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We study the interplay between electron correlation and disorder in the two-dimensional Hubbard model at half-filling by means of a variational wave function that can interpolate between Anderson and Mott insulators. We give a detailed…

强关联电子 · 物理学 2015-05-13 Maria Elisabetta Pezzoli , Federico Becca

In the presence of quenched disorder, the interplay between local magnetic-moment formation and Anderson localization for electrons at a zero-temperature, metal-insulator transition (MIT) remains a long unresolved problem. Here, we study…

无序系统与神经网络 · 物理学 2024-10-17 Xinghai Zhang , Matthew S. Foster

It is shown that the Anderson-Mott metal-insulator transition of paramagnetic, interacting disordered electrons in an external magnetic field is in the same universality class as the transition from a ferromagnetic metal to a ferromagnetic…

统计力学 · 物理学 2009-10-31 D. Belitz , T. R. Kirkpatrick

Local magnetic moments in disordered sytems can be described in terms of annealed magnetic disorder, in addition to the underlying quenched disorder. It is shown that for noninteracting electron systems at zero temperature, the annealed…

统计力学 · 物理学 2009-10-31 D. Belitz , T. R. Kirkpatrick , Thomas Vojta

The metal-insulator transition in correlated electron systems, where electron states transform from itinerant to localized, has been one of the central themes of condensed matter physics for more than half a century. The persistence of this…

Two-dimensional topological insulators are characterized by an insulating bulk and conductive edge states protected by the nontrivial topology of the bulk electronic structure. They remain robust against moderate disorder until Anderson…

介观与纳米尺度物理 · 物理学 2025-07-11 Roberta Favata , Nicolas Baù , Antimo Marrazzo

Strong correlation effects, which are often associated to the approach to a Mott insulating state, in some cases may be observed even far from half-filling. This typically happens whenever the inter-site Coulomb repulsion induces a tendency…

Elucidating the physics of the single-orbital Hubbard model in its intermediate coupling regime is a key missing ingredient to our understanding of metal-insulator transitions in real materials. Using recent non-perturbative many-body…

强关联电子 · 物理学 2024-10-10 Maria Chatzieleftheriou , Silke Biermann , Evgeny A. Stepanov

It is well established that for non-interacting electrons, increasing disorder drives a metal into a gapless localized Anderson insulator. While in three dimensions a threshold in disorder must be crossed for the transition, in two…

强关联电子 · 物理学 2015-06-15 Elias Lahoud , O. Nganba Meetei , K. B. Chaska , A Kanigel , Nandini Trivedi

In this overview we provide a general introduction to metal-insulator transitions, with focus on specific mechanisms that can localize the electrons in absence of magnetic or charge ordering, and produce well defined quantum critical…

强关联电子 · 物理学 2011-12-30 V. Dobrosavljevic

The competition between the Mott transition and the Anderson localization in one dimensional electron systems is studied based upon the bosonization and the renormalization group method. The beta function is calculated up to the second…

凝聚态物理 · 物理学 2009-10-28 Satoshi Fujimoto , Norio Kawakami

Using a three-frequency one-dimensional kicked rotor experimentally realized with a cold atomic gas, we study the transport properties at the critical point of the metal-insulator Anderson transition. We accurately measure the…

无序系统与神经网络 · 物理学 2012-04-16 Gabriel Lemarié , Hans Lignier , Dominique Delande , Pascal Szriftgiser , Jean Claude Garreau

The checkerboard lattice, with alternating 'crossed' plaquettes, serves as the two dimensional analog of the pyrochlore lattice. The corner sharing plaquette structure leads to a hugely degenerate ground state, and no magnetic order, for…

强关联电子 · 物理学 2017-01-24 Nyayabanta Swain , Pinaki Majumdar

We study the magnetoresistance of two-dimensional bosonic Anderson insulators. We describe the change in spatial decay of localized excitations in response to a magnetic field, which is given by an interference sum over alternative…

无序系统与神经网络 · 物理学 2015-06-11 Anirban Gangopadhyay , Victor Galitski , Markus Mueller

Recent experiments on the amorphous magnetic semiconductor Gd_x Si_{1-x}, Phys. Rev. Lett. 77, 4652 (1996), ibid 83, 2266 (1999), ibid 84, 5411 (2000), ibid 85, 848 (2000), have revealed an insulator-metal transition (i-m-t), as a function…

强关联电子 · 物理学 2009-11-07 Sanjeev Kumar , Pinaki Majumdar

The two dimensional Hubbard model in the presence of diagonal and off-diagonal disorder is studied at half filling with a finite temperature quantum Monte Carlo method. Magnetic correlations as well as the electronic compressibility are…

凝聚态物理 · 物理学 2009-10-28 Martin Ulmke , Richard T. Scalettar

We investigate the metal-insulator Mott transition in a generalized version of the periodic Anderson model, in which a band of itinerant electrons is hybridrized with a narrow and strongly correlated band. Using dynamical mean-field theory,…

强关联电子 · 物理学 2017-07-18 Adriano Amaricci , Luca de' Medici , Massimo Capone

Magnetic moments strongly coupled to the spins of conduction electrons in a nanostructure can confine the conduction-electron motion due to scattering at almost localized Kondo singlets. We study the resulting local-moment formation in the…

强关联电子 · 物理学 2013-09-26 Andrej Schwabe , Irakli Titvinidze , Michael Potthoff

The interplay between Mott and Anderson routes to localization in disordered interacting systems gives rise to different transitions and transport regimes. Here, we investigate the phase diagram at finite temperatures using dynamical mean…

强关联电子 · 物理学 2015-09-25 Helena Braganca , M. C. O. Aguiar , J. Vucicevic , D. Tanaskovic , V. Dobrosavljevic

The Mott-Hubbard transition is studied in the context of the two-dimensional Hubbard model. Analytical calculations show the existence of a critical value Uc of the potential strength which separates a paramagnetic metallic phase from a…

强关联电子 · 物理学 2007-05-23 F. Mancini
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