相关论文: Spin-dependent scattering in a silicon transistor

The Photon Drag Effect (PDE) is a nonlinear process akin to optical rectification in which the momentum of light is transferred to charged carriers and converted to a DC voltage. Here, we experimentally demonstrate the spin-polarized…

Donor spin states in silicon are a promising candidate for quantum information processing. One possible donor spin readout mechanism is the bound exciton transition that can be excited optically and creates an electrical signal when it…

The theory of spin orientation of two-dimensional (2D) electron gas has been developed for intrasubband indirect optical transitions. The monopolar optical orientation of electrons in the conduction band is caused by the indirect scattering…

The Electron-Ion Collider in China (EicC) is pivotal in enhancing our knowledge of the internal structure of nucleons and nuclei, particularly through the study of transverse momentum-dependent parton distributions (TMDs). Among the…

In multiferroic oxides with a transverse helical magnetic order, the magnetization exchange coupling is sinusoidally space-dependent. We theoretically investigate the spin-dependent electron grating effect in…

We theoretically propose a novel spin-dependent electronic transport mechanism in which the spin-unpolarized electron beam is split into different directions depending on spins at an atomic domain boundary in non-magnetic material.…

A theory of spin-dependent electron transmission through resonant tunneling diode (RTD) grown of non-centrosymmetrical semiconductor compounds has been presented. It has been shown that RTD can be employed for injection and detection of…

The impacts of both exchange interaction and electron correlation, as well as their combined impact, on electron elastic scattering off a semifilled shell Mn(...$3d^{5}$$4s^{2}$, $^{6}S$) atom are theoretically studied in the electron…

A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system (2DES) is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance…

A theory of scattering by charged dislocation lines in a two-dimensional electron gas (2DEG) is developed. The theory is directed towards understanding transport in AlGaN/GaN high-electron-mobility transistors (HEMT), which have a large…

The transport property of a lateral two-dimensional diluted magnetic semiconductor electron gas under a spatially periodic magnetic field is investigated theoretically. We find that the electron Fermi velocity along the modulation direction…

Whilst it has long been known that disorder profoundly affects transport properties, recent measurements on a series of solid solution 3d-transition metal alloys reveal two orders of magnitude variations in the residual resistivity. Using…

We analyze new spin effects in current-carrying state of superconductor-2D electron gas-superconductor (S-2DEG-S) device with spin-polarized nuclei in 2DEG region. The hyperfine interaction of 2D electrons with nuclear spins, described by…

We consider electronic current transport through a ballistic one-dimensional quantum wire connected to two ferromagnetic leads. We study the effects of the spin-dependence of interfacial phase shifts (SDIPS) acquired by electrons upon…

The spin structure function of the neutron is traditionally determined by measuring the spin asymmetry of inclusive electron deep inelastic scattering (DIS) off polarized3He nuclei. In such experiments, nuclear effects can lead to large…

The creation of artificial gauge fields in neutral ultracold atom systems has opened the possibility to study the effects of spin-orbit coupling terms in clean environments. This work considers the multi-channel scattering properties of two…

We theoretically investigate electron spin injection and spin-polarization sensitive current detection at Schottky contacts between a ferromagnetic metal and an n-type or p-type semiconductor. We use spin-dependent continuity equations and…

The resistivities of the dilute, strongly-interacting 2D electron systems in the insulating phase of a silicon MOSFET are the same for unpolarized electrons in the absence of magnetic field and for electrons that are fully spin polarized by…

Spin-flip scattering of charge carriers in metals with magnetic defects leads to the low-temperature saturation of the decoherence time, $\tau_\varphi$, of electrons at the value comparable to their spin relaxation time, $\tau_s$. In…

We propose a method to electrically control electron spins in donor-based qubits in silicon. By taking advantage of the hyperfine coupling difference between a single-donor and a two-donor quantum dot, spin rotation can be driven by…