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It has been predicted that application of a strong electric field perpendicular to the plane of bilayer graphene can induce a significant band gap. We have measured the optical conductivity of bilayer graphene with an efficient electrolyte…

介观与纳米尺度物理 · 物理学 2015-05-13 Kin Fai Mak , Chun Hung Lui , Jie Shan , Tony F. Heinz

The mobility of graphene is very high because the quantum Hall effects can be observed even at room temperature. Graphene has the potential of the material for novel devices because of this high mobility. But the energy gap of graphene is…

介观与纳米尺度物理 · 物理学 2010-12-14 Tatsuo Suzuki , Yushi Yokomizo

Despite the now vast body of two-dimensional materials under study, bilayer graphene remains unique in two ways: it hosts a simultaneously tunable band gap and electron density; and stems from simple fabrication methods. These two…

介观与纳米尺度物理 · 物理学 2016-07-19 M. K. Brinkley , D. S. L. Abergel , B. D. Clader

We calculate thermopower of clean and impure bilayer graphene systems. Opening a band gap through the application of an external electric field is shown to greatly enhance the thermopower of bilayer graphene, which is more than four times…

材料科学 · 物理学 2015-05-18 Lei Hao , T. K. Lee

Using the first principles calculations, we show that mechanically tunable electronic energy gap is realizable in bilayer graphene if different homogeneous strains are applied to the two layers. It is shown that the size of energy gap can…

介观与纳米尺度物理 · 物理学 2010-09-13 Seon-Myeong Choi , Seung-Hoon Jhi , Young-Woo Son

We demonstrate that the electronic gap of a graphene bilayer can be controlled externally by applying a gate bias. From the magneto-transport data (Shubnikov-de Haas measurements of the cyclotron mass), and using a tight binding model, we…

The adsorption of an alkali-metal submonolayer on graphene occupying every third hexagon of the honeycomb lattice in a commensurate $(\sqrt{3}\times\sqrt{3})R30^\circ$ arrangement induces an energy gap in the spectrum of graphene. To…

材料科学 · 物理学 2009-01-27 M. Farjam , H. Rafii-Tabar

The origin of the low current on/off ratio at room temperature in dual-gated bilayer graphene field-effect transistors is considered to be the variable range hopping in gap states. However, the quantitative estimation of gap states has not…

材料科学 · 物理学 2015-11-18 Kaoru Kanayama , Kosuke Nagashio

The potential of graphene-based materials consisting of one or a few layers of graphite for integrated electronics originates from the large room-temperature carrier mobility in these systems (approx. 10,000 cm2/Vs). However, the…

介观与纳米尺度物理 · 物理学 2007-12-04 Jeroen B. Oostinga , Hubert B. Heersche , Xinglan Liu , Alberto F. Morpurgo , Lieven M. K. Vandersypen

Opening, in a controllable way, the energy gap in the electronic spectrum of graphene is necessary for many potential applications, including an efficient carbon-based transistor. We have shown that this can be achieved by chemical…

材料科学 · 物理学 2008-09-05 D. W. Boukhvalov , M. I. Katsnelson

We study the gate voltage induced gap that occurs in graphene bilayers using \textit{ab initio} density functional theory. Our calculations confirm the qualitative picture suggested by phenomenological tight-binding and continuum models. We…

材料科学 · 物理学 2007-05-23 Hongki Min , B. R. Sahu , Sanjay K. Banerjee , A. H. MacDonald

The electronic structure and optical response of electrically gated bilayer graphene are studied by first-principles approaches. We have obtained the induced band gap that is in good agreement with experiment when the applied electric field…

介观与纳米尺度物理 · 物理学 2015-03-13 Li Yang

For graphene to be used in semiconductor applications, a wide energy gap of at least 0.5 eV at the Dirac energy must be opened without the introduction of atomic defects. However, such a wide energy gap has not been realized in graphene,…

An energy gap can be opened in the electronic spectrum of graphene by lifting its sublattice symmetry. In bilayers, it is possible to open gaps as large as 0.2 eV. However, these gaps rarely lead to a highly insulating state expected for…

We demonstrate that AA-stacked bilayer graphene (AA-BLG) encapsulated by dielectric materials can possess an energy gap due to the induced mass term. Using the four-band continuum model, we evaluate transmission and reflection probabilities…

介观与纳米尺度物理 · 物理学 2019-06-17 Hasan M. Abdullah , Mohammed Al Ezzi , H. Bahlouli

Bilayer graphene -- two coupled single graphene layers stacked as in graphite -- provides the only known semiconductor with a gap that can be tuned externally through electric field effect. Here we use a tight binding approach to study how…

介观与纳米尺度物理 · 物理学 2010-04-29 Eduardo V. Castro , N. M. R. Peres , J. M. B. Lopes dos Santos , F. Guinea , A. H. Castro Neto

At large commensurate angles, twisted bilayer graphene which holds even parity under sublattice exchange exhibits a tiny gap. Here, we point out a way to tune this tiny gap into a large gap. We start from comprehensive understanding of the…

介观与纳米尺度物理 · 物理学 2024-03-22 Xiu-Cai Jiang , Yi-Yuan Zhao , Yu-Zhong Zhang

The discovery of electric field induced bandgap opening in bilayer graphene opens new door for making semiconducting graphene without aggressive size scaling or using expensive substrates. However, bilayer graphene samples have been limited…

材料科学 · 物理学 2010-11-19 Seunghyun Lee , Kyunghoon Lee , Zhaohui Zhong

We demonstrate that single layer graphene exhibits the electronic structure of a bilayer when it is connected to two gated bilayers. The energy gap characteristic for gated bilayer is induced in the single layer and it persists for…

介观与纳米尺度物理 · 物理学 2019-07-31 Wlodzimierz Jaskolski

This is a theoretical study of electron transport in gated bilayer graphene - a novel semiconducting material with a tunable band gap. It is shown that the which-layer pseudospin coherence enhances the subgap conductivity and facilitates…

介观与纳米尺度物理 · 物理学 2012-05-28 Maxim Trushin
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