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Switching of the direction of the magnetic moment in a nanomagnet is studied within a modified Slonczewski's model that permits torsional oscillations of the magnet. We show that the latter may inhibit or assist the magnetization switching,…

介观与纳米尺度物理 · 物理学 2014-03-03 Liufei Cai , Reem Jaafar , Eugene M. Chudnovsky

The dynamics of a single spin embedded in a the tunnel junction between ferromagnetic contacts is strongly affected by the exchange coupling to the tunneling electrons. Moment reversal of the local spin induced by the bias voltage across…

介观与纳米尺度物理 · 物理学 2008-06-04 J. Fransson

Characteristic results of magnetism in small particles and thin films are presented. As a consequence of the reduced atomic coordination in small clusters and thin films the electronic states and density of states modify. Thus magnetic…

介观与纳米尺度物理 · 物理学 2015-05-14 K. H. Bennemann

We present spin transfer switching results for MgO based magnetic tunneling junctions (MTJs)with large tunneling magnetoresistance (TMR) ratio of up to 150% and low intrinsic switching current density of 2-3 x 10 MA/cm2. The switching data…

其他凝聚态物理 · 物理学 2009-11-11 Zhitao Diao , Dmytro Apalkov , Mahendra Pakala , Alex Panchula , Yiming Huai

In this work, we study magnetization switching induced by spin-orbit torque in W(Pt)/Co/NiO heterostructures with variable thickness of heavy-metal layers W and Pt, perpendicularly magnetized Co layer and an antiferromagnetic NiO layer.…

In magnetic nanostructures one usually uses a magnetic field to commute between two resistance (R) states. A less common but technologically more interesting alternative to achieve R-switching is to use an electrical current, preferably of…

材料科学 · 物理学 2009-11-11 J. Ventura , J. P. Araujo , J. B. Sousa , Y. Liu , Z. Zhang , P. P. Freitas

We study the charge and spin currents passing through a magnetic tunnel junction (MTJ) on the basis of a tight-binding model. The currents are evaluated perturbatively with respect to the tunnel Hamiltonian. The charge current has the form…

介观与纳米尺度物理 · 物理学 2012-06-11 Daisuke Miura , Akimasa Sakuma

The tunnel current and magnetoresistance (TMR) are investigated in magnetic tunnel junctions consisting of a spin-filter tunnel barrier, sandwiched between a ferromagnetic (FM) electrode and a nonmagnetic (NM) electrode. The investigations…

介观与纳米尺度物理 · 物理学 2009-11-10 Alireza Saffarzadeh

We study in-plane magnetic tunnel junctions with additional perpendicular polarizer for subnanosecond-current-induced switching memories. The spin-transfer-torque switching dynamics was studied as a function of the cell aspect ratio both…

We study current-driven magnetization switching in nanofabricated magnetic trilayers, varying the magnetoresistance in three different ways. First, we insert a strongly spin-scattering layer between the magnetic trilayer and one of the…

材料科学 · 物理学 2009-11-10 S. Urazhdin , Norman O. Birge , W. P. Pratt , J. Bass

We investigate the dependence of switching current density on the junction sizes in the spin transfer torque nanopillar structures by using micromagnetic simulations. While the macro spin model predicts weak dependence of switching current…

材料科学 · 物理学 2015-06-12 Chun-Yeol You , Myung-Hwa Jung

Magnetization behavior of long nanowires with square cross-section under influence of strong perpendicular spin-polarized current is studied theoretically. The study is based on Landau-Lifshitz-Slonczewski phenomenology. In the no current…

介观与纳米尺度物理 · 物理学 2013-06-12 Volodymyr P. Kravchuk , Oleksii M. Volkov , Denis D. Sheka , Yuri Gaididei

In a nanomagnet (whose total spin S< 1000), very small polarized currents can lead to magnetic reversal. Treating on the same footing the transport and magnetic properties of a nanomagnet connected to magnetic leads via tunneling barriers,…

介观与纳米尺度物理 · 物理学 2009-11-10 X. Waintal , O. Parcollet

Magnetic tunnel junctions (MTJs) with Hf0.5Zr0.5O2 barriers are reported to show both tunneling magnetoresistance effect (TMR) and tunneling electroresistance effect (TER), displaying four resistance states by magnetic and electric field…

We observe spin-valve-like effects in nano-scaled thermally evaporated Co/AlOx/Au tunnel junctions. The tunneling magnetoresistance is anisotropic and depends on the relative orientation of the magnetization direction of the Co electrode…

科普物理 · 物理学 2015-05-13 R. S. Liu , L. Michalak , C. M. Canali , L. Samuelson , H. Pettersson

Memristive devices whose resistance can be hysteretically switched by electric field or current are intensely pursued both for fundamental interest as well as potential applications in neuromorphic computing and phase-change memory. When…

Interplay between magnetization dynamics and electric current in a conducting ferromagnet is theoretically studied based on a microscopic model calculation. First, the effects of the current on magnetization dynamics (spin torques) are…

介观与纳米尺度物理 · 物理学 2017-08-23 H. Kohno , S. Kawabata , T. Noguchi , S. Ueta , J. Shibata , G. Tatara

We investigate the stochastic dynamics of nanoscale perpendicular magnetic tunnel junctions (pMTJs) and the correlations that arise when they are electrically coupled. Individual junctions exhibit thermally activated spin-transfer torque…

介观与纳米尺度物理 · 物理学 2026-02-04 Dairong Chen , Ahmed Sidi El Valli , Jonathan Z. Sun , Flaviano Morone , Dries Sels , Andrew D. Kent

Nanoscale multifunctional perpendicular organic spin valves have been fabricated. The devices based on an La$_{0.7}$Sr$_{0.3}$MnO$_3$/Alq$_3$/Co trilayer show resistive switching of up to 4-5 orders of magnitude and magnetoresistance as…

介观与纳米尺度物理 · 物理学 2016-10-27 Robert Göckeritz , Nico Homonnay , Alexander Müller , Bodo Fuhrmann , Georg Schmidt

The influence of insertion of an ultra-thin NiO layer between the MgO barrier and ferromagnetic electrode in magnetic tunnel junctions has been investigated by measuring the tunneling magnetoresistance and the X-ray magnetic circular…