of an ABA (Bernal-type) stacked graphene trilayer are calculated. It is shown that, under appropriate doping, a strong resonant peak develops in the optical conductivity, located at the…

Recent experiments [L. Ju et al., Nature, 2015, 520, 650] confirm the existence of gapless states at domain walls created in gated bilayer graphene, when the sublattice stacking is changed from AB to BA. These states are significant because…

We systematically investigate the nonlinear photogalvanic effect in few-layer graphene with various stacking orders, including AA- and AB-stacked bilayers, and AAA-, ABA-, and ABC-stacked trilayers. Using a tight-binding model to describe…

We propose use of disorder to produce a field effect transistor (FET) in biased bilayer and trilayer graphene. Modulation of the bias voltage can produce large variations in the conductance when the disorder's effects are confined to only…

Quantum geometry of electronic wavefunctions results in fascinating topological phenomena. A prominent example is the intrinsic anomalous Hall effect (AHE) in which a Hall voltage arises in the absence of an applied magnetic field. The AHE…

Boundaries between structural twins of bilayer graphene (so-called AB/BA domain walls) are often discussed in terms of the formation of topologically protected valley-polarised chiral states. Here, we show that, depending on the width of…

Anomalous gating effects-such as gate ineffectiveness and pronounced hysteresis-have been observed in graphene-based systems encapsulated in boron nitride (BN) and linked to a possible ferroelectric state. However, their origin, stability,…

We study the electronic structure of gated graphene sheets. We consider both infinite graphene and finite width ribbons. The effect of Coulomb interactions between the electrically injected carriers and the coupling to the external gate are…

Berry phase is one of the key elements to understand quantum-mechanical phenomena such as the Aharonov-Bohm effect and the unconventional Hall effect in graphene. The Berry phase in monolayer and bilayer graphene has been manifested by the…

We present a theoretical study on the electron transmission through the AB-BA stacking boundary in multilayer graphene. Using the tight-binding model and the transfer matrix method, we calculate the electron transmission probability through…