Dislocation scattering in a two-dimensional electron gas
材料科学
2009-10-31 v1
摘要
A theory of scattering by charged dislocation lines in a two-dimensional electron gas (2DEG) is developed. The theory is directed towards understanding transport in AlGaN/GaN high-electron-mobility transistors (HEMT), which have a large number of line dislocations piercing through the 2DEG. The scattering time due to dislocations is derived for a 2DEG in closed form. This work identifies dislocation scattering as a mobility-limiting scattering mechanism in 2DEGs with high dislocation densities. The insensitivity of the 2DEG (as compared to bulk) to dislocation scattering is explained by the theory.
引用
@article{arxiv.cond-mat/0003199,
title = {Dislocation scattering in a two-dimensional electron gas},
author = {Debdeep Jena and Arthur. C. Gossard and Umesh K. Mishra},
journal= {arXiv preprint arXiv:cond-mat/0003199},
year = {2009}
}
备注
6 pages, 3 figures