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Recent theory and experiment have suggested that space-charge-limited transport should be prevalent in high aspect-ratio semiconducting nanowires. We report on InAs nanowires exhibiting this mode of transport and utilize the underlying…

We studied electric current and noise in planar GaN nanowires (NWs). The results obtained at low voltages provide us with estimates of the depletion effects in the NWs. For larger voltages, we observed the space-charge limited current…

介观与纳米尺度物理 · 物理学 2017-01-17 V. A. Sydoruk , S. A. Vitusevich , H. Hardtdegen , M. V. Petrychuk , A. V. Naumov , V. V. Korotyeyev , V. A. Kochelap , A. E. Belyaev

Electronic processes in a semiconductor system consisting of some Resonant Tunnelling Structures, built in the depletion region of a Schottky barrier, are investigated. It is shown that the Schottky barrier can block or unblock the resonant…

介观与纳米尺度物理 · 物理学 2009-05-14 D. I. Sheka , O. V. Tretyak , A. M. Korol , A. K. Sen , A. Mookerjee

The miniaturization of integrated circuits is facing an obstruction due to the escalating electrical resistivity of conventional copper interconnects. The underlying reason for this problem was unveiled by Fuchs and Sondheimer, who showed…

介观与纳米尺度物理 · 物理学 2024-12-03 Robin Durand , Louis-Thomas Gendron , Théo Nathaniel Dionne , Ion Garate

In this paper, the Ni Schottky barrier on GaN epilayer grown on free standing substrates has been characterized. First, transmission electrical microscopy (TEM) images and nanoscale electrical analysis by conductive atomic force microscopy…

The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without dopant segregation is investigated. The electrical characteristics are very well modeled by thermionic-field emission for non-segregated…

The space-charge-limited current in a zero thickness planar thin film depends on the geometry of the electrodes. We present a theory which is to a large extent analytical and applicable to many different lay-outs. We show that a…

经典物理 · 物理学 2016-09-28 Patrick De Visschere

Electronic properties of metal-finite semiconducting carbon nanotube interfaces are studied as a function of the nanotube length using a self-consistent tight-binding theory. We find that the shape of the potential barrier depends on the…

介观与纳米尺度物理 · 物理学 2009-11-10 Yongqiang Xue , Mark A. Ratner

We investigate electronic properties of heterojunctions between metallic and semiconducting single-wall carbon nanotubes. Ineffective screening of the long range Coulomb interaction in one-dimensional nanotube systems drastically modifies…

介观与纳米尺度物理 · 物理学 2009-10-31 Arkadi A. Odintsov

The voltage-carrying state of superconducting NbTiN nanowires, used for single-photon detectors, is analyzed. Upon lowering the current, the wire returns to the superconducting state in a steplike pattern, which differs from sample to…

超导电性 · 物理学 2013-02-05 H. L. Hortensius , E. F. C. Driessen , T. M. Klapwijk

Using low-resistance electrical contacts, we have measured the intrinsic high-field transport properties of metallic single-wall carbon nanotubes. Individual nanotubes appear to be able to carry currents with a density exceeding 10^9…

介观与纳米尺度物理 · 物理学 2009-10-31 Zhen Yao , Charles L. Kane , Cees Dekker

Nonlinear electron transport in normally pinched-off quantum wires was studied. The wires were fabricated from AlGaAs/GaAs heterostructures with high-mobility two-dimensional electron gas by electron beam lithography and following wet…

The theory of charge and spin transport in forward-biased Schottky barriers reveals characteristic and experimentally relevant features. The conductance mismatch is found to enhance the current induced spin-imbalance in the semiconductor.…

介观与纳米尺度物理 · 物理学 2009-11-11 Gerrit E. W. Bauer , Yaroslav Tserkovnyak , Arne Brataas , Jun Ren , Ke Xia , Maciej Zwierzycki , Paul J. Kelly

Rapid electron transport in the quantum well triggers many novel physical phenomena and becomes a critical point for the high-speed electronics. Here, we found electrical properties of the titanium oxide changed from semiconducting to…

应用物理 · 物理学 2022-11-03 Runze Li , Faguang Yan , Yongcheng Deng , Yu Sheng

An attempt to determine theoretically the highly non-linear current-voltage (I-V) characteristics of polycrystalline semiconductors, such as ZnO-based varistors, is made from the electrical properties of individual grain boundaries under dc…

凝聚态物理 · 物理学 2009-10-22 E. Canessa , V. L. Nguyen

We probe the electron transport properties in the shell of GaAs/In0.2Ga0.8As core/shell nanowires at high electric fields using optical pump / THz probe spectroscopy with broadband THz pulses and peak electric fields up to 0.6 MV/cm. The…

介观与纳米尺度物理 · 物理学 2020-06-24 Rakesh Rana , Leila Balaghi , Ivan Fotev , Harald Schneider , Manfred Helm , Emmanouil Dimakis , Alexej Pashkin

Sufficiently large electric current applied to metallic nanostructures can bring them far out-of-equilibrium, resulting in non-Ohmic behaviors characterized by current-dependent resistance. We experimentally demonstrate a linear dependence…

介观与纳米尺度物理 · 物理学 2020-03-25 Guanxiong Chen , Ryan Freeman , Andrei Zholud , Sergei Urazhdin

Non-crystalline thin-film Schottky diodes are cost-effective but often exhibit unreliable electrical characteristics due to material imperfections. In this work, I present a Schottky diode structure utilizing in-situ grown Ta2O5 and ZnO…

材料科学 · 物理学 2025-04-02 Jihun Lim

The transport properties of a tunnel barrier in a one-dimensional wire are investigated at finite voltages and temperatures. We generalize the Luttinger model to account for finite ranges of the interaction. This leads to deviations from…

介观与纳米尺度物理 · 物理学 2009-10-30 Margit Steiner , Wolfgang Häusler

One-dimensional electronic fluids are peculiar conducting systems, where the fundamental role of interactions leads to exotic, emergent phenomena, such as spin-charge (spinon-holon) separation. The distinct low-energy properties of these 1D…

介观与纳米尺度物理 · 物理学 2016-09-16 M. Moreno , C. J. B. Ford , Y. Jin , J. P. Griffiths , I. Farrer , G. A. C. Jones , D. A. Ritchie , O. Tsyplyatyev , A. J. Schofield
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