相关论文: Comment on: Quantum interference of tunnel traject…
A current can be induced in a closed device by changing control parameters. The amount $Q$ of particles that are transported via a path of motion, is characterized by its expectation value $<Q>$, and by its variance $Var(Q)$. We show that…
The quantum-mechanical transmission through a disordered tunnel barrier is investigated analytically in the following regime: (correlation range of the random potential) << (penetration length) << (barrier length). The mean and/or the width…
We report on theoretical investigations of carrier scattering asymmetry at ferromagnet-semiconductor junctions. By an analytical $2\times 2$ spin model, we show that, when Dresselhaus interactions is included in the conduction band of III-V…
A three barrier resonant tunneling structure in which the two quantum wells are formed by a dilute magnetic semiconductor material (ZnMnSe) with a giant Zeeman splitting of the conduction band is theoretically investigated. Self-consistent…
Theoretical treatments of tunneling in electronic devices are often based on one-dimensional (1D) approximations. Here we show that for many nanoscale devices, such as widely studied semiconductor gate-defined quantum dots, 1D…
Forbidden transitions between energy levels typically involve violation of selection rules imposed by symmetry and/or conservation laws. A nanomagnet tunneling between up and down states violates angular momentum conservation because of…
We present a methodology based on quantum mechanics for assigning quantum conductivity when an ac field is applied across a variable gap between two plasmonic nanoparticles with an insulator sandwiched between them. The quantum tunneling…
Quantum tunneling of the magnetization is a major obstacle to the use of single-molecule magnets (SMMs) as basic constituents of next-generation storage devices. In this context, phonons are often only considered (perturbatively) as…
A clear consensus on how long it takes a particle to tunnel through a potential barrier has never been so urgently required, since the electron dynamics in strong-field ionization can be resolved on attosecond time-scale in experiment and…
Quantum annealing leverages quantum tunneling for non-local searches, thereby minimizing memory effects that typically arise from metastabilities. Nonetheless, recent work has demonstrated robust hysteresis in large-scale transverse-field…
The electromagnetic characteristics of bilayer quantum Hall systems in the presence of interlayer coherence and tunneling are studied by means of a pseudospin-texture effective theory and an algebraic framework of the single-mode…
The effects of the spin-orbit interaction on the tunneling magnetoresistance of ferromagnet/semiconductor/normal metal tunnel junctions are investigated. Analytical expressions for the tunneling anisotropic magnetoresistance (TAMR) are…
A formula suitable for a quantitative evaluation of the tunneling effect in a ferromagnetic particle is derived with the help of the instanton method. The tunneling between n-th degenerate states of neighboring wells is dominated by a…
The conductance and tunnel magneto-resistance (TMR) of the double barrier magnetic tunnel junction with spin-valve sandwich (F/P/F) inserted between two insulating barrier, are theoretically investigated. It is shown, that resonant…
The detailed theoretical understanding of quantum spin dynamics in various molecular magnets is an important step on the roadway to technological applications of these systems. Quantum effects in both ferromagnetic and antiferromagnetic…
Quantum tunneling from a thin wire or a thin film through a static potential barrier in a zero magnetic field is studied. The wire or the film should satisfy a condition of transverse quantization of levels and be inhomogeneous. Depending…
In present work we study informational measures for the problem of interference of quantum particles. We demonstrate that diffraction picture in the far field, which is given by probability density of particle momentum distribution,…
We study the effects of interference on the quenching dynamics of a one-dimensional spin 1/2 $XY$ model in the presence of a transverse field ($h(t)$) which varies sinusoidally with time as $h = h_0\cos{\omega t}$, with $|t| \leq t_f =…
Using the tight-binding model and the generalized Green's function formalism, the effect of quantum interference on the electron transport through the benzene molecule in a semiconductor/benzene/semiconductor junction is numerically…
Destructive quantum interference in molecular junctions might be used to build molecular quantum rulers, allowing to quantify changes in external control parameters electrically. For this reason, it is important to understand which patterns…