相关论文: Enhanced tunneling magnetoresistance in Fe$\mid$Zn…

We theoretically investigated a method to detect a single skyrmion in a magnetic tunneling junction (MTJ) geometry. Using the tunneling Hamiltonian approach, we calculated the tunneling magnetoresistance (TMR) ratio of the…

We investigate the impact of edge roughness on the electrical transport properties of magnetic tunnel junctions using non-equilibrium Greens function formalism. We have modeled edge roughness as a stochastic variation in the cross-sectional…

The optimal Co concentration in Fe$_{1-x}$Co$_{x}$/MgO magnetic tunnel junctions (MTJs) that maximizes tunneling magnetoresistance (TMR) is still under investigation. We perform a first-principles transport study on MTJs using disordered…

GaMnAs-based magnetic tunnel junction (MTJ) devices are characterized by in-plane and perpendicular-toplane magnetotransport at low temperatures. Perpendicular-to-plane transport reveals the typical tunneling magnetotransport (TMR) signal.…

Magnetoelectric properties of the spin-valve-type tunnel junction of Ta(5\ nm)/Ni$_{79}$Fe$_{21}$ (25 nm)/Ir$_{22}$Mn$_{78}$ (10 nm)/Co$_{75}$Fe$_{25}$ (4 nm)/Al (0.8 nm)-oxide/Co$_{75}$Fe$_{25}$ (4 nm)/Ni$_{79}$Fe$_{21}$ (20 nm)/Ta (5 nm)…

We propose energy band engineering to enhance tunneling electroresistance (TER) in ferroelectric tunnel junctions (FTJs). We predict that an ultrathin dielectric layer with a smaller band gap, embedded into a ferroelectric barrier layer,…

Atomic intercalation offers a powerful route for engineering two-dimensional (2D) materials by precisely tuning interlayer electronic coupling and spin configurations. Here, we propose a generic strategy for the construction of fully 2D…

We report an extensive first-principles investigation of impurity-induced device-to-device variability of spin-polarized quantum tunneling through Fe/MgO/Fe magnetic tunnel junctions (MTJ). In particular, we calculated the tunnel…

By imposing the constraints of structural compatibility, stability and a large tunneling magneto-resistance, we have identified the Fe$_3$Al/BiF$_3$/Fe$_3$Al stack as a possible alternative to the well-established FeCoB/MgO/FeCoB in the…

Antiferromagnetic spintronics offers the potential for higher-frequency operations and improved insensitivity to magnetic fields compared to ferromagnetic spintronics. However, previous electrical techniques to detect antiferromagnetic…

Recently, magnetic tunnel junctions with perpendicular magnetized electrodes combined with exchange bias films have attracted large interest. In this paper we examine the tunnel magnetoresistance of…

We study transport through a ferromagnetic single-electron transistor. The resistance is represented as a path integral, so that systems where the tunnel resistances are smaller than the quantum resistance can be investigated. Beyond the…

We study tunnel junctions consisting of a two-dimensional ferroelectric (FE) material sandwiched between graphene electrodes. We formulate a theory for the interplay of the FE polarization and induced free charges in such devices, taking…

We theoretically investigate quantum transport through single-molecule magnet (SMM) junctions with ferromagnetic and normal-metal leads in the sequential regime. The current obtained by means of the rate-equation gives rise to the tunneling…

Magnetic tunnel junctions with the layer sequence Co$_2$Cr$_{0.6}$Fe$_{0.4}$Al/MgO/CoFe were fabricated by magnetron sputtering at room temperature (RT). The samples exhibit a large inverse tunneling magnetoresistance (TMR) effect of up to…

We investigate the dependence of perpendicular and parallel spin transfer torque (STT) and tunneling magnetoresistance (TMR) on the insulator barrier energy in the magnetic tunnel junction (MTJ). We employed single orbit tight binding model…

Complex oxide systems have attracted considerable attention because of their fascinating properties, including the magnetic ordering at the conducting interface between two band insulators, such as LaAlO3 (LAO) and SrTiO3 (STO). However,…

Using a simple quantum-mechanical model, we explore a tunneling anisotropic magnetoresistance (TAMR) effect in ferroelectric tunnel junctions (FTJs) with a ferromagnetic electrode and a ferroelectric barrier layer, which spontaneous…

We calculate the conductance of quasi-one-dimensional nanowires with electronic states confined to a surface charge layer, in the presence of a uniform magnetic field. Two-terminal magnetoconductance (MC) between two leads deposited on the…

We theoretically investigate magnetoresistance (MR) effects in connection with spin filtering in quantum-coherent transport through tunnel junctions based on non-magnetic/semimagnetic heterostructures. We find that spin filtering in…