相关论文: 1/f noise near the free surface of a semiconductor
Solid-state systems which mimic two-level atoms are being actively developed. Improving the quantum coherence of these systems, for instance spin qubits or single photon emitters using semiconductor quantum dots, involves dealing with…
In this paper it is demonstrated that a 1/f power spectrum appears in the process originated by the superposition of many similar single-sided RTN processes with the same relaxation time. The non-relaxed regime, the Gaussian nature and the…
We investigate a problem of the necessary and sufficient conditions for appearance of the 1/f fluctuations in the simple systems affected by the external random perturbations, i.e. the power spectral density of the flux of particles moving…
We present a new method to measure 1/f noise in Josephson quantum bits (qubits) that yields low-frequency spectra below 1Hz. Comparison of noise taken at positive and negative bias of a phase qubit shows the dominant noise source to be flux…
An approach to the problem of 1/f voltage noise observed in all conducting media is developed based on an uncertainty relation for the Fourier-transformed signal. It is shown that the quantum indeterminacy caused by non-commutativity of…
It has been found that periodically closely spaced vacancies on a graphite sheet cause a significant rearrange-ment of its electronic spectrum: metallic waveguides with a high density of states near the Fermi level are formed along the…
We propose a model of $1/f$ noise in semiconductors based on the drift of individual charge carriers and their interaction with the trapping centers. We assume that the trapping centers are homogeneously distributed in the material. The…
We show that the spectral fluctuations of the Two-Body Random Ensemble (TBRE) exhibit 1/f noise. This result supports a recent conjecture stating that chaotic quantum systems are characterized by 1/f noise in their energy level…
We present a microscopic theory of the low-frequency voltage noise (known as "1/f" noise) in micrometer-thick films of hydrogenated amorphous silicon. This theory traces the noise back to the long-range fluctuations of the Coulomb potential…
The nature of the low-frequency current fluctuations, i.e. carrier number vs. mobility, defines the strategies for noise reduction in electronic devices. While the 1/f noise in metals has been attributed to the electron mobility…
1/f noise is a critical figure of merit for the performance of transistors and circuits. For two-dimensional devices (2D-FETs), and especially for applications in the GHz range where short-channel FETs are required, velocity saturation (VS)…
For semimetal nanowires with diameters smaller than a few tens of nanometers, a semimetal-to-semiconductor transition is observed as the emergence of an energy band gap resulting from quantum confinement. Quantum confinement in a semimetal…
We study dephasing in semiconductor-superconductor structures caused by coupling to a voltage probe. We consider structures where the semiconductor consists of two scattering regions between which partial dephasing is possible. As a…
This letter investigates low frequency 1/ f noise in hBN encapsulated graphene device in a dual gated geometry. The noise study is performed as a function of top gate carrier density (nT G) at different back gate densities (nBG). The noise…
Single quantum dots and other materials exhibit irregular switching between on and off states; these on-off states follow power-law statistics giving rise to 1/f noise. We transfer this phenomenon (also referred to as on-off intermittency)…
For many implementations of quantum computing, 1/f and other types of broad-spectrum noise are an important source of decoherence. An important step forward would be the ability to back out the characteristics of this noise from qubit…
Based on analyzing various physical examples for 1/f noise we found that the 1/f noise is caused by generating conditions as resonance in acoustics and the effect of matter carrier is secondary. All the physical reasons are summarized into…
Noise of stochastic processes whose power spectrum scales at low frequencies, $f$, as $1/f$ appears in such diverse systems that it is considered universal. However, there have been a small number of instances from completely unrelated…
An oscillatory magnetic field dependence of the DC voltage is observed when a low-frequency current flows through superconducting Sn-Ge thin-film composites near the percolation threshold. The paper also studies the experimental…
The power spectrum of quantum dot fluorescence exhibits $1/f^\beta$ noise, related to the intermittency of these nanosystems. As in other systems exhibiting $1/f$ noise, this power spectrum is not integrable at low frequencies, which…