相关论文: Effects of current on nanoscale ring-shaped magnet…

We show that the interplay between charging effects and the non-equilibrium spin accumulation has a dramatic effect in the current through an array of nanostructures attached to ferromagnetic electrodes. Large oscillations in the current as…

The dc transport properties of the (S/M)I(M/S) tunnel structure - proximity coupled superconductor (S) and magnetic (M) layers separated by an insulator (I) - in a parallel magnetic field have been investigated. We choose for the M metal…

We investigate switching of magnetic tunnel junctions (MTJs) driven by the thermal effect of the transport current through the junctions. The switching occurs in a specially designed composite free layer, which acts as one of the MTJ…

A model of a spin valve in which electron transport between the magnetized electrodes is due to multistep tunneling is analyzed. Motivated by recent experiments on organic spin valves, we assume that spin memory loss in the course of…

We theoretically study the transport properties of a supramolecular spin valve, consisting of a carbon nanotube with two attached magnetic molecules, weakly coupled to metallic contacts. The emphasis is put on analyzing the change of the…

Energy-efficient switching of magnetization is a central problem in nonvolatile magnetic storage and magnetic neuromorphic computing. In the past two decades, several efficient methods of magnetic switching were demonstrated including spin…

Magnetic tunnel junctions (MTJs) are basic building blocks for devices such as magnetic random access memories (MRAMs). The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of MTJs…

Two-level fluctuations of the magnetization state of pseudo spin-valve pillars Co(10 nm)/Cu(10 nm)/Co(30 nm) embedded in electrodeposited nanowires (~40 nm in diameter, 6000 nm in length) are triggered by spin-polarized currents of 10^7…

The effect of resonant tunneling on magnetoresistance (MR) is studied theoretically in a double junction system. We have found that the ratio of the MR of the resonant peak current is reduced more than that of the single junction, whereas…

Spin Currents in Tunnel Junctions for example induced by thermoelectric forces due to temperature and magnetization gradients etc. are analyzed. Using Onsager theory yields directly, in particular for magnetic tunnel junctions, metallic…

GaMnAs-based magnetic tunnel junction (MTJ) devices are characterized by in-plane and perpendicular-toplane magnetotransport at low temperatures. Perpendicular-to-plane transport reveals the typical tunneling magnetotransport (TMR) signal.…

The torque generated by the transfer of spin angular momentum from a spin-polarized current to a nanoscale ferromagnet can switch the orientation of the nanomagnet much more efficiently than a current-generated magnetic field, and is…

The influence of a spin-polarized current on long ferromagnetic nanostripes is studied numerically. The current flows perpendicularly to the stripe. The study is based on the Landau-Lifshitz phenomenological equation with the…

We measure the temperature, magnetic-field, and current dependence for the switching of nanomagnets by a spin-polarized current. Depending on current bias, switching can occur between either two static magnetic states or a static state and…

The main objective of this work is to investigate theoretically how tilting of an easy axis of a single-molecule magnet (SMM) from the orientation collinear with magnetic moments of the leads affects the switching process induced by current…

We study spin and charge currents pumped by precessing magnetization of a single ferromagnetic layer within F|I|N or F|I|F (F-ferromagnet; I-insulator; N-normal-metal) multilayers of nanoscale thickness attached to two normal metal…

The quantum tunneling of the magnetization vector between excited levels are studied theoretically in single-domain ferromagnetic nanoparticles with biaxial crystal symmetry placed in an external magnetic field at an arbitarily directed…

Nb and its compounds are widely used in quantum computing due to their high superconducting transition temperatures and high critical fields. Devices that combine superconducting performance and spintronic non-volatility could deliver…

Strain-controlled modulation of the magnetic switching behavior in magnetic tunnel junctions (MTJs) could provide the energy efficiency needed to accelerate the use of MTJs in memory, logic, and neuromorphic computing, as well as an…

A theoretical formula is derived for the threshold current to switch a perpendicular magnetization in a ferromagnet by the spin Hall effect. The numerical simulation of the Landau-Lifshitz-Gilbert equation indicates that magnetization…